Realized is a residue disposal method which makes it possible to efficiently dispose of a residue without causing blockage in a pipe and possible to recover a chlorosilane compound at a higher recovery rate. The present invention is an invention of a residue disposal method of disposing of a residue which is discharged in a reaction product gas processing step included in a trichlorosilane producing method, the residue disposal method including (i) drying the residue so that the residue contains a chlorosilane compound in an amount of not more than 10% by mass and (ii) obtaining a powdered residue.

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

A susceptor arrangement for a reactor includes a heater element configured to heat a process gas to be used in the reactor. Also included is an inner susceptor portion located radially inwardly of the heater element and configured to route the process gas therein along a radially inner process gas path. Further included is an outer susceptor portion located radially outwardly of the heater element and configured to route the process gas therein along a radially outer process gas path, wherein the radially inner process gas path and the radially outer process gas path are fluidly coupled and substantially fluidly isolated from the heater element.

The invention relates generally to heaters and methods of using the heaters. In certain embodiments, a heater includes a pressure shell having a cylindrical heating cavity, an annular heat shield disposed within the cylindrical heating cavity, and at least one heating element disposed within an interior volume of the annular heat shield. In another embodiment, a method of preparing a trichlorosilane includes introducing a reactant stream comprising silicon tetrachloride into a heater, passing electrical current through a heating element to heat the reactant stream, and introducing the heated reactant stream into a reactor.

A method and system for selectively recovering monochlorosilane and dichlorosilane from polysilicon production process are provided. The system and method selectively recover the monochlorosilane and the dichlorosilane contained in an exhaust stream discharged from a chemical vapor deposition unit for a polysilicon production process and the monochlorosilanes and the dichlorosilanes may be obtained with minimal capital investment or complexity.

The present invention relates to an apparatus for producing trichlorosilane from tetrachlorosilane in an efficient manner. The apparatus includes an inlet through which reaction raw materials including a metal silicon powder dispersed in liquid tetrachlorosilane enter, a hole through which a gaseous reaction raw material is fed, an outlet through which reaction products including trichlorosilane exit, a tubular reactor in which the reaction raw materials entering through the inlet react with each other during flow, and means for impeding the flow of the fluids to cause collision of the fluids during flow.

Separation of chlorosilane mixtures containing boron, arsenic, and/or phosphorus impurities is facilitated by a distillative separation using at least one divided column, with recycle streams to a first column being passed through an external absorbent for the impurities.

[Problem] To provide a novel production method for pentachlorodisilane and to obtain pentachlorodisilane having a purity of 90 mass % or more by carrying out this production method. [Solution] A production method provided with: a high-temperature reaction step in which a raw material gas containing vaporized tetrachlorosilane and hydrogen is reacted at a high temperature in order to obtain a reaction product gas containing trichlorosilane; a pentachlorodisilane generation step in which the reaction product gas obtained in the high-temperature reaction step is brought into contact with a cooling liquid obtained by circulative cooling of a condensate that is generated by cooling the reaction product gas, the reaction product gas is quickly cooled, and pentachlorodisilane is generated within the condensate; and a recovery step in which the generated pentachlorodisilane is recovered.