To provide a rolling bearing having a hard film on an inner ring raceway surface and an outer ring raceway surface of the rolling bearing that improves peeling resistance of the hard film, shows the original property of the hard film, and suppresses the attackability to a mating material. A rolling bearing 1 has an inner ring 2 having an inner ring raceway surface 2a on an outer circumference, an outer ring 3 having an outer ring raceway surface 3a on an inner circumference, and rolling elements 4 that roll between the inner ring raceway surface 2a and the outer ring raceway surface 3a. A hard film 8 includes a foundation layer formed directly on the inner ring raceway surface 2a or the outer ring raceway surface 3a and mainly formed of Cr and WC, a mixed layer having a gradient composition formed on the foundation layer and mainly formed of WC and DLC, and a surface layer formed on the mixed layer and mainly formed of DLC. In a roughness curve of a surface on which the foundation layer is formed, the arithmetical mean roughness Ra is 0.3 μm or less and the root mean square gradient RΔq is 0.05 or less.

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

Aspects of this disclosure relate to an acoustic wave device with a piezoelectric layer that includes a wurtzite structure. The wurtzite structure can include a group 2 element and have a high acoustic velocity. For example, the wurtzite structure can include a carbide and the group 2 element can be carbon of the carbide. The high acoustic velocity can be over 10,000 meters per second. Related piezoelectric layers, acoustic wave filters, radio frequency modules, wireless communication devices, and methods are disclosed.

A method of producing hydrogen gas is provided. The method can include the steps of providing a reaction vessel containing aluminum, delivering a stream of natural gas to the reaction vessel, in which the natural gas includes methane, and heating the reaction vessel at a temperature in a range of 300 to 800° C., in which the heating causes a chemical reaction between the methane and the aluminum to provide hydrogen gas and aluminum carbide. The method can include delivering steam to the reaction vessel and heating the reaction vessel at a temperature in a range of 300 to 800° C., in which the heating causes a chemical reaction between the methane, steam, and the aluminum to provide hydrogen gas, aluminum carbide, and aluminum oxycarbide.

A method of producing hydrogen gas is provided. The method can include the steps of providing a reaction vessel containing aluminum, delivering a stream of natural gas to the reaction vessel, in which the natural gas includes methane, and heating the reaction vessel at a temperature in a range of 300 to 800° C., in which the heating causes a chemical reaction between the methane and the aluminum to provide hydrogen gas and aluminum carbide. The method can include delivering steam to the reaction vessel and heating the reaction vessel at a temperature in a range of 300 to 800° C., in which the heating causes a chemical reaction between the methane, steam, and the aluminum to provide hydrogen gas, aluminum carbide, and aluminum oxycarbide.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X)

##STR00001##

wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M′.sub.2M″nX.sub.n+1, such that each X is positioned within an octahedral array of M′ and M″; wherein M′ and M″ each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M′ atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M″ atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M″ atoms are sandwiched between the two-dimensional outer arrays of M′ atoms within the two-dimensional army of crystal cells.

Some examples of a method for manufacturing an electrode material for electrolytic hydrogen generation are described. Tungsten salt and nickel salt are mixed in a determined molar ratio on a carbon support by effectively controlling synthesis temperature and composition. Water and adsorbed oxygen, produced by mixing the tungsten salt and nickel salt are removed. Then, methane gas is flowed over the mixture resulting in the electrode material. The electrode material is suitable for use as a catalyst in electrolytic hydrogen generation processes, for example, at an industrial scale, to produce large quantities of hydrogen.