Provided are a scroll preparing method using a two-dimensional material and a scroll prepared thereby. The scroll preparing method comprises preparing a two-dimensional material. The two-dimensional material is scrolled by providing an amphiphilic substance having a hydrophilic portion and a hydrophobic portion on the two-dimensional material. As a result, a scroll composite including the amphiphilic substance disposed inside a scroll structure is formed.

Substantially aligned boron nitride nano-element arrays prepared by contacting a carbon nano-element array with a source of boron and nitrogen; methods for preparing such arrays and methods for their use including use as a heat sink or as a thermally conductivity interface in microelectronic devices.

The present disclosure relates to a one-dimensional nano-chain structure including a single crystal structure as a minimum repeat unit structure.

Boron nitride nanotube (BNNT) material can be placed in large volume configurations such as needed for cryopumps, high surface area filters, scaffolding for coatings, transition radiation detectors, neutron detectors, and similar systems where large volumes may range from cubic millimeters to cubic meters and beyond. The technology to secure the BNNT material includes creating a scaffold of a material acceptable to the final system such as stainless steel wires for a cryopump. The BNNTs can be arranged in the scaffold by freeze drying, filtration technologies, conformal surface attachment and BNNT glue where the as-synthesized BNNT material has been partially purified or fully purified and dispersed in a dispersant.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

An amorphous boron nitride compound may include a boron nitride compound, where the boron nitride compound may be amorphous and may be doped with carbon or hydrogen. In the boron nitride compound, a total content of the carbon or the hydrogen may be in a range of about 0.1 at % to about 35 at % of a total atomic content.

To provide an electrolyte for a storage device capable of lowering the electric resistance and maintaining a high capacity even after charging and discharging are repeatedly carried out, and a storage device.

An electrolyte for a storage device, which comprises a lithium-containing complex compound represented by the following formula (1), (2), (3), (4) or (5):

(Li).sub.m(A).sub.n(UF.sub.x).sub.y(1)

(Li).sub.m(Si).sub.n(O).sub.q(UF.sub.x).sub.y(2)

wherein A is O, S, P or N; U is a boron atom or a phosphorus atom; m and n are each independently from 1 to 6; q is from 1 to 12; x is 3 or 5; and y is from 1 to 6;

(Li).sub.m(O).sub.n(B).sub.p(OWF.sub.q).sub.x(3)

wherein W is a boron atom or a phosphorus atom; m, p and x are each independently from 1 to 15; n is from 0 to 15; and q is 3 or 5;

(Li).sub.m(B).sub.p(O)n(OR).sub.y(OWF.sub.q).sub.x(4)

wherein W is a boron atom or a phosphorus atom; n is from 0 to 15; p, m, x and y are each independently from 1 to 12; q is 3 or 5; and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, a carbonyl group, a sulfonyl group or a silyl group, and such a group may have a fluorine atom, an oxygen atom or other substituent;

(Li).sub.m(O).sub.n(B).sub.p(OOC-(A).sub.z-COO).sub.y(OWF.sub.q).sub.x(5)

wherein W is a boron atom or a phosphorus atom, A is a C.sub.1-6 allylene group, alkenylene group or alkynylene group, a phenylene group, or an alkylene group having an oxygen atom or a sulfur atom in its main chain; m, p, x and y are each independently from 1 to 20; n is from 0 to 15; z is 0 or 1; and q is 3 or 5.

To provide an electrolyte for a storage device capable of lowering the electric resistance and maintaining a high capacity even after charging and discharging are repeatedly carried out, and a storage device.

An electrolyte for a storage device, which comprises a lithium-containing complex compound represented by the following formula (1), (2), (3), (4) or (5):

(Li).sub.m(A).sub.n(UF.sub.x).sub.y(1)

(Li).sub.m(Si).sub.n(O).sub.q(UF.sub.x).sub.y(2)

wherein A is O, S, P or N; U is a boron atom or a phosphorus atom; m and n are each independently from 1 to 6; q is from 1 to 12; x is 3 or 5; and y is from 1 to 6;

(Li).sub.m(O).sub.n(B).sub.p(OWF.sub.q).sub.x(3)

wherein W is a boron atom or a phosphorus atom; m, p and x are each independently from 1 to 15; n is from 0 to 15; and q is 3 or 5;

(Li).sub.m(B).sub.p(O)n(OR).sub.y(OWF.sub.q).sub.x(4)

wherein W is a boron atom or a phosphorus atom; n is from 0 to 15; p, m, x and y are each independently from 1 to 12; q is 3 or 5; and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, a carbonyl group, a sulfonyl group or a silyl group, and such a group may have a fluorine atom, an oxygen atom or other substituent;

(Li).sub.m(O).sub.n(B).sub.p(OOC-(A).sub.z-COO).sub.y(OWF.sub.q).sub.x(5)

wherein W is a boron atom or a phosphorus atom, A is a C.sub.1-6 allylene group, alkenylene group or alkynylene group, a phenylene group, or an alkylene group having an oxygen atom or a sulfur atom in its main chain; m, p, x and y are each independently from 1 to 20; n is from 0 to 15; z is 0 or 1; and q is 3 or 5.

The present invention relates to compounds and their nonlinear optical (NLO) crystals of A.sub.3B.sub.11P.sub.2O.sub.23 (A=K, Rb, Cs, NH.sub.4), their producing method and uses thereof. The series of compounds have a chemical formula of A.sub.3B.sub.11P.sub.2O.sub.23 (A=K, Rb, Cs, NH.sub.4), which are namely K.sub.3B.sub.11P.sub.2O.sub.23, Rb.sub.3B.sub.11P.sub.2O.sub.23, Cs.sub.3B.sub.11P.sub.2O.sub.23 and (NH.sub.4).sub.3B.sub.11P.sub.2O.sub.23. The series of NLO crystals having the chemical formula of A.sub.3B.sub.11P.sub.2O.sub.23 (A=K, Rb, Cs, NH.sub.4), belong to rhombohedral crystal system, and have a space group of R3, crystal cell parameters of a=b=10.016(5)-12.591(5) , c=12.105(6)-14.905(6) , Z=3. A.sub.3B.sub.11P.sub.2O.sub.23 (A=K, Rb, Cs, NH.sub.4) compounds were prepared by a solid-state reaction method or a hydrothermal method, and A.sub.3B.sub.11P.sub.2O.sub.23 (A=K, Rb, Cs, NH.sub.4) NLO crystals were prepared by a high-temperature solid-state reaction method, a hydrothermal method, or a solution method. T They meet the requirements for the frequency conversion of UV wavelength lasers and could be used to prepare nonlinear optical devices.