The invention relates to a method for producing transition metal compounds having the general composition Me.sub.aC.sub.bN.sub.cH.sub.d where Me=transition metal or transition metal mixture, a=1-4, b=6-9, c=8-14 and d=0-8, wherein a reaction mixture consisting of transition metals and/or transition metal compounds and non-condensed or slightly condensed CNH compounds are subjected to a heat treatment, wherein the content of transition metals and/or transition metal compounds is at least 6 mole percent, preferably 10 to 40 mole percent, relative to the reaction mixture. The invention further relates to transition metal compounds produced in such a manner and to uses thereof.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I:

##STR00001##

wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

An inorganic filler included in an epoxy resin composition includes a coating layer formed on a surface thereof, and the surface of the coating layer includes at least two elements selected from the group consisting of C, N and O.

Feed material comprising uniform solution precursor droplets is processed in a uniform melt state using microwave generated plasma. The plasma torch employed is capable of generating laminar gas flows and providing a uniform temperature profile within the plasma. Plasma exhaust products are quenched at high rates to yield amorphous products. Products of this process include spherical, highly porous and amorphous oxide ceramic particles such as magnesia-yttria (MgOY.sub.2O.sub.3). The present invention can also be used to produce amorphous non oxide ceramic particles comprised of Boron, Carbon, and Nitrogen which can be subsequently consolidated into super hard materials.

Provided are methods for the deposition of films comprising SiCN and SiCON. Certain methods involve exposing a substrate surface to a first and second precursor, the first precursor having a formula (X.sub.yH.sub.3-ySi).sub.zCH.sub.4-z, (X.sub.yH.sub.3-ySi)(CH.sub.2)(SiX.sub.pH.sub.2-p)(CH.sub.2)(SiX.sub.yH.sub.3-y), or (X.sub.yH.sub.3-ySi)(CH.sub.2).sub.n(SiX.sub.yH.sub.3-y), wherein X is a halogen, y has a value of between 1 and 3, and z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5, and the second precursor comprising a reducing amine. Certain methods also comprise exposure of the substrate surface to an oxygen source to provide a film comprising SiCON.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001##
wherein R.sup.1 is selected from linear or branched C.sub.3 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.10 alkenyl group, linear or branched C.sub.3 to C.sub.10 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, electron withdrawing group, and C.sub.6 to C.sub.10 aryl group; R.sup.2 is selected from hydrogen, linear or branched C.sub.1 to C.sub.10 alkyl group, linear or branched C.sub.3 to C.sub.6 alkenyl group, linear or branched C.sub.3 to C.sub.6 alkynyl group, C.sub.1 to C.sub.6 dialkylamino group, C.sub.6 to C.sub.10 aryl group, linear or branched C.sub.1 to C.sub.6 fluorinated alkyl group, electron withdrawing group, and C.sub.4 to C.sub.10 aryl group; optionally wherein R.sup.1 and R.sup.2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

A method for forming an oxide coated substrate comprising heating a pre-coating mixture in the presence of a substrate to synthesize an oxide coating on the substrate. The pre-coating mixture comprises a solubilized reducing additive, a solubilized oxidizing additive, and the substrate. The heating is conducted at a temperature sufficiently high enough to exothermically react the solubilized reducing additive and solubilized oxidizing additive and low enough to control the phase and composition of the oxide.

Provided is a light emitting element including: a light emitting stack member including a first semiconductor layer including a metal nitride doped with a dopant having a first conductivity type, a second semiconductor layer including a metal nitride doped with a dopant having a second conductivity type opposite to the first conductivity type, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and a first insulative film covering at least a portion of an outer circumferential surface of the light emitting stack member. The first insulative film includes a nitrogen-containing Group IV element oxide. In the nitrogen-containing Group IV element oxide, a content ratio of nitrogen:Group IV element is in a range of about 0.1:1 and about 1:1, based on a unit (atomic %).