C01G23/047

DIELECTRIC POWDER AND MULTILAYER CAPACITOR USING THE SAME

A dielectric powder includes a core-shell structure including a core region formed in an inner portion thereof and a shell region covering the core region. The core region includes barium titanate (BaTiO.sub.3) doped with a metal oxide, and the shell region is formed of a ferroelectric material.

Electrolysis electrode featuring metal-doped nanotube array and methods of manufacture and using same

An electrolysis electrode includes a metal-doped array of nanotubes formed on a substrate. The nanotube array (NTA) may be a stabilized metal-doped black TiO.sub.2 NTA formed on a titanium substrate, and the metal dopant may include any suitable metal, for example, cobalt. The metal dopant improves the reactivity of the electrode and enhances its service life. The metal-doped NTA electrode may provide improved chlorine evolution and/or oxygen evolution activity for electrochemical wastewater treatment. The electrode may also be useful for water splitting applications. Increasing the loading of the metal dopant may lead to the formation of a metal oxide layer on top of the NTA, which improves oxygen evolution reaction (OER) overpotential.

Electrolysis electrode featuring metal-doped nanotube array and methods of manufacture and using same

An electrolysis electrode includes a metal-doped array of nanotubes formed on a substrate. The nanotube array (NTA) may be a stabilized metal-doped black TiO.sub.2 NTA formed on a titanium substrate, and the metal dopant may include any suitable metal, for example, cobalt. The metal dopant improves the reactivity of the electrode and enhances its service life. The metal-doped NTA electrode may provide improved chlorine evolution and/or oxygen evolution activity for electrochemical wastewater treatment. The electrode may also be useful for water splitting applications. Increasing the loading of the metal dopant may lead to the formation of a metal oxide layer on top of the NTA, which improves oxygen evolution reaction (OER) overpotential.

Optical lens with antireflective film, projection lens, and projection lens optical system
11846754 · 2023-12-19 · ·

An optical lens with an antireflective film includes: a lens substrate; and an antireflective film disposed on the lens substrate. The antireflective film is formed of layers each having a physical thickness of 140 nm or less. In order from an air side, the antireflective film has: a first layer formed as an MgF.sub.2 layer, a second layer, a fourth layer, a sixth layer, an eighth layer, and a tenth layer each having a refractive index of 2.0 or more and 2.3 or less, and a third layer, a fifth layer, a seventh layer, and a ninth layer each formed as an SiO.sub.2 layer.

Optical lens with antireflective film, projection lens, and projection lens optical system
11846754 · 2023-12-19 · ·

An optical lens with an antireflective film includes: a lens substrate; and an antireflective film disposed on the lens substrate. The antireflective film is formed of layers each having a physical thickness of 140 nm or less. In order from an air side, the antireflective film has: a first layer formed as an MgF.sub.2 layer, a second layer, a fourth layer, a sixth layer, an eighth layer, and a tenth layer each having a refractive index of 2.0 or more and 2.3 or less, and a third layer, a fifth layer, a seventh layer, and a ninth layer each formed as an SiO.sub.2 layer.

Synthesized, surface-functionalized, acidified metal oxide materials for energy storage, catalytic, photovoltaic and sensor applications
10978704 · 2021-04-13 · ·

An acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface. The AMO material is useful in applications such as a battery electrode, catalyst, or photovoltaic component.

Synthesized, surface-functionalized, acidified metal oxide materials for energy storage, catalytic, photovoltaic and sensor applications
10978704 · 2021-04-13 · ·

An acidified metal oxide (“AMO”) material, preferably in monodisperse nanoparticulate form 20 nm or less in size, having a pH<7 when suspended in a 5 wt % aqueous solution and a Hammett function H.sub.0>−12, at least on its surface. The AMO material is useful in applications such as a battery electrode, catalyst, or photovoltaic component.

Functional layer including layered double hydroxide, and composite material
10994511 · 2021-05-04 · ·

There is provided a functional layer including a layered double hydroxide (LDH). The functional layer includes a first layer with a thickness of 0.10 μm or more, the first layer being composed of fine LDH particles having a diameter of less than 0.05 μm, and a second layer composed of large LDH particles having a mean particle diameter of 0.05 μm or more, the second layer being an outermost layer provided on the first layer.

Functional layer including layered double hydroxide, and composite material
10994511 · 2021-05-04 · ·

There is provided a functional layer including a layered double hydroxide (LDH). The functional layer includes a first layer with a thickness of 0.10 μm or more, the first layer being composed of fine LDH particles having a diameter of less than 0.05 μm, and a second layer composed of large LDH particles having a mean particle diameter of 0.05 μm or more, the second layer being an outermost layer provided on the first layer.

Selective emitter for thermophotovoltaic power generator
10978988 · 2021-04-13 · ·

A selective emitter exhibiting heat resistance up to 1000° C., comprising a metal body, a first dielectric layer provided on one surface of the metal body, a composite layer provided on another surface of the first dielectric layer at an opposite side to the metal body side, and a second dielectric layer provided on another surface of the composite layer at an opposite side to the first dielectric layer, the composite layer being a layer provided with a metal or semiconductor dispersed in an oxide of the metal or the semiconductor.