Provided is a novel polyoxometalate and a method for producing the polyoxometalate. The polyoxometalate is represented by the compositional formula: M.sub.xO.sub.y in which M is tungsten, molybdenum or vanadium; 4x1000; and 2.5y/x7.

A method for preparing a negative electrode active material, a negative electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a negative electrode active material including the steps of (a) preparing a coating composition including a precursor of metal-phosphorous-oxynitride; (b) forming a precursor layer on a negative electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the negative electrode active material by heat treating the negative electrode active material having the precursor layer formed thereon. The method for preparing a negative electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

A GaON/ZnO photoelectrode involving a nanoarchitectured photocatalytic material deposited onto a surface of a conducting substrate, and the nanoarchitectured photocatalytic material containing gallium oxynitride nanoparticles interspersed in zinc oxide nanoparticles, as well as methods of preparing the GaON/ZnO photoelectrode. A method of using the GaON/ZnO photoelectrode for solar water electrolysis is also provided.

A method for preparing a positive electrode active material, a positive electrode active material prepared using the same, and a lithium secondary battery, and in particular, to a method for preparing a positive electrode active material comprising the steps of (a) preparing a coating composition including a precursor of metal-phosphorous-oxynitride; (b) forming a precursor layer on a positive electrode active material with the coating composition of (a) using a solution process; and (c) forming a metal-phosphorous-oxynitride protective layer on the positive electrode active material by heat treating the positive electrode active material having the precursor layer formed thereon. The method for preparing a positive electrode active material uses a solution process, which is advantageous in terms of simplifying the whole process and reducing costs, and high capacity, high stabilization and long lifetime are obtained as well by the formed protective layer having excellent properties.

[Object] To provide a method for producing an electrical wiring member having a layered structure of copper wiring and a blackening layer and to provide the electrical wiring member through a search for a material for the blackening layer, the material being etched at a rate close to that for the copper wiring under conditions where etching controllability is ensured. [Solution] A method for producing an electrical wiring member according to the present invention includes a step of forming, on at least one main surface of a substrate, a layered film 6 of a Cu layer 3 and CuNO-based blackening layers (2a and 2b); a step of forming a resist layer 4a in a predetermined region on the layered film 6; and a step of removing a partial region of the layered film 6 by bringing the layered film 6 into contact with an etchant.

A composition for catalysis of a Haber-Bosch process to produce ammonia; a process employing the composition and an anion vacant lattice for use in the process.

The composition comprises an anion vacant lattice and a Haber-Bosch catalyst (e.g. Fe or Ru). Suitable anion vacant lattices include oxynitrides and oxides, which may be doped or undoped, including

Ce.sub.aM.sub.bO.sub.2-xN.sub.y(Formula III)

M is one or more elements with a valence lower than 4. a and b are independently in the range 0.05 to 0.95, with the proviso that a and b together sum to 1 (approximately). X is greater than 0 and less than 2. Y is greater than zero and less than or equal to X.

To provide a sintered material having excellent oxidation resistance, as well as excellent abrasion resistance and chipping resistance. A sintered material containing a first compound formed of Ti, Al, Si, O, and N is provided.

Provided is a black-film-forming mixed powder containing: (A) a zirconium nitride powder that does not contain zirconium dioxide, a low-order oxide of zirconium, or a low-order oxynitride of zirconium; and (B) a titanium nitride powder or a titanium oxynitride powder, wherein the content ratio of (A) the zirconium nitride powder and (B) the titanium nitride powder or the titanium oxynitride powder is within the range of 90:10 to 25:75 in terms of mass ratio (A:B). When the light transmittance at a wavelength of 400 nm is X, the light transmittance at a wavelength of 550 nm is Y, and the light transmittance at a wavelength of 1,000 nm is Z in a spectrum of a dispersion in which the mixed powder is dispersed in a concentration of 50 ppm, X>10%, Y<10%, Z<16%, X/Y is 1.25 or more, and Z/Y is 2.0 or less.

The object of the present invention is to provide a dielectric thin film and a capacitance element having excellent dielectric property. A dielectric thin film comprising a main component comprised of an oxynitride expressed by a compositional formula of A.sub.aB.sub.bO.sub.oN.sub.n (a+b+o+n=5), wherein said A is one or more selected from the group consisting of Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, said B is one or more selected from the group consisting of Ta, Nb, Ti, and W, and crystalline particles constituting said dielectric thin film are polycrystalline which are not aligned to a particular crystal plane orientation, and a size of a crystallite of the crystalline particles included in the dielectric thin film is 100 nm or less.

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-BON oxynitride. When the A-BON oxynitride is represented by the compositional formula A.sub.aB.sub.bO.sub.oN.sub.n, (o+n)/a<3.00 is satisfied.