As disclosed herein, the viscoelastic performance of boron nitride nanotube (BNNT) materials may be enhanced and made into useful formats by utilizing purified BNNTs, aligned BNNTs, isotopically enhanced BNNTs, and density controlled BNNT material. Minimizing the amounts of boron particles, a-BN particles, and h-BN nanocages, and optimizing the h-BN nanosheets has the effect of maximizing the amount of BNNT surface area present that may interact with BNNTs themselves and thereby create the nanotube-to-nanotube friction that generates the viscoelastic behavior over temperatures from near absolute zero to near 1900 K. Aligning the BNNT molecular strands with each other within the BNNT material also generates enhanced friction surfaces. The transport of phonons along the BNNT molecules may be further enhanced by utilizing isotopically enhanced BNNTs.

A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000 C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided. A foam-like structure as described above for use in electrochemistry, solar cells, filler, thermal interface material, sensing or biological applications is further provided.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

A negative electrode active material includes a layered compound that includes: a plurality of layers and calcium located between the plurality of layers; each of the plurality of layers containing carbon and boron and further containing nitrogen or phosphorus.

Described herein are apparatus, systems, and methods for the continuous production of BNNT fibers, BNNT strands and BNNT initial yarns having few defects and good alignment. BNNTs may be formed by thermally exciting a boron feedstock in a chamber in the presence of pressurized nitrogen. BNNTs are encouraged to self-assemble into aligned BNNT fibers in a growth zone, and form BNNT strands and BNNT initial yarns, through various combinations of nitrogen gas flow direction and velocities, heat source distribution, temperature gradients, and chamber geometries.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

Systems, devices, and methods related to or that employ chalcogenide memory components and compositions are described. A memory device, such as a selector device, may be made of a chalcogenide material composition. A chalcogenide material may have a composition that includes one or more elements from the boron group, such as boron, aluminum, gallium, indium, or thallium. A selector device, for instance, may have a composition of selenium, arsenic, and at least one of boron, aluminum, gallium, indium, or thallium. The selector device may also be composed of germanium or silicon, or both. The relative amount of boron, aluminum, gallium, indium, or thallium may affect a threshold voltage of a memory component, and the relative amount may be selected accordingly. A memory component may, for instance have a composition that includes selenium, arsenic, and some combination of germanium, silicon, and at least one of boron, aluminum, gallium, indium, or thallium.

A high-compaction lithium iron phosphate positive electrode material, a preparation method thereof, a positive electrode and a battery including the same. The high-compaction lithium iron phosphate positive electrode material comprises lithium iron phosphate of formula LiFe.sub.1-x-yV.sub.xTi.sub.y(BO.sub.3).sub.z(PO.sub.4).sub.1-z, and carbon coated on a surface of the lithium iron phosphate, wherein, 0.001x0.01, 0.001y0.01, and 0.05z0.2. The high-compaction lithium iron phosphate positive electrode material has a high compacted density, a high specific capacity, and excellent rate performance and cycle performance, and is useful for preparing batteries having a high compacted density, a high capacity, good rate performance and cycle performance, which are suitable for high-end pure electric vehicles having a long driving mileage.

A method for purifying solid borazane (NH.sub.3BH.sub.3 (s)) includes a) bringing solid borazane (NH.sub.3BH.sub.3 (s)) containing impurities into contact with a stream of gaseous ammonia (NH.sub.3 (g)) to obtain, by selective liquefaction of the borazane, a liquid phase containing liquefied borazane and ammonia and a solid phase constituted of at least a part of the impurities, b) separating the liquid and solid phases for recovery of the liquid phase, on the one hand, and of the solid phase, on the other hand; c) removing the ammonia from the recovered liquid phase, this removal causing precipitation of the purified borazane (NH.sub.3BH.sub.3 (s)); and d) recovering the purified precipitated borazane (NH.sub.3BH.sub.3 (s)).