C01B32/907

TWO-DIMENSIONAL, ORDERED, DOUBLE TRANSITION METALS CARBIDES HAVING A NOMINAL UNIT CELL COMPOSITION M'2M"NXN+1
20180108910 · 2018-04-19 ·

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

TWO-DIMENSIONAL, ORDERED, DOUBLE TRANSITION METALS CARBIDES HAVING A NOMINAL UNIT CELL COMPOSITION M'2M"NXN+1
20180108910 · 2018-04-19 ·

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

High purity polysilocarb materials, applications and processes

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

High purity polysilocarb materials, applications and processes

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

MXene compound having novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound

MXene compound having a novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound. The invention firstly relates to a MXene compound advantageously having a crystalline morphology that is mostly in tablet form which may be obtained from a MAX phase precursor obtained by spark plasma sintering process whereby the powders of the mixture are insulated, and to a process for fabricating the MXene compound. The invention also relates to compound of MAX phase type obtained by spark plasma sintering process whereby the powders of the mixture are insulated. The invention also relates to a synthesis process of an MXene compound from said precursor, and to the MXene compound thus obtained advantageously having a crystalline morphology that is mostly in tablet form.

MXene compound having novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound

MXene compound having a novel crystalline morphology, and process for fabricating a compound of MAX phase type for synthesis of said MXene compound. The invention firstly relates to a MXene compound advantageously having a crystalline morphology that is mostly in tablet form which may be obtained from a MAX phase precursor obtained by spark plasma sintering process whereby the powders of the mixture are insulated, and to a process for fabricating the MXene compound. The invention also relates to compound of MAX phase type obtained by spark plasma sintering process whereby the powders of the mixture are insulated. The invention also relates to a synthesis process of an MXene compound from said precursor, and to the MXene compound thus obtained advantageously having a crystalline morphology that is mostly in tablet form.

NOVEL COMPOSITE MATERIAL FOR SECONDARY LITHIUM BATTERY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
20240372075 · 2024-11-07 ·

A composite material for a secondary lithium battery comprises: nano-silicon and carbon atoms. The carbon atoms are uniformly distributed in the nano-silicon at an atomic level; the carbon atoms and silicon atoms are combined to form an amorphous SiC bond, and no SiC crystal peak exists in an X-ray diffraction (XRD) energy spectrum; in solid nuclear magnetic resonance (NMR) detection of the novel composite material, a .sup.29Si NMR chart shows that, when the silicon peak is between 70 ppm and 130 ppm, there is a SiC resonance peak between 20 ppm and 20 ppm; the area ratio of the SiC resonance peak to the silicon peak is (0.1, 5.0); the average particle size D50 of the novel composite material is 1 nm-50 m; the mass of the carbon atoms accounts for 0.5%-50% of the mass of the novel composite material.

NOVEL COMPOSITE MATERIAL FOR SECONDARY LITHIUM BATTERY, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
20240372075 · 2024-11-07 ·

A composite material for a secondary lithium battery comprises: nano-silicon and carbon atoms. The carbon atoms are uniformly distributed in the nano-silicon at an atomic level; the carbon atoms and silicon atoms are combined to form an amorphous SiC bond, and no SiC crystal peak exists in an X-ray diffraction (XRD) energy spectrum; in solid nuclear magnetic resonance (NMR) detection of the novel composite material, a .sup.29Si NMR chart shows that, when the silicon peak is between 70 ppm and 130 ppm, there is a SiC resonance peak between 20 ppm and 20 ppm; the area ratio of the SiC resonance peak to the silicon peak is (0.1, 5.0); the average particle size D50 of the novel composite material is 1 nm-50 m; the mass of the carbon atoms accounts for 0.5%-50% of the mass of the novel composite material.

TWO-DIMENSIONAL MXENE SURFACE-MODIFIED WITH METAL-ORGANIC NETWORK, METHOD OF PREPARING THE SAME, AND MXENE ORGANIC INK CONTAINING THE SAME

Disclosed in the present specification are a two-dimensional MXene surface-modified with a metal-organic network, a method of preparing the same, a MXene organic ink containing the same, and uses (e.g., an electromagnetic wave shielding material). In one aspect, the two-dimensional MXene surface-modified with a metal-organic network according to the present invention can use various organic ligands by linking the surface with the organic through the metal, and can be stably dispersed in various organic solvents, especially in industrial non-polar organic solvents as well as polar organic solvents, thereby being applied to a more general-purpose technologies, and securing stability against chemical oxidation to improve long-term stability.

TWO-DIMENSIONAL MXENE SURFACE-MODIFIED WITH METAL-ORGANIC NETWORK, METHOD OF PREPARING THE SAME, AND MXENE ORGANIC INK CONTAINING THE SAME

Disclosed in the present specification are a two-dimensional MXene surface-modified with a metal-organic network, a method of preparing the same, a MXene organic ink containing the same, and uses (e.g., an electromagnetic wave shielding material). In one aspect, the two-dimensional MXene surface-modified with a metal-organic network according to the present invention can use various organic ligands by linking the surface with the organic through the metal, and can be stably dispersed in various organic solvents, especially in industrial non-polar organic solvents as well as polar organic solvents, thereby being applied to a more general-purpose technologies, and securing stability against chemical oxidation to improve long-term stability.