The present disclosure provides methods for forming diamond nanostructures and diamonds from amorphous carbon nanostructures in ambient temperature and pressure by irradiating carbon nanostructures to an undercooled state and quenching the melted carbon to convert a portion of the nanostructure into diamond.

A method for forming mesophase pitch can include applying a stimulus to a first amount of coal tar to form a first amount of mesophase pitch. The stimulus can include one or more of an electromagnetic field (“EMF”) or a magnetic field. The method can further include evaluating a characteristic of the first amount of mesophase pitch, changing a parameter of the stimulus in response to evaluating the characteristic of the first amount of mesophase pitch, and applying the stimulus exhibiting the changed parameters to a second amount of coal tar to form mesophase pitch.

A method for forming mesophase pitch can include applying a stimulus to a first amount of coal tar to form a first amount of mesophase pitch. The stimulus can include one or more of an electromagnetic field (“EMF”) or a magnetic field. The method can further include evaluating a characteristic of the first amount of mesophase pitch, changing a parameter of the stimulus in response to evaluating the characteristic of the first amount of mesophase pitch, and applying the stimulus exhibiting the changed parameters to a second amount of coal tar to form mesophase pitch.

Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp.sup.3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp.sup.3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.

A sensor element including a diamond in which nitrogen-vacancy centers in a diamond crystal structure stabilize in a negative charge state. By ensuring that the diamond of the sensor element is n-type phosphorus-doped and contains nitrogen-vacancy centers in the crystal structure, the probability that nitrogen-vacancy centers in the diamond lattice are in a neutral state decreases, and the nitrogen-vacancy centers stabilize in a negative charge state.

A method of forming a polycrystalline diamond body includes mixing a sintering agent with diamond powder to form a premixed layer, the sintering agent including at least one alkaline earth metal carbonate; forming an infiltration layer adjacent to the premixed layer, the infiltration layer including an infiltrant material including at least one alkaline earth metal carbonate; and subjecting the premixed layer and the infiltration layer to high pressure high temperature conditions.

A method of forming a polycrystalline diamond body includes mixing a sintering agent with diamond powder to form a premixed layer, the sintering agent including at least one alkaline earth metal carbonate; forming an infiltration layer adjacent to the premixed layer, the infiltration layer including an infiltrant material including at least one alkaline earth metal carbonate; and subjecting the premixed layer and the infiltration layer to high pressure high temperature conditions.

A method of making molecularly doped nanodiamond. A versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions. Molecularly doped nanodiamonds that have direct incorporation of dopants and therefore without the need for ion implantation. Molecularly-doped diamonds that have fewer lattice defects than those made with ion implantation.