Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800 C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.

Described herein is an apparatus comprising a plurality of silicon-containing layers wherein the silicon-containing layers are selected from a silicon oxide and a silicon nitride layer or film. Also described herein are methods for forming the apparatus to be used, for example, as 3D vertical NAND flash memory stacks. In one particular aspect or the apparatus, the silicon oxide layer comprises slightly compressive stress and good thermal stability. In this or other aspects of the apparatus, the silicon nitride layer comprises slightly tensile stress and less than 300 MPa stress change after up to about 800 C. thermal treatment. In this or other aspects of the apparatus, the silicon nitride layer etches much faster than the silicon oxide layer in hot H.sub.3PO.sub.4, showing good etch selectivity.

A rapid, centrifugal method to prepare polysilazanes and separate them from their ammonium halide-anhydrous, liquid ammonia by-product is coupled with several, alternative methods to recover ammonium halide and anhydrous, liquid ammonia from the by-product. Some reactive modes of by-product recovery lead to sodium chloride as the sole waste product of, optionally, to ammonia borane as a secondary product of the process.

A rapid, centrifugal method to prepare polysilazanes and separate them from their ammonium halide-anhydrous, liquid ammonia by-product is coupled with several, alternative methods to recover ammonium halide and anhydrous, liquid ammonia from the by-product. Some reactive modes of by-product recovery lead to sodium chloride as the sole waste product of, optionally, to ammonia borane as a secondary product of the process.

A method and system for selectively recovering monochlorosilane and dichlorosilane from polysilicon production process are provided. The system and method selectively recover the monochlorosilane and the dichlorosilane contained in an exhaust stream discharged from a chemical vapor deposition unit for a polysilicon production process and the monochlorosilanes and the dichlorosilanes may be obtained with minimal capital investment or complexity.

A method and system for selectively recovering monochlorosilane and dichlorosilane from polysilicon production process are provided. The system and method selectively recover the monochlorosilane and the dichlorosilane contained in an exhaust stream discharged from a chemical vapor deposition unit for a polysilicon production process and the monochlorosilanes and the dichlorosilanes may be obtained with minimal capital investment or complexity.

A process for producing ammonia and a derivative of ammonia from a natural gas feed comprising conversion of natural gas into a make-up synthesis gas; synthesis of ammonia; use of said ammonia to produce said derivative of ammonia, wherein a portion of the natural gas feed is used to fuel a gas turbine; power produced by said gas turbine is transferred to at least one power user of the process, such as a compressor; heat is recovered from exhaust gas of said gas turbine, and at least part of said heat is recovered as low-grade heat available at a temperature not greater than 200? C., to provide process heating to at least one thermal user of the process, such as CO.sub.2 removal unit or absorption chiller; a corresponding plant and method of modernization are also disclosed.

A process for producing ammonia and a derivative of ammonia from a natural gas feed comprising conversion of natural gas into a make-up synthesis gas; synthesis of ammonia; use of said ammonia to produce said derivative of ammonia, wherein a portion of the natural gas feed is used to fuel a gas turbine; power produced by said gas turbine is transferred to at least one power user of the process, such as a compressor; heat is recovered from exhaust gas of said gas turbine, and at least part of said heat is recovered as low-grade heat available at a temperature not greater than 200? C., to provide process heating to at least one thermal user of the process, such as CO.sub.2 removal unit or absorption chiller; a corresponding plant and method of modernization are also disclosed.

The present disclosure relates to the technical field of preparation of trisilylamine (TSA), in particular to a method for preparing TSA at an ultra-low temperature. The present disclosure provides a method for preparing TSA without a solvent at an ultra-low temperature, where by-products generated by a reaction can be easily removed by filtration with a metal ion-adsorption permeable membrane. The TSA obtained by the reaction has a gas chromatography (GC) purity of 99.5%, a receivable yield of not less than 85% (in terms of ammonia), and a metal ion purity of 6N. In addition, the method has a simple device, a high reaction degree of raw materials, a lower cost, a great market value, and a better industrial production benefit.

The present disclosure relates to the technical field of preparation of trisilylamine (TSA), in particular to a method for preparing TSA at an ultra-low temperature. The present disclosure provides a method for preparing TSA without a solvent at an ultra-low temperature, where by-products generated by a reaction can be easily removed by filtration with a metal ion-adsorption permeable membrane. The TSA obtained by the reaction has a gas chromatography (GC) purity of 99.5%, a receivable yield of not less than 85% (in terms of ammonia), and a metal ion purity of 6N. In addition, the method has a simple device, a high reaction degree of raw materials, a lower cost, a great market value, and a better industrial production benefit.