An apparatus for manufacturing a quantum dot is provided, the apparatus including a first supplying part that provides a cationic precursor, a second supplying part that provides an anionic precursor, a mixing part connected to the first supplying part and the second supplying part, and a reaction part including a reaction tube configured to receive a liquid mixture of the cationic precursor and the anionic precursor from the mixing part and a first microwave generator configured to provide a microwave that is transmitted through the reaction tube. Therefore, the apparatus may produce a quantum dot of multi-element compounds.

A solid electrolyte material comprising Li, T, X and A wherein T is at least one of P, As, Si, Ge, Al, and B; X is BH.sub.4; A is S, Se, or N. The solid electrolyte material may include glass ceramic and/or mixed crystalline phases, and exhibits high ionic conductivity and compatibility with high voltage cathodes and lithium metal anodes.

Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to Ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included in addition to, or in place of, magnesium. The core may further include other ions, such as selenium, and/or sulfur. The core may be coated with one (or more) shells of semiconductor material. Example shell semiconductor materials include semiconductors containing zinc, sulfur, selenium, iron and/or oxygen ions.

A proton-exchange-membrane fuel cell bipolar plate includes a metal substrate having a bulk portion and a surface portion including an anticorrosive, conductive binary phosphide material having a formula (I):

A.sub.xP.sub.y(I),

where A is an alkali metal, alkaline earth metal, transition metal, post-transition metal, or metalloid, x, y is each a number independently selected from 1 to 15, and the binary phosphide material is configured to impart anticorrosive and conductive properties to the metal substrate.

The present disclosure provides a manganese-doped InZnP quantum dot having high reproducibility and exhibiting superior optical efficiency, and a method of manufacturing the quantum dot. According to an aspect of an exemplary embodiment, the manganese-doped InZnP quantum dot is of manufactured by synthesizing an InZnP quantum dot by reacting indium acetate, zinc acetate, and tris(trimethylsilyl)phosphine; and then doping the InZnP quantum dot with manganese.

A texture inducing structure for alloy films is provided. The texture inducing structure includes a substrate, a texture-inducing layer and a deposition layer. The texture-inducing layer is formed on the substrate. The texture-inducing layer has an intrinsically strong crystalline texture, a texture coefficient of the texture-inducing layer is greater than 2, and a thickness of the texture-inducing layer is ranged from 0.1 m to 6 m. The deposition layer is formed on the texture-inducing layer. A texture of the deposition layer is induced by the texture-inducing layer thereby changing the magnetic anisotropy and the magnetic strength of the deposition layer, a thickness of the deposition layer is ranged from 1 m60 m, and the thickness of the deposition layer is greater than that of the texture-inducing layer.

Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to Ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included in addition to, or in place of, magnesium. The core may further include other ions, such as selenium, and/or sulfur. The core may be coated with one (or more) shells of semiconductor material. Example shell semiconductor materials include semiconductors containing zinc, sulfur, selenium, iron and/or oxygen ions.

A solid electrolyte material comprising Li, T, X and A wherein T is at least one of P, As, Si, Ge, Al, and B; X is BH.sub.4; A is S, Se, or N. The solid electrolyte material may include glass ceramic and/or mixed crystalline phases, and exhibits high ionic conductivity and compatibility with high voltage cathodes and lithium metal anodes.

A set of nanocrystals comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the III oxidation state, the nanocrystals being doped, on average per nanocrystal, by an atom of C chosen from the transition metals in the +I or +II oxidation state and various uses thereof.

Quantum dot semiconductor nanoparticle compositions that incorporate ions such as zinc, aluminum, calcium, or magnesium into the quantum dot core have been found to be more stable to Ostwald ripening. A core-shell quantum dot may have a core of a semiconductor material that includes indium, magnesium, and phosphorus ions. Ions such as zinc, calcium, and/or aluminum may be included in addition to, or in place of, magnesium. The core may further include other ions, such as selenium, and/or sulfur. The core may be coated with one (or more) shells of semiconductor material. Example shell semiconductor materials include semiconductors containing zinc, sulfur, selenium, iron and/or oxygen ions.