Patent classifications
C01B33/24
Energy storage device and ionic conducting composition for use therein
The present invention relates to an energy storage device comprising a silicate comprises a formula:
M.sub.vM1.sub.wM2.sub.xSi.sub.yO.sub.z
where M is selected from the group consisting of Li, Na, K, Al, and Mg M1 is selected from the group consisting of alkaline metals, alkaline earth metals, Ti, Mn, Fe, La, Zr, Ce, Ta, Nb, V and combinations thereof; M2 is selected from the group consisting of B, Al, Ga, Ge or combinations thereof; v, y and z are greater than 0; w and/or x is greater than 0; y≥x; and wherein M.sub.vM1.sub.wM2.sub.xSi.sub.yO.sub.z accounts for at least 90 wt % of the composition.
TEMPLATE-INDUCED SILICATE-DOPED HYDROXYAPATITE AND THE PREPARATION METHOD
A silicate-doped hydroxyapatite material has an ordered and directional growth structure. The silicon content in the silicate-doped hydroxyapatite material ranges from 0.1 wt % to 1.6 wt %, and silicon is doped in hydroxyapatite lattices in a form of silicate. A template-induced method for manufacturing the synthetic silicate-doped hydroxyapatite material above.
TEMPLATE-INDUCED SILICATE-DOPED HYDROXYAPATITE AND THE PREPARATION METHOD
A silicate-doped hydroxyapatite material has an ordered and directional growth structure. The silicon content in the silicate-doped hydroxyapatite material ranges from 0.1 wt % to 1.6 wt %, and silicon is doped in hydroxyapatite lattices in a form of silicate. A template-induced method for manufacturing the synthetic silicate-doped hydroxyapatite material above.
Thermal Insulation
The present invention relates to inorganic fibres having a composition comprising: 65.7 to 70.8 wt % SiO.sub.2; 27.0 to 34.2 wt % CaO; 0.10 to 2.0 wt % MgO; and optional other components providing the balance up to 100 wt %,
wherein the sum of SiO.sub.2 and CaO is greater than or equal to 97.8 wt %; and the other components, when present, comprise no more than 0.80 wt % Al.sub.2O.sub.3; and wherein the amount of MgO and other components are configured to inhibit the formation of surface crystallite grains upon heat treatment at 1100° C. for 24 hours, wherein said surface crystallite grains comprise an average crystallite size in a range of from 0.0 to 0.90 μm.
Thermal Insulation
The present invention relates to inorganic fibres having a composition comprising: 65.7 to 70.8 wt % SiO.sub.2; 27.0 to 34.2 wt % CaO; 0.10 to 2.0 wt % MgO; and optional other components providing the balance up to 100 wt %,
wherein the sum of SiO.sub.2 and CaO is greater than or equal to 97.8 wt %; and the other components, when present, comprise no more than 0.80 wt % Al.sub.2O.sub.3; and wherein the amount of MgO and other components are configured to inhibit the formation of surface crystallite grains upon heat treatment at 1100° C. for 24 hours, wherein said surface crystallite grains comprise an average crystallite size in a range of from 0.0 to 0.90 μm.
SODIUM SILICATE SOLID-STATE ELECTROLYTE MATERIAL
Materials, methods and uses for sodium silicate solid electrolyte materials, their methods of production, and their use in electrochemical cells. A solid electrolyte has the chemical composition Na.sub.xM.sub.xSi.sub.x0.sub.x, wherein M is Gd or Y, wherein x is an integer between 1 and 10, characterized in that it has a conductivity of at least 10.sup.−4 Scm.sup.−1 at 20° C., and is electrochemically stable at a current density of 0.01 mA cm.sup.−2 for at least 100 cycles. The glass ceramic has characteristics demonstrating that it is useful as a solid-state electrolyte in sodium ion batteries and in other technologies demanding a stable sodium ion conductor
NEGATIVE ELECTRODE ACTIVE MATERIAL, PREPARATION METHOD THEREOF, AND NEGATIVE ELECTRODE AND SECONDARY BATTERY INCLUDING SAME
The present invention relates to a negative electrode active material including silicon-based oxide particles and a metal distributed on a surface, inside, or on the surface of and the inside the silicon-based oxide particles, wherein compressive fracture strength measured at a pressure of 100 mN is 170 MPa to 380 MPa, and the silicon-based oxide particles contain Si crystal grains having a crystal grain size of 3 nm to 20 nm.
Stretchable film, method for forming the same, stretchable wiring film, and method for manufacturing the same
The present invention provides a stretchable film including: a cured product of a composition which contains (A) a (meth)acrylate compound having silsesquioxane, (B) a (meth)acrylate compound other than the component (A) having a urethane bond, and (C) an organic solvent having a boiling point in the range of 115 to 200° C. at atmospheric pressure; wherein the component (A) is localized in the direction of a surface of the film. The stretchable film of the present invention is excellent in stretchability and strength as well as repellency on the film surface.
Stretchable film, method for forming the same, stretchable wiring film, and method for manufacturing the same
The present invention provides a stretchable film including: a cured product of a composition which contains (A) a (meth)acrylate compound having silsesquioxane, (B) a (meth)acrylate compound other than the component (A) having a urethane bond, and (C) an organic solvent having a boiling point in the range of 115 to 200° C. at atmospheric pressure; wherein the component (A) is localized in the direction of a surface of the film. The stretchable film of the present invention is excellent in stretchability and strength as well as repellency on the film surface.
Methods for low energy inorganic material synthesis
The present invention relates to solvothermal vapor synthesis methods for the crystallization of a phase from a mixture of selected inorganic or organic precursors in an unsaturated vapor-phase reaction medium.