Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800° C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a NH free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising NH free repeating units having the formula [N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

A Si-containing film forming composition comprising a catalyst and/or a polysilane and a NH free, C-free, and Si-rich perhydropolysilazane having a molecular weight ranging from approximately 332 dalton to approximately 100,000 dalton and comprising NH free repeating units having the formula [N(SiH3)x(SiH2-)y], wherein x=0, 1, or 2 and y=0, 1, or 2 with x+y=2; and x=0, 1 or 2 and y=1, 2, or 3 with x+y=3. Also disclosed are synthesis methods and applications for using the same.

Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40 C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H.sub.2), silane gas (SiH.sub.4), and ammonia gas (NH.sub.3), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

A method of making an organoaminosilane compound, comprising i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, where A), B) and C) are combined under sufficient conditions to form the organoaminosilane compound and hydrogen. A method of making a silylamine, the method comprising: i) forming an organoaminosilane compound by i) combining A) a compound comprising a primary or secondary amine, B) monosilane (SiH.sub.4), and C) a catalyst, where the catalyst comprises magnesium or boron, and ii) combining ammonia and the organoaminosilane compound produced in i) under sufficient conditions to form a silylamine product and a byproduct, where the byproduct is a primary or secondary amine.

A process for producing ammonia and a derivative of ammonia from a natural gas feed comprising conversion of natural gas into a make-up synthesis gas; synthesis of ammonia; use of said ammonia to produce said derivative of ammonia, wherein a portion of the natural gas feed is used to fuel a gas turbine; power produced by said gas turbine is transferred to at least one power user of the process, such as a compressor; heat is recovered from exhaust gas of said gas turbine, and at least part of said heat is recovered as low-grade heat available at a temperature not greater than 200 C., to provide process heating to at least one thermal user of the process, such as CO.sub.2 removal unit or absorption chiller; a corresponding plant and method of modernization are also disclosed.

A process for producing ammonia and a derivative of ammonia from a natural gas feed comprising conversion of natural gas into a make-up synthesis gas; synthesis of ammonia; use of said ammonia to produce said derivative of ammonia, wherein a portion of the natural gas feed is used to fuel a gas turbine; power produced by said gas turbine is transferred to at least one power user of the process, such as a compressor; heat is recovered from exhaust gas of said gas turbine, and at least part of said heat is recovered as low-grade heat available at a temperature not greater than 200 C., to provide process heating to at least one thermal user of the process, such as CO.sub.2 removal unit or absorption chiller; a corresponding plant and method of modernization are also disclosed.

The present invention provides processes for preparing silanylamines, such as disilanylamines and polysilanylamines, and compositions comprising the silanylamines. In one embodiment, the present invention provides processes for preparing a silanylamine compound, the processes comprising reacting a starting compound of general formula RR.sup.1N(Si.sub.xH.sub.2x+1) with an amine compound of general formula R.sup.2R.sup.3NH to produce the silanylamine compound of general formula R.sup.2.sub.mR.sup.3.sub.nN(Si.sub.xH.sub.2+1).sub.3-m-n.

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an .sup.1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl.sub.3, when a peak derived from N.sub.3SiH.sub.1 and N.sub.2SiH.sub.2 is referred to as Peak 1 and a peak derived from NSiH.sub.3 is referred to as Peak 2, a ratio (P.sub.1/(P.sub.1+P.sub.2)) of an area (P.sub.1) of Peak 1 relative to a total area (P.sub.1+P.sub.2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P.sub.A/P.sub.B) of an area (P.sub.A) of Region A relative to an area (P.sub.B) of Region B is greater than or equal to about 1.5.