Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.

A SiOC composite material in microparticulate form, wherein the microparticles are formed, in whole or in part, of an amorphous SiOC matrix with Si ranging from 20 wt % to 60 wt %, O from 20 wt % to 40 wt % and C from 10 wt % to 50 wt %, based on the total weight of the SiOC matrix, wherein amorphous or crystallized silicon particles are embedded within the SiOC matrix and wherein the microparticles are of core/coating structure with a core formed of the amorphous SiOC matrix and coated with at least one amorphous carbon layer; and to a method for producing such SiOC composite material. It also relates to an electrode active material, an electrode and a battery, especially a lithium-ion battery, including the aforementioned SiOC composite material.

A SiOC composite material in microparticulate form, wherein the microparticles are formed, in whole or in part, of an amorphous SiOC matrix with Si ranging from 20 wt % to 60 wt %, O from 20 wt % to 40 wt % and C from 10 wt % to 50 wt %, based on the total weight of the SiOC matrix, wherein amorphous or crystallized silicon particles are embedded within the SiOC matrix and wherein the microparticles are of core/coating structure with a core formed of the amorphous SiOC matrix and coated with at least one amorphous carbon layer; and to a method for producing such SiOC composite material. It also relates to an electrode active material, an electrode and a battery, especially a lithium-ion battery, including the aforementioned SiOC composite material.

A material for a negative electrode active material having capability of achieving excellent cycle performance while maintaining satisfactory initial efficiency (initial capacity), a production method for the material, a composition for a negative electrode, using the material, a negative electrode, and a secondary battery. A core-shell structure that includes the following components (A) and (B), and satisfies the following conditions (i) and (ii): (A): a core containing at least Si (silicon), O (oxygen) and C (carbon) as a constituent element, and containing crystalline carbon and non-crystalline carbon as a constituent; and (B): a shell involving the core, and including a SiOC structure having a graphene layer, and (i): having an atomic composition represented by formula SiO.sub.xC.sub.y (0.5<x<1.8, 1.0<y<5.0), and (ii): having a predetermined value of less than 1.010.sup.5 .Math.cm in specific resistance determined by powder resistance measurement.

The present invention discloses a preparation method of a sulfonated two-dimensional titanium carbide nanosheet, which comprises the following steps of preparing two-dimensional titanium carbide by using aluminum atomic layers in hydrofluoric acid chemical stripping layer-shaped titanium aluminum carbide; preparing sulfanilic acid diazosalt; conducting a sulfonation reaction between the two-dimensional titanium carbide and the sulfanilic acid diazosalt to prepare the sulfonated two-dimensional titanium carbide nanosheet. The sulfonated two-dimensional titanium carbide nano material prepared through the present invention has good dispersity in water and common organic solvents, and a single-layer or few-layer sulfonated two-dimensional titanium carbide nanosheet with large size and high quality can be obtained after ultrasonic treatment is performed on a dispersion liquid. The preparation method has the characteristics of low production cost, easiness in obtaining raw materials, and simplicity and controllability during preparation.

Some examples of a method for manufacturing an electrode material for electrolytic hydrogen generation are described. Tungsten salt and nickel salt are mixed in a determined molar ratio on a carbon support by effectively controlling synthesis temperature and composition. Water and adsorbed oxygen, produced by mixing the tungsten salt and nickel salt are removed. Then, methane gas is flowed over the mixture resulting in the electrode material. The electrode material is suitable for use as a catalyst in electrolytic hydrogen generation processes, for example, at an industrial scale, to produce large quantities of hydrogen.

Some examples of a method for manufacturing an electrode material for electrolytic hydrogen generation are described. Tungsten salt and nickel salt are mixed in a determined molar ratio on a carbon support by effectively controlling synthesis temperature and composition. Water and adsorbed oxygen, produced by mixing the tungsten salt and nickel salt are removed. Then, methane gas is flowed over the mixture resulting in the electrode material. The electrode material is suitable for use as a catalyst in electrolytic hydrogen generation processes, for example, at an industrial scale, to produce large quantities of hydrogen.

Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.