A method of making molecularly doped nanodiamond. A versatile method for doping diamond by adding dopants into a carbon precursor and producing diamond at high pressure, high temperature conditions. Molecularly doped nanodiamonds that have direct incorporation of dopants and therefore without the need for ion implantation. Molecularly-doped diamonds that have fewer lattice defects than those made with ion implantation.

The present invention provides a photo-exothermic composite material represented by Formula (I) of CNM-(Y.sup.1—R).sub.n1 (I) (wherein, CNM denotes a carbon nanomaterial, Y.sup.1 denotes a divalent linking group, R denotes a group derived from a fluorescent substance or pigment; and n1 is an integer of 1 or greater).

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0×10.sup.−5 volume % or more and 5.0×10.sup.−1 volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and/or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

Low temperature synthesis, growth and doping methods and resulting materials are disclosed. According to an aspect, a method for material transformation includes providing a target material comprising carbon and/or hydrocarbon. The method also includes placing the target material within a fluid comprising a hydrogen source. Further, the method includes applying energy to the target material such that at least some of the target material is transformed to the same material with new beneficial bonding configuration.

Methods and apparatuses for making nanomaterials are disclosed. The methods involve passing one or more source materials through a high pressure and high temperature chamber with an open throat, and then allowing the reactants to expand into a lower pressure, lower temperature zone. The source material is non-stoichiometric and fuel-rich so that excess un-combusted primary source material can form the nanomaterials. In some cases, the apparatus may be in the form of a modified rocket engine. The methods may be used to make various materials including: carbon nanotubes, boron nitride nanomaterials, titanium dioxide, and any materials that are currently produced by flame synthesis, including but not limited to electrocatalysts. The methods may also be used to make nanomaterials outside the Earth's atmosphere. The methods can include making, coating, or repairing structures in space, such as antennae.

Disclosed is a method of forming a conductive diamond layer on a surface of a carbon fibre substrate that is used as a component of an electrode for neural stimulation and/or electrochemical sensing. The method comprises functionalising at least a portion of the surface with a functionalising agent to facilitate coating the surface with the conductive diamond layer. The method also comprises providing a diamond precursor and depositing the diamond precursor over the functionalising agent to form the conductive diamond layer. The disclosure also relates to an electrode that is used as a component of an electrode for neural stimulation and/or electrochemical sensing.

Various aspects according to the instant published patent application relate to a functionalized nanoscale diamond. The functionalized nanoscale diamond includes a functionalized surface. The functionalized surface includes a brominated portion and a hydroxylated portion. In further aspects, the brominated portion can be reacted with an amine to form an aminated nanoscale diamond.

Various aspects according to the instant published patent application relate to a functionalized nanoscale diamond. The functionalized nanoscale diamond includes a functionalized surface. The functionalized surface includes a brominated portion and a hydroxylated portion. In further aspects, the brominated portion can be reacted with an amine to form an aminated nanoscale diamond.

An apparatus for the manufacture of cubic Boron Nitride includes a pressure vessel having a chamber therein, and a body located in the chamber. The pressure vessel and the body are formed of materials having different coefficients of expansion. The coefficient of expansion of the body is greater than the coefficient of expansion of the pressure vessel. The pressure vessel is formed from a material having a melting point in excess of 1327° C. and capable of withstanding a pressure of at least 4.4Gpa at a temperature of at least 1327° C. The chamber is configured to receive the body, and a Boron Nitride source, the apparatus further comprising a furnace configured to heat at least the body to a temperature at least of 1327° C. The coefficient of expansion of the body is selected such that upon heating thereof to at least 1327° C. the pressure exerted on the Boron Nitride source is at least 4.4Gpa.