A system for manufacturing a nanomaterial may include a first electrode; a second electrode spaced apart from the first electrode by a gap; and a chamber configured to enclose the first electrode, the second electrode, and a liquid. The system may also include a power supply configured to provide electrical energy to at least one of the first electrode and the second electrode; and a pump configured to cause the liquid to flow through the gap between the first electrode and the second electrode.

Provided are: a polyglycerin-chain surface-modified nanodiamond having excellent dispersibility in a low-polarity solvent; and a method of producing the polyglycerin-chain surface-modified nanodiamond. A surface-modified nanodiamond 1 includes a nanodiamond particle 2 and a surface-modifying group 3 that surface-modifies the nanodiamond particle 2, the surface-modifying group 3 having a polyglycerin chain in which a hydrogen atom of at least some of the hydroxyl groups in the polyglycerin chain is substituted by a monovalent organic group.

Provided are: a polyglycerin-chain surface-modified nanodiamond having excellent dispersibility in a low-polarity solvent; and a method of producing the polyglycerin-chain surface-modified nanodiamond. A surface-modified nanodiamond 1 includes a nanodiamond particle 2 and a surface-modifying group 3 that surface-modifies the nanodiamond particle 2, the surface-modifying group 3 having a polyglycerin chain in which a hydrogen atom of at least some of the hydroxyl groups in the polyglycerin chain is substituted by a monovalent organic group.

The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 1×10.sup.14/cm.sup.3 or higher, where M represents a metal or metalloid, and V represents a vacancy.

The present invention provides a fluorescent diamond containing an MV center emitting fluorescence at a concentration of 1×10.sup.14/cm.sup.3 or higher, where M represents a metal or metalloid, and V represents a vacancy.

In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such aa a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

In various exemplary embodiments, the present disclosure provides a process for the conversion of certain polymers into diamond and diamond-like materials using laser pulse annealing. The process includes transforming the polymer to carbon, melting the carbon and quenching the carbon melt into to form Q-carbon, diamond, and/or graphene. The process can be applied to a polymer film such aa a polytetrafluoroethylene (PTFE) tape. An object can be coated with the polymer film which can then be converted to Q-carbon, diamond, and/or graphene using laser pulse annealing. A process is also provided for making a three-dimensional object using a combination of, for example, 3D printing the polymer and converting each layer of polymer into Q-carbon, diamond and/or graphene.

A method of producing a fluorescent nanodiamond exhibiting a zero phonon line (ZPL) for NV.sup.0 and/or NV.sup.− on its the fluorescence emission wavelength spectrum. The method includes a detonation step of exploding at least one type of explosive in an airtight container to obtain a nanodiamond raw material, a first annealing step of annealing, at a temperature from 1000° C. to 1600° C., the nanodiamond raw material or a nanodiamond which is obtained by removing sp2 carbon through strong acid treatment, ozone treatment, or gas-phase oxidation of the nanodiamond raw material, a vacancy forming step of creating vacancies on the nanodiamond by irradiating the nanodiamond with an ion beam or an electron beam after the first annealing step, and a second annealing step of annealing, at a temperature from 600° C. to 900° C., the nanodiamond containing vacancies to form Nitrogen-Vacancy (NV) centers.

A method of producing a fluorescent nanodiamond exhibiting a zero phonon line (ZPL) for NV.sup.0 and/or NV.sup.− on its the fluorescence emission wavelength spectrum. The method includes a detonation step of exploding at least one type of explosive in an airtight container to obtain a nanodiamond raw material, a first annealing step of annealing, at a temperature from 1000° C. to 1600° C., the nanodiamond raw material or a nanodiamond which is obtained by removing sp2 carbon through strong acid treatment, ozone treatment, or gas-phase oxidation of the nanodiamond raw material, a vacancy forming step of creating vacancies on the nanodiamond by irradiating the nanodiamond with an ion beam or an electron beam after the first annealing step, and a second annealing step of annealing, at a temperature from 600° C. to 900° C., the nanodiamond containing vacancies to form Nitrogen-Vacancy (NV) centers.

The present invention relates to a fluorescent nanodiamond preparing method including a first operation of preparing nanodiamonds having an average particle diameter of 10 nm or less, a second operation of implanting plasma ions into the nanodiamonds, a third operation of heat-treating the nanodiamonds implanted with the plasma ions under a vacuum or inert gas atmosphere, a fourth operation of oxygen treatment of the heat-treated nanodiamonds under a gas atmosphere including oxygen to oxidize the surfaces of the nanodiamonds, a fifth operation of acid-treating the oxygen-treated nanodiamonds, a sixth operation of centrifuging and cleaning the acid-treated nanodiamonds, and a seventh operation of drying the cleaned nanodiamonds, wherein, in the second operation, the plasma ions are implanted at an incident ion dose of 10.sup.13 ions/cm.sup.2 or more and 10.sup.20 ions/cm.sup.2 or less.