Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I):

##STR00001##

in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Several variations of synthetic carbon materials are disclosed. The materials can assume a variety of properties, including high electrical conductivity. The materials also can have favorable structural and mechanical properties. They can form gas impenetrable barriers, form insulating structures, and can have unique optical properties.

A method for manufacturing an interconnect structure includes providing a metal interconnect layer, forming a dielectric layer on the metal interconnect layer, forming a fluorocarbon layer on the dielectric layer, forming a patterned hardmask layer on the fluorocarbon layer, etching the fluorocarbon layer and the dielectric layer using the patterned hardmask layer as a mask to form a trench in the dielectric layer and a through-hole through the dielectric layer to the metal interconnect layer, forming a metal layer filling the trench and the through-hole, and planarizing the metal layer until the planarized metal layer has an upper surface that is flush with an upper surface of the fluorocarbon layer. The interconnect structure thus formed has an improved reliability.

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:

R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6I

where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

Hydridosilapyrroles and hydridosilaazapyrrole are a new class of heterocyclic compounds having a silicon bound to carbon and nitrogen atoms within the ring system and one or two hydrogen atoms on the silicon atom. The compounds have formula (I): ##STR00001##
in which R is a substituted or unsubstituted organic group and R is an alkyl group. These compounds react with a variety of organic and inorganic hydroxyl groups by a ring-opening reaction and may be used to produce silicon nitride or silicon carbonitride films.

Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Disclosed herein are chlorodisazanes; silicon-heteroatom compounds synthesized therefrom; devices containing the silicon-heteroatom compounds; methods of making the chlorodisilazanes, the silicon-heteroatom compounds, and the devices; and uses of the chlorodisilazanes, silicon-heteroatom compounds, and devices.

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:
R.sup.1Si(NR.sup.2R.sup.3)(NR.sup.4R.sup.5)OR.sup.6I
where R.sup.1 is selected from hydrogen, a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.2, R.sup.3, R.sup.4, and R.sup.5 are each independently selected from hydrogen, a C.sub.4 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.3 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group; R.sup.6 is selected from a C.sub.1 to C.sub.10 linear alkyl group, a C.sub.3 to C.sub.10 branched alkyl group, a C.sub.3 to C.sub.10 cyclic alkyl group, a C.sub.3 to C.sub.10 alkenyl group, a C.sub.2 to C.sub.10 alkynyl group, and a C.sub.4 to C.sub.10 aromatic hydrocarbon group.

An inorganic filler included in an epoxy resin composition includes a coating layer formed on a surface thereof, and the surface of the coating layer includes at least two elements selected from the group consisting of C, N and O.

A method utilizes easily obtained carbon as carbon source for sintering, followed by high energy ball milling process with planetary ball mill for high energy homogenous mixing of the carbon source, solvent and nano-level silicon dioxide powder, along with a high energy ball milling process repeatedly performed using different sized ball mill beads, so as to formulate a spray granulation slurry with the optimal viscosity, to complete the process of micronization of carbon source evenly encapsulated by silicon dioxide powders. The optimal ratio of C/SiO.sub.2 is 1-2.5 to produce a spherical silicon dioxide powder (40-50 m) evenly encapsulated by the carbon source. The powder is then subjected to a high temperature (1450) sintering process under nitrogen gas. Lastly, the sintered silicon nitride powder is subjected to homogenizing carbon removal process in a rotational high temperature furnace to complete the fabricating process.