Provided is a boron nitride sintered body in which an average number of lump particles having a particle size of 30 μm or more formed by aggregation of primary particles of boron nitride is 3 or less in a cross-sectional image including 100 or more particles observed at a magnification of 500 times with a scanning electron microscope. A method of manufacturing a boron nitride sintered body includes a nitriding step of sintering a raw material powder containing boron carbide in a nitrogen-containing atmosphere to obtain a fired product containing boron carbonitride, a pulverizing step of pulverizing the fired product to obtain a boron carbonitride powder having a specific surface area of 12 m.sup.2/g or more, and a firing step of molding and heating a blend containing the boron carbonitride powder and a sintering aid to obtain a boron nitride sintered body.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R′ is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

A poorly crystalline mixed metal manganese oxide material. The mixed metal manganese oxide material may be used for making a cathode for a rechargeable battery. Generally, the mixed metal manganese oxide includes: manganese oxide; copper, silver, gold, or a combination thereof; a first additional cation selected from the group consisting of: bismuth, lead, and mixtures thereof; and a second additional cation selected from the group consisting of: lithium, sodium, potassium, cesium, rubidium, beryllium, magnesium, calcium, strontium, barium, NR.sub.4.sup.+, or a combination thereof, with R being, hydrogen, an alkyl group, an aryl group, or combinations thereof. The amorphous composition has an essentially amorphous x-ray powder diffraction pattern.

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:
R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6  I
where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

An interconnect structure includes a metal interconnect layer, a dielectric layer on the metal interconnect layer, a fluorocarbon layer on the dielectric layer, a metal interconnect extending through the fluorocarbon layer and the dielectric layer to the metal interconnect layer. The metal interconnect includes a first portion extending through the fluorocarbon layer and into an upper portion of the dielectric layer and a second portion below the first portion and extending through a lower portion of the dielectric layer to the metal interconnect layer.

A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.

In an aspect, the present disclosure provides a heat-treated transition metal carbonitride MXene film annealed at high temperatures and a polymer composite comprising the same. In another aspect, the present disclosure provides a method for producing a heat-treated transition metal carbonitride MXene film comprising: obtaining a MXene aqueous solution containing dispersed 2-dimensional (2D) MXenes through an acid etching process; filtering the obtained MXene aqueous solution through a vacuum filtration process to produce a free-standing film; and annealing the produced free-standing film at high temperatures to obtain a heat-treated transition metal carbonitride MXene film. In still another aspect, the present disclosure provides an electromagnetic interference (EMI) shielding method comprising: superposing a coating comprising a heat-treated transition metal carbonitride MXene film on at least one surface of an object in a contact or non-contact manner.

Methods for plasma enhanced chemical vapor deposition (PECVD) of silicon carbonitride films are described. A flowable silicon carbonitride film is formed on a substrate surface by exposing the substrate surface to a precursor and a reactant, the precursor having a structure of general formula (I) or general formula (II)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.9, R.sup.10, R.sup.11, and R.sup.12 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; purging the processing chamber of the silicon precursor, and then exposing the substrate to an ammonia plasma.