Some examples of a method for manufacturing an electrode material for electrolytic hydrogen generation are described. Tungsten salt and nickel salt are mixed in a determined molar ratio on a carbon support by effectively controlling synthesis temperature and composition. Water and adsorbed oxygen, produced by mixing the tungsten salt and nickel salt are removed. Then, methane gas is flowed over the mixture resulting in the electrode material. The electrode material is suitable for use as a catalyst in electrolytic hydrogen generation processes, for example, at an industrial scale, to produce large quantities of hydrogen.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) ##STR00001##
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R.sup.9, R.sup.10, R.sup.11, R.sup.12 R.sup.13, R.sup.14, R.sup.15, and R.sup.16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

A composition of matter defined by the general formula of M.sub.2+vL.sub.1−vX.sub.2, wherein: X is carbon; M represents a transition metal selected from the group consisting of Ti, Ta, Sc, Cr, Zr, Mo, V, and Nb; and L represents a lanthanide element selected from the group consisting of Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

A Composition of matter defined by the general formula of M1M2M3M4X.sub.3 wherein: X is carbon; and M1, M2, M3, and M4 each represent a different transition metal selected from the group consisting of Ti, Ta, Sc, Cr, Zr, Hf, Mo, V, and Nb.

A Composition of matter defined by the general formula of M1M2M3M4X.sub.3 wherein: X is carbon; and M1, M2, M3, and M4 each represent a different transition metal selected from the group consisting of Ti, Ta, Sc, Cr, Zr, Hf, Mo, V, and Nb.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

A method for manufacturing catalyst material is provided, which includes putting an M′ target and an M″ target into a nitrogen-containing atmosphere, in which M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof. Powers are provided to the M′ target and the M″ target, respectively. Providing ions to bombard the M′ target and the M″ target to sputtering deposit M′.sub.aM″.sub.bN.sub.2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2, wherein M′.sub.aM″.sub.bN.sub.2 is a cubic crystal system.

A method for manufacturing catalyst material is provided, which includes putting an M′ target and an M″ target into a nitrogen-containing atmosphere, in which M′ is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M″ is Nb, Ta, or a combination thereof. Powers are provided to the M′ target and the M″ target, respectively. Providing ions to bombard the M′ target and the M″ target to sputtering deposit M′.sub.aM″.sub.bN.sub.2 on a substrate, wherein 0.7≤a≤1.7, 0.3≤b≤1.3, and a+b=2, wherein M′.sub.aM″.sub.bN.sub.2 is a cubic crystal system.