A complex carbide for mining and mineral processing applications that are subject to severe additional metal, with the additional metal being a transition metal.

Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2MnX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional army of crystal cells,

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2MnX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group 11113, WE, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional army of crystal cells,

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

The present disclosure is directed to compositions comprising at least one layer having first and second surfaces, each layer comprising: a substantially two-dimensional array of crystal cells, each crystal cell having an empirical formula of M.sub.2M.sub.nX.sub.n+1, such that each X is positioned within an octahedral array of M and M; wherein M and M each comprise different Group IIIB, IVB, VB, or VIB metals; each X is C, N, or a combination thereof; n=1 or 2; and wherein the M atoms are substantially present as two-dimensional outer arrays of atoms within the two-dimensional array of crystal cells; the M atoms are substantially present as two-dimensional inner arrays of atoms within the two-dimensional array of crystal cells; and the two dimensional inner arrays of M atoms are sandwiched between the two-dimensional outer arrays of M atoms within the two-dimensional array of crystal cells.

A method according to an embodiment of the present invention is for preparing powdered composite carbide of tungsten and titanium in which tungsten trioxide (WO.sub.3), titanium dioxide (TiO.sub.2) and carbon (C), each being in powdered form are mixed with a reducing agent powder to obtain a reaction mixture in the mixing step, followed by the synthesis step in which the reaction mixture is heated at a temperature of about 600 C. to 1200 C. to obtain the reaction products, and the washing step in which the reaction products are washed with water. The method for preparing tungsten titanium carbide powder is capable of carrying out both reduction and carburizing at a relatively low temperature and affords homogeneity in shape and particle size in the resultant composite carbide.

A method according to an embodiment of the present invention is for preparing powdered composite carbide of tungsten and titanium in which tungsten trioxide (WO.sub.3), titanium dioxide (TiO.sub.2) and carbon (C), each being in powdered form are mixed with a reducing agent powder to obtain a reaction mixture in the mixing step, followed by the synthesis step in which the reaction mixture is heated at a temperature of about 600 C. to 1200 C. to obtain the reaction products, and the washing step in which the reaction products are washed with water. The method for preparing tungsten titanium carbide powder is capable of carrying out both reduction and carburizing at a relatively low temperature and affords homogeneity in shape and particle size in the resultant composite carbide.

A method for manufacturing catalyst material is provided, which includes putting an M target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M is Nb, Ta, or a combination thereof. Powers are provided to the M target and the M target, respectively. Providing ions to bombard the M target and the M target to sputtering deposit M.sub.aM.sub.bN.sub.2 on a substrate, wherein 0.7a1.7, 0.3b1.3, and a+b=2, wherein M.sub.aM.sub.bN.sub.2 is a cubic crystal system.

A method for manufacturing catalyst material is provided, which includes putting an M target and an M target into a nitrogen-containing atmosphere, in which M is Ni, Co, Fe, Mn, Cr, V, Ti, Cu, or Zn, and M is Nb, Ta, or a combination thereof. Powers are provided to the M target and the M target, respectively. Providing ions to bombard the M target and the M target to sputtering deposit M.sub.aM.sub.bN.sub.2 on a substrate, wherein 0.7a1.7, 0.3b1.3, and a+b=2, wherein M.sub.aM.sub.bN.sub.2 is a cubic crystal system.