Provided is a surface-modified nanodiamond having excellent dispersibility in an organic solvent, and a method capable of introducing various surface-modifying groups and easily producing surface-modified nanocarbon particles with little zirconia contamination. The surface-modified nanodiamond includes nanodiamond particles and a group that surface-modifies the nanodiamond particles and is represented by Formula (1): —X—R.sup.1 (1) [where X represents —NH—, —O—, —O—C(═O)—, —C(═O)—O—, —NH—C(═O)—, —C(═O)—NH—, or —S—; the bond extending left from X is bonded to a nanodiamond particle; R.sup.1 represents a monovalent organic group that does not have a hydroxy group, carboxy group, amino group, mono-substituted amino group, terminal alkenyl group, and terminal epoxy group; an atom bound to X is a carbon atom; and a molar ratio of carbon atoms to the total amount of heteroatoms selected from the group consisting of nitrogen atoms, oxygen atoms, sulfur atoms, and silicon atoms is 4.5 or greater.

Provided is a surface-modified nanodiamond having excellent dispersibility in an organic solvent, and a method capable of introducing various surface-modifying groups and easily producing surface-modified nanocarbon particles with little zirconia contamination. The surface-modified nanodiamond includes nanodiamond particles and a group that surface-modifies the nanodiamond particles and is represented by Formula (1): —X—R.sup.1 (1) [where X represents —NH—, —O—, —O—C(═O)—, —C(═O)—O—, —NH—C(═O)—, —C(═O)—NH—, or —S—; the bond extending left from X is bonded to a nanodiamond particle; R.sup.1 represents a monovalent organic group that does not have a hydroxy group, carboxy group, amino group, mono-substituted amino group, terminal alkenyl group, and terminal epoxy group; an atom bound to X is a carbon atom; and a molar ratio of carbon atoms to the total amount of heteroatoms selected from the group consisting of nitrogen atoms, oxygen atoms, sulfur atoms, and silicon atoms is 4.5 or greater.

Methods for preparing a layered metal nanocomposite and a layered metal nanocomposite. The method includes mixing a magnesium salt and an aluminum salt to form a Mg.sup.2+/Al.sup.3+ solution. The Mg/Al has a molar ratio of between 0.5:1 to 6:1. Then a diamondoid compound is added to the Mg.sup.2+/Al.sup.3+ solution to form a reactant mixture. The diamondoid compound has at least one carboxylic acid moiety. The reactant mixture is heated at a reaction temperature for a reaction time to form a Mg/Al-diamondoid intercalated layered double hydroxide. The Mg/Al-diamondoid intercalated layered double hydroxide is thermally decomposed under a reducing atmosphere for a decomposition time at a decomposition temperature to form the layered metal nanocomposite.

Methods for preparing a layered metal nanocomposite and a layered metal nanocomposite. The method includes mixing a magnesium salt and an aluminum salt to form a Mg.sup.2+/Al.sup.3+ solution. The Mg/Al has a molar ratio of between 0.5:1 to 6:1. Then a diamondoid compound is added to the Mg.sup.2+/Al.sup.3+ solution to form a reactant mixture. The diamondoid compound has at least one carboxylic acid moiety. The reactant mixture is heated at a reaction temperature for a reaction time to form a Mg/Al-diamondoid intercalated layered double hydroxide. The Mg/Al-diamondoid intercalated layered double hydroxide is thermally decomposed under a reducing atmosphere for a decomposition time at a decomposition temperature to form the layered metal nanocomposite.

The present invention provides a nanocluster in which a carbon nanomaterial modified with a higher alkyl group or a higher alkenyl group is self-assembled.

The present invention provides a nanocluster in which a carbon nanomaterial modified with a higher alkyl group or a higher alkenyl group is self-assembled.

In an embodiment, a polycrystalline diamond table includes a plurality of bonded diamond grains and a plurality of interstitial regions defined by the plurality of bonded diamond grains. The polycrystalline diamond table may be at least partially leached such that at least a portion of at least one interstitial constituent has been removed from at least a portion of the plurality of interstitial regions by exposure to a leaching agent. The leaching agent may include a mixture having a ratio of weight % hydrofluoric acid to weight % nitric acid of about 1.0 to about 2.4, and water in a concentration of about 50 weight % to about 85 weight %. Various other materials, articles, and methods are also disclosed.

In an embodiment, a polycrystalline diamond table includes a plurality of bonded diamond grains and a plurality of interstitial regions defined by the plurality of bonded diamond grains. The polycrystalline diamond table may be at least partially leached such that at least a portion of at least one interstitial constituent has been removed from at least a portion of the plurality of interstitial regions by exposure to a leaching agent. The leaching agent may include a mixture having a ratio of weight % hydrofluoric acid to weight % nitric acid of about 1.0 to about 2.4, and water in a concentration of about 50 weight % to about 85 weight %. Various other materials, articles, and methods are also disclosed.

Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp.sup.3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.

Apparatuses and methods to manufacture integrated circuits are described. A method of forming film on a substrate is described. The film is formed on a substrate by exposing a substrate to a diamond-like carbon precursor having an sp.sup.3 content of greater than 40 percent. Methods of etching a substrate are described. Electronic devices comprising a diamond-like carbon film are also described.