An apparatus for producing trichlorosilane in which metallurgical grade silicon powder supplied to a reactor is reacted with hydrogen chloride gas while being fluidized by the hydrogen chloride gas, thereby discharging trichlorosilane generated by the reaction from the reactor, includes: a plurality of gas flow controlling members which are installed along a vertical direction in an annular shape R from an inner peripheral wall of the reactor in an internal space of the reactor; and a heat transfer tube which is installed along the vertical direction in the annular space R and through which a heating medium passes.

By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.

By incorporating an additional TCS and/or DCS redistribution reactor in the TCS recycle loop and/or DCS recycle loop, respectively, of a process and system for silane manufacture, efficiencies in the production of silane are realized.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reacting a hydrogen chloride-containing reaction gas with a particulate contact mass containing silicon and optionally a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4-n and/or H.sub.mCl.sub.6-mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass without catalyst is described by an index K2.sub.uncat, the constitution of the contact mass with catalyst is described by an index K2.sub.cat, and the reaction conditions are described by an index K3.

The present disclosure relates to a process for producing chlorosilanes in a fluidized bed reactor by reacting a hydrogen chloride-containing reaction gas with a particulate contact mass containing silicon and optionally a catalyst. The chlorosilanes have the general formula H.sub.nSiCl.sub.4-n and/or H.sub.mCl.sub.6-mSi.sub.2. The reactor design is described by an index K1, the constitution of the contact mass without catalyst is described by an index K2.sub.uncat, the constitution of the contact mass with catalyst is described by an index K2.sub.cat, and the reaction conditions are described by an index K3.

The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.

The invention relates to a process for converting polychlorosilanes into hexachlorodisilane, by one or more trimeric polychlorosilanes or a trimeric polychlorosilane in a mixture with higher molecular weight polychlorosilanes being exposed to a gas discharge and hexachlorodisilane being formed and isolated.

The present invention relates to internals useful for minimizing bubble size in a bubbling fluidized bed reactor. One use for the invention is in an apparatus and method for producing trichlorosilane in which metallurgical grade silicon is reacted with hydrogen chloride gas and while being fluidized by the hydrogen chloride gas, thereby producing trichlorosilane.

Chlorosilanes and methods of producing chlorosilanes. The process for producing chlorosilanes includes the step of selecting a chlorosilane having a general formulae (1) H.sub.nSiCl.sub.4-n and (2) H.sub.mCl.sub.6-mSi.sub.2 wherein n is 0 to 3 and m is from 0 to 4. The chlorosilane selected is then placed within a fluidized bed reactor. A hydrogen chloride-containing reaction gas is reacted with a particulate contact mass containing silicon at temperatures of 280° C. to 400° C. Where the operating granulation, understood as meaning the granulation or granulation mixture introduced into the fluidized bed reactor, contains at least 1% by mass of silicon-containing particles S described by a structural parameter S and wherein S has a value of at least 0 and is calculated as follows

[00001]$S=\left({\phi }_s-0.70\right).Math.\frac{{\rho }_{SD}}{{\rho }_F}$

Wherein φ.sub.S is symmetry-weighted sphericity factor, ρ.sub.SD is poured density [g/cm.sup.3], and ρ.sub.F is average particle solids density [g/cm.sup.3].

A process for removing metallic impurities from halogenated silicon compounds, such as chlorosilane monomers and/or chlorinated polysilanes is disclosed. The process involves treating a halogenated silicon compound with a tertiary amine and thereafter a suitable grade of activated carbon.