A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.

A process for for producing or preparing chlorosilanes. The process includes providing chlorosilanes having the general formula H.sub.nSiCl.sub.4-n wherein n is from 1 to 3. Once provided, the chlorosilanes are placed into a fluidized bed reactor where a hydrogen and silicon tetrachloride-containing reaction gas is reacted with a particulate contact mass containing silicon at temperatures of 350° C. to 800° C. The operating granulation is understood as meaning the granulation or granulation mixture introduced into the fluidized bed reactor contains at least 1% by mass of silicon-containing particles S described by a structural parameter S. Where the S has a value of at least 0 and is calculated as follows S=(φ.sub.S−0.70).Math.ρ.sub.SD/ρ.sub.F where φ.sub.S is a symmetry-weighted sphericity factor; the ρ.sub.SD is a poured density [g/cm.sup.3], and the ρ.sub.F is an average particle solids density [g/cm.sup.3].

Compositions suitable for reversibly storing heat in thermal energy systems (TES) include a salt hydrate represented by the formula: MX.sub.q.nH.sub.2O. M is a cation selected from Groups 1 to 14 of the IUPAC Periodic Table, X is a halide of Group 17, q ranges from 1 to 4, and n ranges from 1 to 12. The cation (M) may have an electronegativity of ≤ about 1.8 and a molar mass ≤ about 28 g/mol. The anion (X) may have an electronegativity of ≥ about 2.9 to ≤ about 3.2. A distance between a cation (M) and coordinating water molecules (H.sub.2O) is ≤ about 2.1 Å. Thermal energy systems (TES) incorporating such compositions are also provided that are configured to reversibly store heat in the thermal energy system (TES) via an endothermic dehydration reaction and to release heat in in the thermal energy system (TES) via an exothermic hydration reaction.

Erosion, caused by deposition of aluminum chloride, of the inner surface of a side wall of a pipe is reduced. A trichlorosilane production method includes a distillation step (S3) in which a discharge liquid (10) discharged from a distillation column (4) is caused to flow through an inner space (19) of a second pipe (100) having a side wall (12) of which the inner surface (15) is covered with a ceramic layer (13), so that the discharge liquid (10) is recovered from the distillation column (4).

The present disclosure relates to a process for producing chlorosilanes by reaction of a reaction gas containing hydrogen, tetrachlorosilane and optionally at least one further chlorosilane in a reactor and optionally in the presence of a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4-n, and the reactor design is described by an index K1, the composition of the reaction gas before entry into the reactor is described by an index K2, and the reaction conditions are described by an index K3.

A polymer handling method for a polycrystalline silicon manufacturing device, wherein the polymer byproducts are treated in a manner that the silicon polymers are hydrolyzed. The method creates a heated treatment gas with a moisture content that both treats the polymer to a depth of about 0.25 mm to prohibit formation of the friction and shock sensitive layer near the polymer surface and keeps the hydrolyzed polymer humidified. Furthermore the polymer handling method includes inactivation of the polymer, removal of the polymer of the system and disposal of the polymer after removal.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reaction of a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4−n and/or H.sub.mCl.sub.6−mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass is described by an index K2 and the reaction conditions are described by an index K3.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reaction of a hydrogen and silicon tetrachloride-containing reaction gas with a particulate contact mass containing silicon and a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4−n and/or H.sub.mCl.sub.6−mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass is described by an index K2 and the reaction conditions are described by an index K3.

A method for producing purified chlorosilanes includes bringing crude chlorosilanes, such as crude trichlorosilane and crude silicon tetrachloride, which contain a boron compound and/or a phosphorus compound, into contact with chlorine (preferably 1 ppm mole to 3000 ppm mole with respect to 1 mole of crude chlorosilanes) in presence of alkylphenol such as 2-methylphenol, and then distilling the crude chlorosilanes.

When producing chlorosilanes by a reaction between metallic silicon and hydrogen chloride, as the above metallic silicon, a metallic silicon powder having an oil adhering amount of 5 ppmw or less is subjected to the reaction as the metallic silicon.