C01F17/32

METHOD FOR PRODUCING OXYGEN SENSOR

A production method for producing an oxygen sensor, includes spinning a precursor consisting of a salt of at least one metal chosen from Sc, Y, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Yb, Sr, Ba, Mn, Co, Mg, and Ga, a solvent, and a macromolecular polymer to produce nanofibers of the precursor containing the salt of the metal. The method further includes calcining the nanofibers of the precursor at a temperature ranging from 550 C. to 650 C. for 2 to 4 hours, and making a solid electrolyte material composed of the nanofibers obtained from the calcining. The resulting solid electrolyte material constitutes a part of the oxygen sensor.

Chemically Stable Proton Conducting Doped BaCeO3

Solid electrolytes, anodes and cathodes for SOFC. Doped BaCeO.sub.3 useful for solid electrolytes and anodes in SOFCs exhibiting chemical stability in the presence of CO.sub.2, water vapor or both and exhibiting proton conductivity sufficiently high for practical application. Proton-conducting metal oxides of formula Ba.sub.1xSr.sub.xCe.sub.1y1y2y3Zr.sub.y1Gd.sub.y2Y.sub.y3O.sub.3 where x, y1, y2, and y3 are numbers as follows: x is 0.4 to 0.6; y1 is 0.1-0.5; y2 is 0.05 to 0.15, y3 is 0.05 to 0.15, and cathode materials of formula II GdPrBaCo.sub.2zFe.sub.zO.sub.5+ where z is a number from 0 to 1, and is a number that varies such that the metal oxide compositions are charge neutral. Anodes, cathodes and solid electrolyte containing such materials. SOFC containing anodes, cathodes and solid electrolyte containing such materials.

SUPERCONDUCTING WIRE

A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Composition of Aluminium Oxide and Cerium Oxide

The invention relates to a composition which is a composition C1 which is based on Al and Ce in the form of oxides; or a composition C2 which is based on Al, Ce and La in the form of oxides with the following proportions of CeO.sub.2 is between 5.0 wt % and 35.0 wt %; La.sub.2O.sub.3 (for composition C2 only) is between 0.1 wt % and 6.0 wt %; the remainder being Al.sub.2O.sub.3; and exhibiting a specific porosity profile and exhibiting the following properties of a mean size of the crystallites after calcination in air at 1100 C. for 5 hours (denoted D.sub.1100 C.-5h) which is lower than 45.0 nm; a mean size of the crystallites after calcination in air at 900 C. for 2 hours (denoted D.sub.900 C.-2h) which is lower than 25.0 nm; and an increase D of the mean size of the crystallites lower than 30.0 nm, D being calculated with the following formula: D=D.sub.1100 C.-5hD.sub.900 C.-2h; the mean size of the crystallites being obtained by XRD from the diffraction peak of the cubic phase corresponding to cerium oxide, generally present at 2 between 28.0 and 30.0.

Composition of Aluminium Oxide and Cerium Oxide

The invention relates to a composition which is a composition C1 which is based on Al and Ce in the form of oxides; or a composition C2 which is based on Al, Ce and La in the form of oxides with the following proportions of CeO.sub.2 is between 5.0 wt % and 35.0 wt %; La.sub.2O.sub.3 (for composition C2 only) is between 0.1 wt % and 6.0 wt %; the remainder being Al.sub.2O.sub.3; and exhibiting a specific porosity profile and exhibiting the following properties of a mean size of the crystallites after calcination in air at 1100 C. for 5 hours (denoted D.sub.1100 C.-5h) which is lower than 45.0 nm; a mean size of the crystallites after calcination in air at 900 C. for 2 hours (denoted D.sub.900 C.-2h) which is lower than 25.0 nm; and an increase D of the mean size of the crystallites lower than 30.0 nm, D being calculated with the following formula: D=D.sub.1100 C.-5hD.sub.900 C.-2h; the mean size of the crystallites being obtained by XRD from the diffraction peak of the cubic phase corresponding to cerium oxide, generally present at 2 between 28.0 and 30.0.

CERAMIC MATERIAL, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR MANUFACTURING APPARATUS MEMBER
20170029286 · 2017-02-02 · ·

The ceramic material of the present invention contains a crystalline phase of a complex oxide containing a Group Il element M and a rare earth element RE, The Group II element M is Sr, ca, or Ba. An XRD diagram of the ceramic material shows a first new peak between peaks derived from the (040) plane and the (320) plane of MRE.sub.2O.sub.4. Such a ceramic material may be manufactured by, for example, preparing a material containing MRE.sub.2O.sub.4 or a material capable of reacting in thermal spray flame to produce MRE.sub.2O.sub.4 as a thermal spray material, and thermally spraying the thermal spray material onto a predetermined object.

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES
20250207297 · 2025-06-26 ·

A single-crystalline LnBM.sub.2O.sub.5+ or LnBM.sub.2O.sub.5.5+ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 01. Methods of making and using the compound, and devices and compositions including same are also provided.

TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES
20250207297 · 2025-06-26 ·

A single-crystalline LnBM.sub.2O.sub.5+ or LnBM.sub.2O.sub.5.5+ compound is provided, which includes an ordered oxygen vacancy structure; wherein Ln is a lanthanide, B is an alkali earth metal, M is a transition metal, O is oxygen, and 01. Methods of making and using the compound, and devices and compositions including same are also provided.

Method of producing metal oxyhydride, metal oxyhydride, and method of synthesizing ammonia using same

The invention provides a method of producing a metal oxyhydride, capable of synthesizing the metal oxyhydride under reaction conditions close to atmospheric pressure, and excellent in productivity and cost. The method of producing a metal oxyhydride of the present invention includes reacting an oxide with a metal hydride in a hydrogen atmosphere. A non-oxygen element constituting the oxide comprises only one kind of non-oxygen element. A pressure condition of the reaction is 0.1 to 0.9 MPa, and a temperature of the reaction is 500 to 1000 C.

Method of producing metal oxyhydride, metal oxyhydride, and method of synthesizing ammonia using same

The invention provides a method of producing a metal oxyhydride, capable of synthesizing the metal oxyhydride under reaction conditions close to atmospheric pressure, and excellent in productivity and cost. The method of producing a metal oxyhydride of the present invention includes reacting an oxide with a metal hydride in a hydrogen atmosphere. A non-oxygen element constituting the oxide comprises only one kind of non-oxygen element. A pressure condition of the reaction is 0.1 to 0.9 MPa, and a temperature of the reaction is 500 to 1000 C.