Patent classifications
C01B21/076
ACTIVE MATERIAL AND FLUORIDE ION BATTERY
A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.X in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05x3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1y3, and z satisfies 0.15z6.
ACTIVE MATERIAL AND FLUORIDE ION BATTERY
A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.X in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05x3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1y3, and z satisfies 0.15z6.
BLACK-FILM-FORMING MIXED POWDER AND PRODUCTION METHOD THEREFOR
Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.
BLACK-FILM-FORMING MIXED POWDER AND PRODUCTION METHOD THEREFOR
Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.
Ceramic wafer and the manufacturing method thereof
A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.
METHOD AND SYSTEM FOR LOW TEMPERATURE ALD
A method and chemical delivery system are provided for low temperature atomic layer deposition. Thus, methods of forming nitrogen-containing thin films by atomic layer deposition using a substantially water free hydrazine gas and plasma treatment are provided.
CERAMIC POWDER AND BORON NITRIDE SINTERED MATERIAL
A ceramic powder containing at least one of a nitride and a carbonitride of a metal element as a major component, the metal element being one or more elements selected from the group consisting of a group 4 element, a group 5 element and a group 6 element, the ceramic powder having particles having an average particle size of 5 m or less, and an oxygen content of 0.3% by mass or less.
CERAMIC POWDER AND BORON NITRIDE SINTERED MATERIAL
A ceramic powder containing at least one of a nitride and a carbonitride of a metal element as a major component, the metal element being one or more elements selected from the group consisting of a group 4 element, a group 5 element and a group 6 element, the ceramic powder having particles having an average particle size of 5 m or less, and an oxygen content of 0.3% by mass or less.
Active material and fluoride ion battery
A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.x in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05?x?3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1?y?3, and z satisfies 0.15?z?6.
Active material and fluoride ion battery
A main object of the present disclosure is to provide an active material of which capacity properties are excellent. The present disclosure achieves the object by providing an active material to be used for a fluoride ion battery, the active material comprising: a composition represented by M.sup.1N.sub.x in which M.sup.1 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, and x satisfies 0.05?x?3; or a composition represented by M.sup.2Ln.sub.yN.sub.z in which M.sup.2 is at least one kind of Cu, Ti, V, Cr, Fe, Mn, Co, Ni, Zn, Nb, In, Sn, Ta, W, and Bi, Ln is at least one kind of Sc, Y, and lanthanoid, y satisfies 0.1?y?3, and z satisfies 0.15?z?6.