In various embodiments, single-crystal aluminum nitride boules and substrates having high transparency to ultraviolet light and low defect density are formed. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.

The present invention provides a novel surface-modified inorganic substance obtained by modifying the surface of an inorganic nitride or an inorganic oxide with a boronic acid compound, and a heat dissipation material, a thermally conductive material, and a lubricant which use the surface-modified inorganic substance. The present invention also provides a method for manufacturing the surface-modified inorganic substance, and provides, as a novel method for modifying the surface of an inorganic substance selected from an inorganic oxide and an inorganic nitride with an organic substance, a method for modifying the surface of an inorganic nitride or an inorganic oxide with an organic substance that includes making a contact between the inorganic nitride or the inorganic oxide with a boronic acid compound.

The present invention provides a novel surface-modified inorganic substance obtained by modifying the surface of an inorganic nitride or an inorganic oxide with a boronic acid compound, and a heat dissipation material, a thermally conductive material, and a lubricant which use the surface-modified inorganic substance. The present invention also provides a method for manufacturing the surface-modified inorganic substance, and provides, as a novel method for modifying the surface of an inorganic substance selected from an inorganic oxide and an inorganic nitride with an organic substance, a method for modifying the surface of an inorganic nitride or an inorganic oxide with an organic substance that includes making a contact between the inorganic nitride or the inorganic oxide with a boronic acid compound.

A method of making Aluminum Nitride (AlN) from nut shells comprising preparing powders of agricultural nuts, preparing powders of nanocrystalline Al.sub.2O.sub.3, mixing the powders and thereby forming a homogenous sample powder of agricultural nuts and Al.sub.2O.sub.3, pressurizing the homogenous sample powder into a disk, heat treating or pyrolyzing the disk in a nitrogen atmosphere, reacting the disk and the nitrogen atmosphere and forming AlN, and wherein the AlN is nano-structured AlN and in a pure form and in the wurtzite phase of AlN. A method of producing Aluminum Nitride comprising milling nuts into a powder, milling a powder of nanocrystalline Al.sub.2O.sub.3, mixing, pressing into a pellet, providing nitrogen, heating, and forming AlN. An Aluminum Nitride product from preparing powders of nuts and Al.sub.2O.sub.3, mixing, and forming a powder, pressurizing into a disk, pyrolyzing in nitrogen, and forming AlN.

In various embodiments, controlled heating and/or cooling conditions are utilized during the fabrication of aluminum nitride single crystals and aluminum nitride bulk polycrystalline ceramics. Thermal treatments may also be utilized to control properties of aluminum nitride crystals after fabrication.

An electrophotographic component includes a substrate and an optional cushioning layer disposed on the substrate. The optional cushioning layer comprises a material selected from the group consisting of silicones, fluorosilicones and fluoroelastomers. An optional release layer is disposed on the substrate and if present, on the optional cushioning layer. The optional release layer comprises a fluoropolymer. The substrate, the optional cushioning layer, the optional release layer, or any combination thereof, comprise a plurality of fluorinated boron nitride nanosheets. The electrophotographic component comprises at least one layer selected from the optional cushioning layer and the optional release layer.

An electrophotographic component includes a substrate and an optional cushioning layer disposed on the substrate. The optional cushioning layer comprises a material selected from the group consisting of silicones, fluorosilicones and fluoroelastomers. An optional release layer is disposed on the substrate and if present, on the optional cushioning layer. The optional release layer comprises a fluoropolymer. The substrate, the optional cushioning layer, the optional release layer, or any combination thereof, comprise a plurality of fluorinated boron nitride nanosheets. The electrophotographic component comprises at least one layer selected from the optional cushioning layer and the optional release layer.

A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

A piezoelectric material is described. The piezoelectric material comprises aluminum nitride (AlN) doped with ytterbium (Yb), an atomic percentage of Yb in the AlN being greater than or equal to approximately 10.0% and less than or equal to approximately 27.0%. Piezoelectric layers comprising the piezoelectric material may be used in bulk acoustic wave (BAW) acoustic resonators, and surface acoustic wave (SAW) acoustic resonators. The BAW acoustic resonators and SAW acoustic resonators can be used in a variety of applications.

A microwave heating apparatus according to the present disclosure includes a housing, a drum unit disposed rotatably on the housing and into which heating target substance and gas are introduced, and at least one heating unit heating the drum unit by applying microwaves to the drum unit. With a microwave heating apparatus and a method for manufacturing an aluminum nitride using the same of the present disclosure, an aluminum nitride may be manufactured at a lower temperature than that of conventional methods, thereby reducing manufacturing time. Additionally, a microwave heating apparatus according to the present disclosure may significantly reduce power consumption compared to an electric heating apparatus.