Provided is a composite anode active material including: a carbonaceous material; a metal alloyable with lithium, located on a surface of the carbonaceous material; and a silicon coating layer located on a surface of the carbonaceous material, on a surface of the metal alloyable with lithium, or a combination thereof.

A method and apparatus for preparing a composite, in which the angle between the apparatus base and the apparatus body is adjusted by the elevator device, the solid raw material is loaded into the reactor by the solid feeding device, the main reaction gas, the auxiliary gas and the carrier gas are introduced from the front gas intake unit into the main reaction zone at a preset ratio, followed by the active material deposited on solid particles, the post-processing reaction gas is introduced from the middle gas intake unit to the post-processing reaction zone to form a functional layer on the active material, the prepared composite powder is separated and collected from the gas-solid mixture in the collection device. The exhaust gas is released from the exhaust manifold into an exhaust gas treatment system after minority powder filtered by the filter.

A method and apparatus for preparing a composite, in which the angle between the apparatus base and the apparatus body is adjusted by the elevator device, the solid raw material is loaded into the reactor by the solid feeding device, the main reaction gas, the auxiliary gas and the carrier gas are introduced from the front gas intake unit into the main reaction zone at a preset ratio, followed by the active material deposited on solid particles, the post-processing reaction gas is introduced from the middle gas intake unit to the post-processing reaction zone to form a functional layer on the active material, the prepared composite powder is separated and collected from the gas-solid mixture in the collection device. The exhaust gas is released from the exhaust manifold into an exhaust gas treatment system after minority powder filtered by the filter.

A method for forming a porous silicon material can include forming a mixture of silicon, carbon, and an etchant element, solidifying the mixture, removing the etchant element to form pores within the silicon material. The porous silicon material can include a distribution of pores with an average pore diameter between about 10 nm and 500 nm, wherein the silicon particle comprises a silicon carbon composite comprising 1-5% carbon by mass, 1-5% oxygen by mass, and 90-98% silicon by mass.

A manufacturing system and method for recycling and smelting crushed silica from silicon plants, including a crushed silica storage device, granulator, submerged arc furnace, transfer device, forming device and cooling system. Firstly silicon waste is collected, then crushed silica is output to a granulator. The granulator mixes the waste irregular crushed silica with water, and granulates and produces small particles having an uniform grain size as the raw material for smelting. The raw material is smelted in the submerged arc furnace. The forming device evenly pours the silicon liquid into the cooling system according to a set flow rate. The silicon liquid is solidified to form silicon pellets, and then a lift system is used to lift the formed silicon pellets, wherein the silicon liquid poured into the cooling system has a uniform diameter. The system can rapidly and efficiently smelt the silicon waste from the silicon plants.

A manufacturing system and method for recycling and smelting crushed silica from silicon plants, including a crushed silica storage device, granulator, submerged arc furnace, transfer device, forming device and cooling system. Firstly silicon waste is collected, then crushed silica is output to a granulator. The granulator mixes the waste irregular crushed silica with water, and granulates and produces small particles having an uniform grain size as the raw material for smelting. The raw material is smelted in the submerged arc furnace. The forming device evenly pours the silicon liquid into the cooling system according to a set flow rate. The silicon liquid is solidified to form silicon pellets, and then a lift system is used to lift the formed silicon pellets, wherein the silicon liquid poured into the cooling system has a uniform diameter. The system can rapidly and efficiently smelt the silicon waste from the silicon plants.

An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.

A silicon-carbon composite material includes a matrix core, a silicon-carbon composite shell formed by uniformly dispersing nano silicon particles in conductive carbon, and a coating layer. The nano silicon particles are formed by high-temperature pyrolysis of a silicon source, and the conductive carbon is formed by high-temperature pyrolysis of an organic carbon source. The coating layer is a carbon coating layer including at least one layer, and the thickness of its single layer is 0.2-3 μm. A silicon-carbon composite material precursor is formed by simultaneous vapor deposition and is then subjected to carbon coating to form the pitaya-like silicon-carbon composite material which has advantages of high first-cycle efficiency, low expansion and long cycle. The grain growth of the silicon material is slowed down during the heat treatment process, the pulverization of the material is effectively avoided, and the cycle performance, conductivity and rate performance of the material are enhanced.