Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700 C., b) directing metallurgical silicon in which the free carbon proportion is 150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes.

As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

Metallurgical silicon containing impurities of carbon and/or carbon-containing compounds is classified and subsequently used selectively for chlorosilane production. The process comprises the steps of: a) determining the free carbon proportion which reacts with oxygen up to a temperature of 700 C., b) directing metallurgical silicon in which the free carbon proportion is 150 ppmw to a process for producing chlorosilanes and/or directing metallurgical silicon in which the free carbon proportion is >150 ppmw to a process for producing methylchlorosilanes.

As a result of the process, metallurgical silicon having a total carbon content of up to 2500 ppmw can be used for producing chlorosilanes.

Provided is a fluidized bed reactor (1) that makes it possible to stably measure a temperature distribution in the fluidized bed reactor (1) while no damage is caused to a temperature measuring section. Provided is a fluidized bed reactor (1) configured to generate trichlorosilane by reacting metallurgical grade silicon powder and hydrogen chloride gas, the fluidized bed reactor (1) including: a reaction vessel (10); and a plurality of temperature measuring sections (50), provided on an outer surface of the reaction vessel (10), each for measuring a temperature inside the reaction vessel (10).

Provided is a fluidized bed reactor (1) that makes it possible to stably measure a temperature distribution in the fluidized bed reactor (1) while no damage is caused to a temperature measuring section. Provided is a fluidized bed reactor (1) configured to generate trichlorosilane by reacting metallurgical grade silicon powder and hydrogen chloride gas, the fluidized bed reactor (1) including: a reaction vessel (10); and a plurality of temperature measuring sections (50), provided on an outer surface of the reaction vessel (10), each for measuring a temperature inside the reaction vessel (10).

A silicon granule, in particular, for the preparation of trichlorosilane, having a size of between 10 and 500 microns, and comprising: dopants in a weight fraction of less than 5 ppm; at least one co-catalyst selected from copper, iron, aluminum and calcium, in a weight fraction of between 1 and 2500 ppm; and metallic impurities, with exclusion of the at least one co-catalyst, in a weight fraction of less than 50 ppm.

Methods of synthesizing SiH containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

Methods of synthesizing SiH containing iodosilanes, such as diiodosilane or pentaiododisilane, using a halide exchange reaction are disclosed.

The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120 C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula Si.sub.6R.sub.12, by reacting [X].sub.2[Si.sub.6Cl.sub.14] with AlR.sub.3 in at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(H.sub.2SiCl)]+.

The present invention relates to a process for the production of perhalogenated hexasilane anion by reacting halogenated monosilane in the presence of organosubstituted ammonium and/or phosphonium halide at temperatures in a range from 100 to 120 C., wherein no solvent is used, and a process for the production of a cyclic silane compound of the formula Si.sub.6R.sub.12, by reacting [X].sub.2[Si.sub.6Cl.sub.14] with AlR.sub.3 in at least one organic solvent, wherein R is chlorine or methyl and X, the same or different, is a counter-cation and is preferably selected from organosubstituted ammonium, organosubstituted phosphonium, alkali metal ions and [(PEDETA)(H.sub.2SiCl)]+.

A method of preparing pentachlorodisilane is disclosed. The method comprises partially reducing hexachlorodisilane with a metal hydride compound to give a reaction product comprising pentachlorodisilane. The method further comprises purifying the reaction product to give a purified reaction product comprising the pentachlorodisilane. The purified reaction product comprising pentachlorodisilane formed in accordance with the method is also disclosed.