A phosphor plate including a base material, and a plate-shaped composite including phosphors dispersed in the base material, in which a main component of the base material is alumina, the phosphor includes an α-type sialon phosphor, and L* value satisfies 73.5 or more and 85.0 or less, a* value satisfies 4.4 or more and 8.0 or less, and b* value satisfies 10.8 or more and 13.0 or less in L*a*b* color coordinates of the phosphor plate in a case of being measured in accordance with JIS Z 8781-4.

A filler composition is excellent in heat dissipation. A silicone resin composition includes the filler composition. A heat dissipation element is made by molding the silicone resin composition. More specifically, the filler composition has a filler (A1) having an average particle diameter of 0.3-1.0 μm, a filler (A2) having an average particle diameter of 3-15 μm, and a filler (A3) having an average particle diameter of 35-140 μm, wherein the filler (A1), the filler (A2) and the filler (A3) are one or more kinds selected from alumina, magnesia, AlN covered alumina, AlN and SN.

Described herein are antipathogenic compositions comprising a nitride chosen from aluminum nitride, boron nitride, chromium nitride, cerium nitride, hafnium nitride, lanthanum nitride, phosphorous nitride, sulfur nitride, tantalum nitride, titanium nitride, vanadium nitride, yttrium nitride, zirconium nitride, silicon nitride, or combinations thereof, and methods of using said compositions to inactivate viruses, bacteria, and/or fungi.

In various embodiments, single-crystal aluminum nitride boules and substrates are formed from the vapor phase with controlled levels of impurities such as carbon. Single-crystal aluminum nitride may be heat treated via quasi-isothermal annealing and controlled cooling to improve its ultraviolet absorption coefficient and/or Urbach energy.

An object is to provide a piezoelectric body having a value indicating a higher performance index (d.sub.33, e.sub.33, C.sub.33, g.sub.33, and/or k.sup.2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al.sub.1-X-YMg.sub.XM.sub.YN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

A system for chemical transformation of 3D state materials is disclosed wherein, a reaction group having a main body arranged to shape a reaction chamber in which a component configured to support a sample of 3D state arranged to be chemically transform is expected. The system further includes an oven arranged to heat the reaction chamber and a GAS supply group arranged to release a first gas in the reaction chamber and/or a casing component, inside the main body, which has a chemical agent suitable for releasing a second gas into the reaction chamber. The main body has at least two turbines arranged to converge into the reaction chamber, the first and/or the second gas on the samples. The invention relates also to a method for chemical transformation of 3D state materials.

A system for chemical transformation of 3D state materials is disclosed wherein, a reaction group having a main body arranged to shape a reaction chamber in which a component configured to support a sample of 3D state arranged to be chemically transform is expected. The system further includes an oven arranged to heat the reaction chamber and a GAS supply group arranged to release a first gas in the reaction chamber and/or a casing component, inside the main body, which has a chemical agent suitable for releasing a second gas into the reaction chamber. The main body has at least two turbines arranged to converge into the reaction chamber, the first and/or the second gas on the samples. The invention relates also to a method for chemical transformation of 3D state materials.

Aluminum nitride particles used as a material of an aluminum nitride sintered compact are disclosed. The aluminum nitride particles may have a same crystal orientation. The aluminum nitride particles each have an aspect ratio of 3 or more, a plate-like shape, a planar length of 0.6 μm or more and 20 μm or less, and a thickness length of 0.05 μm or more and 2 μm or less.

Aluminum nitride particles used as a material of an aluminum nitride sintered compact are disclosed. The aluminum nitride particles may have a same crystal orientation. The aluminum nitride particles each have an aspect ratio of 3 or more, a plate-like shape, a planar length of 0.6 μm or more and 20 μm or less, and a thickness length of 0.05 μm or more and 2 μm or less.

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.