In an embodiment, a polycrystalline diamond table includes a plurality of bonded diamond grains and a plurality of interstitial regions defined by the plurality of bonded diamond grains. The polycrystalline diamond table may be at least partially leached such that at least a portion of at least one interstitial constituent has been removed from at least a portion of the plurality of interstitial regions by exposure to a leaching agent. The leaching agent may include a mixture having a ratio of weight % hydrofluoric acid to weight % nitric acid of about 1.0 to about 2.4, and water in a concentration of about 50 weight % to about 85 weight %. Various other materials, articles, and methods are also disclosed.

The present invention is to provide a surface-modified nanodiamond having excellent affinity for an organic solvent and a resin and having high dispersibility in an organic solvent and in a resin. The surface-modified nanodiamond according to an embodiment of the present invention has a structure in which a surface of a nanodiamond particle is modified by a group represented by Formula (1) below. In Formula (1), R.sup.1 represents an aliphatic hydrocarbon group having 6 or more carbons. R.sup.2 and R.sup.3 may be the same or different and are each a hydrogen atom, an aliphatic hydrocarbon group having from 1 to 3 carbons, or a group represented by Formula (2) below. ##STR00001##

The present invention is to provide a surface-modified nanodiamond having excellent affinity for an organic solvent and a resin and having high dispersibility in an organic solvent and in a resin. The surface-modified nanodiamond according to an embodiment of the present invention has a structure in which a surface of a nanodiamond particle is modified by a group represented by Formula (1) below. In Formula (1), R.sup.1 represents an aliphatic hydrocarbon group having 6 or more carbons. R.sup.2 and R.sup.3 may be the same or different and are each a hydrogen atom, an aliphatic hydrocarbon group having from 1 to 3 carbons, or a group represented by Formula (2) below. ##STR00001##

An embodiment provides a method for modifying a carbon region on a boron-doped diamond electrode surface, comprising: placing a boron-doped diamond electrode surface in an aqueous solution, wherein the aqueous solution comprises an ionic treatment solution; applying a voltage difference across the boron-doped diamond electrode surface; and modifying a carbon region on an area of the boron-doped diamond electrode surface, wherein the modifying is responsive to application of the voltage while the boron-doped diamond electrode surface is in the aqueous solution, wherein the modification continues until a desired signal of the carbon region is reached. Other aspects are described and claimed.

An embodiment provides a method for modifying a carbon region on a boron-doped diamond electrode surface, comprising: placing a boron-doped diamond electrode surface in an aqueous solution, wherein the aqueous solution comprises an ionic treatment solution; applying a voltage difference across the boron-doped diamond electrode surface; and modifying a carbon region on an area of the boron-doped diamond electrode surface, wherein the modifying is responsive to application of the voltage while the boron-doped diamond electrode surface is in the aqueous solution, wherein the modification continues until a desired signal of the carbon region is reached. Other aspects are described and claimed.

A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

A method of a growing an embedded single crystal diamond structure, comprising: disposing a single crystal diamond on a non-diamond substrate, wherein the non-diamond substrate is larger than the single crystal diamond; masking a top portion of the single crystal diamond using a masking material; and using a chemical vapor deposition (CVD) growth chamber, growing polycrystalline diamond material surrounding the single crystal diamond in order to join the single crystal diamond to the polycrystalline diamond material.

An embodiment provides a method for modifying a carbon region on a boron-doped diamond electrode surface, comprising: placing a boron-doped diamond electrode surface in an aqueous solution, wherein the aqueous solution comprises an ionic treatment solution; applying a voltage difference across the boron-doped diamond electrode surface; and modifying a carbon region on an area of the boron-doped diamond electrode surface, wherein the modifying is responsive to application of the voltage while the boron-doped diamond electrode surface is in the aqueous solution, wherein the modification continues until a desired signal of the carbon region is reached. Other aspects are described and claimed.

An embodiment provides a method for modifying a carbon region on a boron-doped diamond electrode surface, comprising: placing a boron-doped diamond electrode surface in an aqueous solution, wherein the aqueous solution comprises an ionic treatment solution; applying a voltage difference across the boron-doped diamond electrode surface; and modifying a carbon region on an area of the boron-doped diamond electrode surface, wherein the modifying is responsive to application of the voltage while the boron-doped diamond electrode surface is in the aqueous solution, wherein the modification continues until a desired signal of the carbon region is reached. Other aspects are described and claimed.

The method is capable of effectively labeling the nanodiamonds with radioactive gallium and can be operated at room temperature, and therefore is convenient to operate and does not require further purification to obtain the nanodiamonds labelled with radioactive gallium with a purity of at least 99%