The present disclosure relates to a one-dimensional nano-chain structure including a single crystal structure as a minimum repeat unit structure.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided. A foam-like structure as described above for use in electrochemistry, solar cells, filler, thermal interface material, sensing or biological applications is further provided.

Provided is a process and an apparatus for purifying boron nitride nanotube (BNNT) materials. The process involves the use of a halogen gas to remove halogen-reactive impurities from boron nitride nanotube (BNNT) materials in a single step with minimal interactions to produce structurally pristine BNNT. Gaseous byproducts are produced that 5 can be removed without the need for solution phase treatments. Yield efficiencies and purity of recovered BNNT are high compared to the other known methods of purification for BNNT material.

To provide an electrolyte for a storage device capable of lowering the electric resistance and maintaining a high capacity even after charging and discharging are repeatedly carried out, and a storage device.

An electrolyte for a storage device, which comprises a lithium-containing complex compound represented by the following formula (1), (2), (3), (4) or (5):

(Li).sub.m(A).sub.n(UF.sub.x).sub.y  (1)

(Li).sub.m(Si).sub.n(O).sub.q(UF.sub.x).sub.y  (2)

wherein A is O, S, P or N; U is a boron atom or a phosphorus atom; m and n are each independently from 1 to 6; q is from 1 to 12; x is 3 or 5; and y is from 1 to 6;

(Li).sub.m(O).sub.n(B).sub.p(OWF.sub.q).sub.x  (3)

wherein W is a boron atom or a phosphorus atom; m, p and x are each independently from 1 to 15; n is from 0 to 15; and q is 3 or 5;

(Li).sub.m(B).sub.p(O).sub.n(OR).sub.y(OWF.sub.q).sub.x  (4)

wherein W is a boron atom or a phosphorus atom; n is from 0 to 15; p, m, x and y are each independently from 1 to 12; q is 3 or 5; and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, a carbonyl group, a sulfonyl group or a silyl group, and such a group may have a fluorine atom, an oxygen atom or other substituent;

(Li).sub.m(O).sub.n(B)dp(OOC-(A).sub.z-COO).sub.y(OWF.sub.q).sub.x  (5)

wherein W is a boron atom or a phosphorus atom, A is a C.sub.1-6 allylene group, alkenylene group or alkynylene group, a phenylene group, or an alkylene group having an oxygen atom or a sulfur atom in its main chain; m, p, x and y are each independently from 1 to 20; n is from 0 to 15; z is 0 or 1; and q is 3 or 5.

To provide an electrolyte for a storage device capable of lowering the electric resistance and maintaining a high capacity even after charging and discharging are repeatedly carried out, and a storage device.

An electrolyte for a storage device, which comprises a lithium-containing complex compound represented by the following formula (1), (2), (3), (4) or (5):

(Li).sub.m(A).sub.n(UF.sub.x).sub.y  (1)

(Li).sub.m(Si).sub.n(O).sub.q(UF.sub.x).sub.y  (2)

wherein A is O, S, P or N; U is a boron atom or a phosphorus atom; m and n are each independently from 1 to 6; q is from 1 to 12; x is 3 or 5; and y is from 1 to 6;

(Li).sub.m(O).sub.n(B).sub.p(OWF.sub.q).sub.x  (3)

wherein W is a boron atom or a phosphorus atom; m, p and x are each independently from 1 to 15; n is from 0 to 15; and q is 3 or 5;

(Li).sub.m(B).sub.p(O).sub.n(OR).sub.y(OWF.sub.q).sub.x  (4)

wherein W is a boron atom or a phosphorus atom; n is from 0 to 15; p, m, x and y are each independently from 1 to 12; q is 3 or 5; and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, a carbonyl group, a sulfonyl group or a silyl group, and such a group may have a fluorine atom, an oxygen atom or other substituent;

(Li).sub.m(O).sub.n(B)dp(OOC-(A).sub.z-COO).sub.y(OWF.sub.q).sub.x  (5)

wherein W is a boron atom or a phosphorus atom, A is a C.sub.1-6 allylene group, alkenylene group or alkynylene group, a phenylene group, or an alkylene group having an oxygen atom or a sulfur atom in its main chain; m, p, x and y are each independently from 1 to 20; n is from 0 to 15; z is 0 or 1; and q is 3 or 5.

The present disclosure provides an ionic conductor containing Li, P, S, BH.sub.4, and I, and includes a crystalline phase X having peaks at a position of 2θ=29.1°±0.5° and 30.4°±0.5° in XRD measurement using a CuKα ray.

The present disclosure provides an ionic conductor containing Li, P, S, BH.sub.4, and I, and includes a crystalline phase X having peaks at a position of 2θ=29.1°±0.5° and 30.4°±0.5° in XRD measurement using a CuKα ray.

The present invention relates to a polymer electrolyte and a method for manufacturing same. More specifically, a polymer electrolyte with improved ion conductivity can be produced by adding boron nitride to a solid electrolyte comprising polysiloxane.