A process for preparing a product including a monohydrogentrihalosilane is disclosed. The process includes the steps of: 1) initially charging a reactor with a contact mass including both fresh silicon and recycled contact mass, where the recycled contact mass is obtained from during or after a production phase of an inorganic Direct Process reaction for production of a monohydrogentrihalosilane; and thereafter 2) feeding to the reactor a hydrogen halide and additional fresh silicon, thereby forming the product.

The invention relates to a process for converting silicon tetrachloride (STC) to trichlorosilane (TCS), by introducing reactant gas containing STC and hydrogen into a reaction zone of a reactor in which the temperature is 1000-1600° C., wherein the reaction zone is heated by a heater located outside the reaction zone and the product gas containing TCS which forms is then cooled, with the proviso that it is cooled to a temperature of 700-900° C. within 0.1-35 ms, wherein the reactant gas is heated by the product gas by means of a heat exchanger working in countercurrent, wherein reactor and heat exchanger form a single, gas-tight component, wherein the component includes one or more ceramic materials selected from the group consisting of silicon carbide, silicon nitride, graphite, SiC-coated graphite and quartz glass.

A process for preparing a reaction product including a halosilane includes: contacting an unsaturated hydrocarbyl halide and a ternary intermetallic compound at a temperature of 300° C. to 700° C. to form the reaction product. The ternary intermetallic compound includes copper, silicon and a transition metal. The halosilane in the reaction product has formula R1.sub.mR.sup.2.sub.n—H.sub.oSiX.sub.(4-m-n-o)> where each R.sup.1 is independently a saturated monovalent hydrocarbyl group, each R.sup.2 is independently an unsaturated monovalent hydrocarbyl group; each X is independently a halogen atom; subscript m is 1, 2, or 3; subscript n is 0, 1, or 2; subscript o is 0, 1, or 2; and a quantity (m+n+o) is 1, 2, or 3. At least a portion of the unsaturated hydrocarbyl groups in the unsaturated by drocarbyl halide are converted to saturated hydrocarbyl groups (R.sup.1) in the halosilane.

A process for preparing a reaction product including a halosilane includes: contacting an unsaturated hydrocarbyl halide and a ternary intermetallic compound at a temperature of 300° C. to 700° C. to form the reaction product. The ternary intermetallic compound includes copper, silicon and a transition metal. The halosilane in the reaction product has formula R1.sub.mR.sup.2.sub.n—H.sub.oSiX.sub.(4-m-n-o)> where each R.sup.1 is independently a saturated monovalent hydrocarbyl group, each R.sup.2 is independently an unsaturated monovalent hydrocarbyl group; each X is independently a halogen atom; subscript m is 1, 2, or 3; subscript n is 0, 1, or 2; subscript o is 0, 1, or 2; and a quantity (m+n+o) is 1, 2, or 3. At least a portion of the unsaturated hydrocarbyl groups in the unsaturated by drocarbyl halide are converted to saturated hydrocarbyl groups (R.sup.1) in the halosilane.

1. The present invention relates to a method for the purification of halogenated oligosilanes as a pure compound or mixture of compounds each having at least one direct Si—Si bond, the substituents thereof being exclusively halogen or halogen and hydrogen, and the composition thereof being an atom ratio of substituent:silicon of at least 3:2, by the action of at least one purification agent on the halogenated oligosilane and isolation of the halogenated oligosilane with improved purity.

2.1. In the prior art, halogenated monosilanes such as HSiCl.sub.3 are purified by treatment with preferably polymeric organic compounds containing amino groups, and are separated out from these mixtures. This method cannot be used for halogenated oligosilanes because of the contained amino groups, since secondary reactions would lead to decomposition of the products. The new method should provide the desired products in high yield and purity without amino groups being used.

2.2. The purification of the halogenated oligosilanes is carried out in the presence of special purification agents, which convert contaminations such as, for example, FeCl.sub.2 into an insoluble and/or less volatile form. A separation of the products of completes the purification This method gives a high yield and avoids the problems associated with the prior art, such as, for example, long distillation times.

2.3. The method is suitable for the purification of, for example, Si.sub.2Cl.sub.6, Si.sub.3Cl.sub.8, Si.sub.4Cl.sub.10, and higher homologs. These find application, for example, in the deposition of silicon nitride layers in CVD processes.

The invention relates to a process for preparing higher halosilanes by disproportionation of lower halosilanes. The invention further relates to a process for preparing higher hydridosilanes from the higher halosilanes prepared by disproportionation. The invention further relates to mixtures containing at least one higher halosilane or at least one higher hydridosilane prepared by the process described. Finally, the invention relates to the use of such a mixture containing at least one higher hydridosilane for producing electronic or optoelectronic component layers or for producing silicon-containing layers.

An object of the present invention is to prevent stress-corrosion cracking of a header (40) of a reactor. A reactor for producing trichlorosilane by causing metal silicon powder and a hydrogen chloride gas to react with each other includes a cooler (70), the cooler including a plurality of heat transfer medium pipes (30) and a header (40), the plurality of heat transfer medium pipes being provided in a fluid bed (60) inside the reactor, the header being provided in a freeboard section (50) inside the reactor, the header being comprised of a corrosion-resistant material.

An object of the present invention is to prevent stress-corrosion cracking of a header (40) of a reactor. A reactor for producing trichlorosilane by causing metal silicon powder and a hydrogen chloride gas to react with each other includes a cooler (70), the cooler including a plurality of heat transfer medium pipes (30) and a header (40), the plurality of heat transfer medium pipes being provided in a fluid bed (60) inside the reactor, the header being provided in a freeboard section (50) inside the reactor, the header being comprised of a corrosion-resistant material.

Methods and apparatus to generate carbon nanostructures from organic materials are described. Certain embodiments provide solid waste materials into a furnace, that pyrolyzes the solid waste materials into gaseous decomposition products, which are then converted to carbon nanostructures. Methods and apparatuses described herein provide numerous advantages over conventional methods, such as cost savings, reduction of handling risks, optimization of process conditions, and the like.

Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF.sub.3, SiF.sub.4, GeF.sub.4, PF.sub.5 or AsF.sub.5 at a reduced production cost in a simple manner. The process is characterized in that a compound containing an atom, which, together with a fluorine atom, can form a polyatomic ion, is added to a hydrogen fluoride solution to produce the polyatomic ion in a hydrogen fluoride solution and to evolve a fluoride gas comprising the fluorine atom and the atom that, together with the fluorine atom, can form a polyatomic ion.