Crystalline material, phototransistor, and methods of fabrication thereof. The crystalline material comprising a plurality of stacked two-dimensional black phosphorous carbide layers.

Crystalline material, phototransistor, and methods of fabrication thereof. The crystalline material comprising a plurality of stacked two-dimensional black phosphorous carbide layers.

A method for producing a metal nitride and/or a metal carbide, a metal nitride and/or metal carbide optionally produced according to the method, and the use of the metal nitride and/or carbide in catalysis optionally catalytic hydroprocessing. Optionally, the method comprises: i) contacting at least one metal oxide comprising at least one first metal M.sup.1 with a cyanometallate comprising at least one second metal M.sup.2 to form a reaction mixture; and, ii) subjecting the reaction mixture to a temperature of at least 300° C. for a reaction period. Optionally, the metal nitride and/or metal carbide is a metal nitride comprising tungsten nitride.

A method for producing a metal nitride and/or a metal carbide, a metal nitride and/or metal carbide optionally produced according to the method, and the use of the metal nitride and/or carbide in catalysis optionally catalytic hydroprocessing. Optionally, the method comprises: i) contacting at least one metal oxide comprising at least one first metal M.sup.1 with a cyanometallate comprising at least one second metal M.sup.2 to form a reaction mixture; and, ii) subjecting the reaction mixture to a temperature of at least 300° C. for a reaction period. Optionally, the metal nitride and/or metal carbide is a metal nitride comprising tungsten nitride.

The present invention relates to aqueous suspensions containing 30 to 95 wt.-% metal carbide particles and a dispersant, and to a process for coating substrates using said aqueous suspensions. The invention also relates to the coated substrates that can be produced by the process according to the invention and to the uses thereof.

Out of sintered metal carbides having an extremely high melting point, there is provided a sintered metal carbide which can be produced without having to perform sintering under high pressure such as hot pressing or HIP, having a high relative density and excellent mechanical strength. A sintered metal carbide of at least one metal selected from the group consisting of elements of Groups 4 and 5 of the periodic table, wherein the sintered metal carbide contains Si element of 0.1 wtppm or more and 10,000 wtppm or less.

Out of sintered metal carbides having an extremely high melting point, there is provided a sintered metal carbide which can be produced without having to perform sintering under high pressure such as hot pressing or HIP, having a high relative density and excellent mechanical strength. A sintered metal carbide of at least one metal selected from the group consisting of elements of Groups 4 and 5 of the periodic table, wherein the sintered metal carbide contains Si element of 0.1 wtppm or more and 10,000 wtppm or less.

A manganese carbide (Mn.sub.4C) magnetic material and a production method therefor are provided. According to one embodiment, the saturation magnetization of the Mn.sub.4C magnetic material increases with increasing temperature, and thus the Mn.sub.4C magnetic material is applicable to fields in which thermally induced magnetization reduction is critical.

A manganese carbide (Mn.sub.4C) magnetic material and a production method therefor are provided. According to one embodiment, the saturation magnetization of the Mn.sub.4C magnetic material increases with increasing temperature, and thus the Mn.sub.4C magnetic material is applicable to fields in which thermally induced magnetization reduction is critical.

A manganese carbide (Mn.sub.4C) magnetic material and a production method therefor are provided. According to one embodiment, the saturation magnetization of the Mn.sub.4C magnetic material increases with increasing temperature, and thus the Mn.sub.4C magnetic material is applicable to fields in which thermally induced magnetization reduction is critical.