Patent classifications
C01B32/158
Integrated circuit, method for manufacturing same, and radio communication device using same
An integrated circuit includes a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory. The memory array includes a first semiconductor memory element having a first semiconductor layer. The rectifying circuit includes a second semiconductor rectifying element having a second semiconductor layer. The logic circuit includes a third semiconductor logic element having a third semiconductor layer. The second semiconductor layer is a functional layer exhibiting a rectifying action and the third semiconductor layer is a channel layer of a logic element. All the first, second and third semiconductor layers, the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.
Integrated circuit, method for manufacturing same, and radio communication device using same
An integrated circuit includes a memory array that stores data, a rectifying circuit that rectifies an alternating current and generates a direct-current voltage, and a logic circuit that reads data stored in a memory. The memory array includes a first semiconductor memory element having a first semiconductor layer. The rectifying circuit includes a second semiconductor rectifying element having a second semiconductor layer. The logic circuit includes a third semiconductor logic element having a third semiconductor layer. The second semiconductor layer is a functional layer exhibiting a rectifying action and the third semiconductor layer is a channel layer of a logic element. All the first, second and third semiconductor layers, the functional layer exhibiting a rectifying action and the channel layer are formed of the same material including at least one selected from an organic semiconductor, a carbon nanotube, graphene, or fullerene.
Ultra-long chiral carbon nanotube, method for preparing the same, application thereof, and high-performance photoelectric device
This disclosure relates to the technical field of carbon nanotubes, provides an ultra-long chiral carbon nanotube and a method for preparing the same. The ultra-long chiral carbon nanotube has a diameter of about 1.5 nm to 5.5 nm and has a length of about 100 mm to 650 mm, the ultra-long chiral carbon nanotube includes a double-walled carbon nanotube and a triple-walled carbon nanotube, and each layer of the ultra-long chiral carbon nanotube is semiconducting and has a helix angle greater than 10°.
Ultra-long chiral carbon nanotube, method for preparing the same, application thereof, and high-performance photoelectric device
This disclosure relates to the technical field of carbon nanotubes, provides an ultra-long chiral carbon nanotube and a method for preparing the same. The ultra-long chiral carbon nanotube has a diameter of about 1.5 nm to 5.5 nm and has a length of about 100 mm to 650 mm, the ultra-long chiral carbon nanotube includes a double-walled carbon nanotube and a triple-walled carbon nanotube, and each layer of the ultra-long chiral carbon nanotube is semiconducting and has a helix angle greater than 10°.
Insulated nanofiber yarns
An insulated nanofiber having a continuous nanofiber collection extending along a longitudinal axis with an outside surface and an inside portion is described. A first material infiltrates the inside portion, where the outside surface of the nanofiber collection is substantially free of the first material. An electrically-insulating second material coats the outside surface of the nanofiber collection. A method of making an insulated nanofiber collection is also disclosed.
Insulated nanofiber yarns
An insulated nanofiber having a continuous nanofiber collection extending along a longitudinal axis with an outside surface and an inside portion is described. A first material infiltrates the inside portion, where the outside surface of the nanofiber collection is substantially free of the first material. An electrically-insulating second material coats the outside surface of the nanofiber collection. A method of making an insulated nanofiber collection is also disclosed.
CARBON NANOTUBE SHEET FOR AIR OR WATER PURIFICATION
The present disclosure provides a filter for removing contaminants from a liquid or gaseous medium including a woven or nonwoven sheet of entangled carbon nanotubes. The present disclosure also provides a method for reducing the concentration of contaminants in a liquid or gaseous medium by contacting the liquid or gaseous medium with the filter.
CARBON NANOTUBE SHEET FOR AIR OR WATER PURIFICATION
The present disclosure provides a filter for removing contaminants from a liquid or gaseous medium including a woven or nonwoven sheet of entangled carbon nanotubes. The present disclosure also provides a method for reducing the concentration of contaminants in a liquid or gaseous medium by contacting the liquid or gaseous medium with the filter.
METAL-CARBON-NANOTUBE METAL MATRIX COMPOSITES FOR METAL CONTACTS ON PHOTOVOLTAIC CELLS
A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.
METAL-CARBON-NANOTUBE METAL MATRIX COMPOSITES FOR METAL CONTACTS ON PHOTOVOLTAIC CELLS
A solar cell structure is disclosed that includes a first metal layer, formed over predefined portions of a sun-exposed major surface of a semiconductor structure, that form electrical gridlines of the solar cell; a network of carbon nanotubes formed over the first metal layer; and a second metal layer formed onto the network of carbon nanotubes, wherein the second metal layer infiltrates the network of carbon nanotubes to connect with the first metal layer to form a first metal matrix composite comprising a metal matrix and a carbon nanotube reinforcement, wherein the second metal layer is an electrically conductive layer in which the carbon nanotube reinforcement is embedded in and bonded to the metal matrix, and the first metal matrix composite provides enhanced mechanical support as well as enhanced or equal electrical conductivity for the electrical contacts against applied mechanical stressors to the electrical contacts.