Patent classifications
C01B32/907
Conductive two-dimensional particle-containing composition, conductive film, and method of producing conductive two-dimensional particle-containing composition
A conductive two-dimensional particle-containing composition including: a conductive two-dimensional particle of a layered material including one or a plurality of layers; a dispersion medium having a relative permittivity greater than that of water; and a fluorine element and an oxygen element on a surface of the conductive two-dimensional particle, wherein the one or plurality of layers includes a layer body represented by: M.sub.mX.sub.n, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is 1 to 4, and m is more than n and 5 or less, and a modifier or terminal T existing on a surface of the layer body, wherein T is at least one selected from the group consisting of a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.
Acoustic wave device with wurtzite based piezoelectric layer with high acoustic velocity
Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.
Acoustic wave device with wurtzite based piezoelectric layer with high acoustic velocity
Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.
Negative electrode material, and negative electrode plate, electrochemical device and electronic device including same
A negative electrode material, and a negative electrode plate, an electrochemical device, and an electronic device including the same. The negative electrode material includes SiM.sub.xC.sub.y, where 0.5x2, 0.5y4, and M includes at least one of boron, nitrogen, oxygen, or aluminum; for SiM.sub.xC.sub.y, a particle size at a quantity accumulation degree of A % is D.sub.NA, a particle size at a volume accumulation degree of B % is D.sub.VB, and a half-peak width of a quantity distribution curve is D.sub.N; and 2 m(D.sub.V50D.sub.N50)6 m, and 1(D.sub.N99D.sub.N1)/D.sub.N1.3. The use of the negative electrode material, and the negative electrode plate, the electrochemical device and the electronic device including the same according to the present application achieve good cycle performance and energy density.
Negative electrode material, and negative electrode plate, electrochemical device and electronic device including same
A negative electrode material, and a negative electrode plate, an electrochemical device, and an electronic device including the same. The negative electrode material includes SiM.sub.xC.sub.y, where 0.5x2, 0.5y4, and M includes at least one of boron, nitrogen, oxygen, or aluminum; for SiM.sub.xC.sub.y, a particle size at a quantity accumulation degree of A % is D.sub.NA, a particle size at a volume accumulation degree of B % is D.sub.VB, and a half-peak width of a quantity distribution curve is D.sub.N; and 2 m(D.sub.V50D.sub.N50)6 m, and 1(D.sub.N99D.sub.N1)/D.sub.N1.3. The use of the negative electrode material, and the negative electrode plate, the electrochemical device and the electronic device including the same according to the present application achieve good cycle performance and energy density.
Preparation method of Ti.SUB.3.C.SUB.2.T.SUB.X .MXene quantum dot (MQD)-modified polyamide (PA) reverse-osmosis (RO) membrane
The present disclosure belongs to the technical field of membrane separation, and discloses a preparation method of a Ti.sub.3C.sub.2T.sub.x MXene quantum dot (MQD)-modified polyamide (PA) reverse osmosis (RO) membrane. The preparation method includes the following steps: subjecting a Ti.sub.3C.sub.2T.sub.x MXene material to liquid nitrogen intercalation and interlayer expansion to obtain a Ti.sub.3C.sub.2T.sub.x MQD nanomaterial; preparing an aqueous phase solution with the Ti.sub.3C.sub.2T.sub.x MQD nanomaterial and an organic phase solution; soaking an ultrafiltration (UF) base membrane in the aqueous phase solution, and removing the aqueous phase solution on a surface of the UF base membrane through blow-drying; soaking the second UF base membrane in the organic phase solution to allow interfacial polymerization to form an active layer; and allowing a composite membrane obtained after the interfacial polymerization to stand, followed by a heat treatment to further promote the interfacial polymerization.
Preparation method of Ti.SUB.3.C.SUB.2.T.SUB.X .MXene quantum dot (MQD)-modified polyamide (PA) reverse-osmosis (RO) membrane
The present disclosure belongs to the technical field of membrane separation, and discloses a preparation method of a Ti.sub.3C.sub.2T.sub.x MXene quantum dot (MQD)-modified polyamide (PA) reverse osmosis (RO) membrane. The preparation method includes the following steps: subjecting a Ti.sub.3C.sub.2T.sub.x MXene material to liquid nitrogen intercalation and interlayer expansion to obtain a Ti.sub.3C.sub.2T.sub.x MQD nanomaterial; preparing an aqueous phase solution with the Ti.sub.3C.sub.2T.sub.x MQD nanomaterial and an organic phase solution; soaking an ultrafiltration (UF) base membrane in the aqueous phase solution, and removing the aqueous phase solution on a surface of the UF base membrane through blow-drying; soaking the second UF base membrane in the organic phase solution to allow interfacial polymerization to form an active layer; and allowing a composite membrane obtained after the interfacial polymerization to stand, followed by a heat treatment to further promote the interfacial polymerization.
Dispersion and stabilization of MXene materials and MXene materials for energy storage applications
Provided are methods of effecting cation exchange in MXene materials so as to stabilize the materials. Also provided are compositions, comprising layered MXene materials that comprise an organic cation between layers. Also provided are MXene compositions comprising a chalcogen disposed thereon, the MXene composition further optionally comprising a quaternary ammonium halide disposed thereon.
Dispersion and stabilization of MXene materials and MXene materials for energy storage applications
Provided are methods of effecting cation exchange in MXene materials so as to stabilize the materials. Also provided are compositions, comprising layered MXene materials that comprise an organic cation between layers. Also provided are MXene compositions comprising a chalcogen disposed thereon, the MXene composition further optionally comprising a quaternary ammonium halide disposed thereon.