Disclosed is a method of preparing a carbide-derived carbon having high ion mobility for use in a lithium battery anode material, a lithium air battery electrode, a supercapacitor electrode, and a flow capacitor electrode, including thermally treating a carbide compound in a vacuum, thus obtaining a vacuum-treated carbide compound; and thermochemically reacting the vacuum-treated carbide compound with a halogen element-containing gas, thus extracting the element other than carbon from the vacuum-treated carbide compound, wherein annealing can be further performed after thermochemical reaction. This carbide-derived carbon has a small pore distribution, dense graphite fringe, and a large lattice spacing and thus high ion mobility, compared to conventional carbide-derived carbon obtained only by thermochemical reaction with a halogen element-containing gas.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Disclosed herein is a method for preparing ultrafine titanium carbonitride powder under a relatively low temperature condition that obviates a grinding process. This method includes the steps of: a mixing step for contacting titanium dioxide (TiO2), calcium (Ca) and carbon (C) under an inert atmosphere, a synthesis step for reacting the resultant mixture by heating at a temperature of about 600-1500° C. or lower under a nitrogen atmosphere; and a washing step for removing calcium oxide by washing this mixture.

The invention relates to a method for producing dialkylamido element compounds. In particular, the invention relates to a method for producing dialkylamido element compounds of the type E(NRR′).sub.x, wherein first WAIN is reacted with HNRR′ in order to form M[Al(NRR′).sub.4] and hydrogen, and then the formed M[Al(NRR′).sub.4] is reacted with EX.sub.x in order to form E(NRR′).sub.x and M[AlX.sub.4], wherein M=Li, Na, or K, R=C.sub.nH.sub.2n+1, where n=1 to 20, and independently thereof R′=C.sub.nH.sub.2n+1, where n=1 to 20, E is an element of the groups 3 to 15 of the periodic table of elements, X=F, Cl, Br, or I, and x=2, 3, 4 or 5.

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O.sub.2 and NH.sub.3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Several variations of synthetic carbon materials are disclosed. The materials can assume a variety of properties, including high electrical conductivity. The materials also can have favorable structural and mechanical properties. They can form gas impenetrable barriers, form insulating structures, and can have unique optical properties.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

A titanium carbonitride powder for use as a starting material for a hard material satisfies a D50 of from 2.0 μm to 6.0 μm and a D10/D90 of from 0.20 to 0.50, wherein D50 is a particle size at a cumulative percentage of 50% of a particle size distribution by volume, D10 is a particle size at a cumulative percentage of 10% of the particle size distribution by volume, and D90 is a particle size at a cumulative percentage of 90% of the particle size distribution by volume.

There is provided a coral-like composite material comprising highly dispersed conductive metal nitride, metal carbide or metal carbonitride nanoparticles on mesoporous carbon nanosheets, and a method of preparing the same. There is also provided a coating material for a modified separator of a lithium-sulfur battery comprising the coral-like composite material as described herein, a conducting carbon material and a binder, and a method of preparing the same.