A carrier core material is represented by a composition formula M.sub.XFe.sub.3-XO.sub.4 (where M is at least one type of metal element selected from Mg, Mn, Ca, Ti, Cu, Zn and Ni, 0<X<1), in which part of M and/or Fe is substituted with Sr and formed of ferrite particles, and in the carrier core material, a Sr content is equal to or more than 2500 ppm but equal to or less than 12000 ppm, the amount of Sr eluted with pure water at a temperature of 25 C. is equal to or less than 50 ppm, an apparent density is equal to or more than 1.85 g/cm.sup.3 but equal to or less than 2.25 g/cm.sup.3 and magnetization .sub.1k when a magnetic field of 79.5810.sup.3 A/m (1000 oersteds) is applied is equal to or more than 63 Am.sup.2/kg but equal to or less than 75 Am.sup.2/kg.

Provided is an electrode active material for a fluoride ion battery. The electrode active material for a fluoride ion battery includes a complex oxide that comprises a melilite-type crystal structure. The complex oxide includes: a first metal atom that comprises at least one type selected from a first metal atom group; a second metal atom that comprises at least one type selected from a second metal atom group; a specific non-metal atom that comprises at least one type selected from a specific non-metal atom group; and at least an oxygen atom as the specific non-metal atom. The first metal atom group includes Li, Be, Na, Mg, K, Ca, Rb, Sr, Y, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Bi. The second metal atom group includes Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Sn, Hf, Ta, W, Re, Os, Ir, Pt, and Au. The specific non-metal atom group includes O, F, N, S, and Cl.

The object of the present invention is to provide silicon doped metal oxide particles for UV absorption, which average molar absorption coefficient in the wavelength range of 200 nm to 380 nm, is enhanced. Provided is silicon doped metal oxide particles in which the metal oxide particles are doped with silicon, wherein an average molar absorption coefficient in the wavelength range of 200 nm to 380 nm, of a dispersion in which the silicon doped metal oxide particles are dispersed in a dispersion medium, is improved as compared with similar metal oxide particles not doped with silicon.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.

A ferrite composition is provided containing Ba, Co, and Ir and having a Z-type hexaferrite phase and a Y-type hexaferrite phase. The ferrite composition has the formula Ba.sub.3Co.sub.(2+x)Ir.sub.xFe.sub.(24-2x)O.sub.41 where x=0.05-0.20. The composition has equal or substantially equal values of permeability and permittivity while retaining low magnetic and dielectric loss factors. The composition is suitable for ultrahigh frequency applications such as high frequency and microwave antennas.

There is provided a ferrite powder for bonded magnets capable of producing ferrite bonded magnets with high BH.sub.max, excellent in MFR when converted to a compound, with high p-iHc, wherein an average particle size of particles obtained by a dry laser diffraction measurement is 5 m or less, a specific surface area is 1.90 m.sup.2/g or more and less than 3.00 m.sup.2/g, a compression density is 3.40 g/cm.sup.3 or more and less than 3.73 g/cm.sup.3, and a compressed molding has a coercive force of 2800 Oe or more and less than 3250 Oe.

A grain-oriented M-type hexagonal ferrite has the formula MeFe.sub.12O.sub.19, and a dopant effective to provide planar magnetic anisotropy and magnetization in a c-plane, or a cone anisotropy, in the hexagonal crystallographic structure wherein Me is Sr.sup.+, Ba.sup.2+ or Pb.sup.2+, and wherein greater than 30%, preferably greater than 80%, of c-axes of the ferrite grains are aligned perpendicular to the c-plane.

The present invention provides a ferrite sintered magnet comprising (1) main phase grains containing a ferrite having a hexagonal structure, (2) two-grain boundaries formed between two of the main phase grains, and (3) multi-grain boundaries surrounded by three or more of the main phase grains. The above ferrite sintered magnet comprises Ca, R, Sr, Fe and Co, with R being at least one element selected from the group consisting of rare earth elements and Bi, and comprising at least La. The number Nm of the above main phase grains and the number Ng of the above multi-grain boundaries in the cross section including the direction of the easy magnetization axis of the above ferrite sintered magnet satisfy the formula (1A):

50%Nm/(Nm+Ng)65%(1A).

There is provided a ferrite sintered magnet having a high residual magnetic flux density.

A ferrite sintered magnet 2 includes a plurality of main phase particles 5 including ferrite having a hexagonal structure, the number of core-shell structured particles 5A having a core 7 and a shell 9 covering the core 7, among the main phase particles 5, is smaller than the number of the main phase particles 5 other than the core-shell structured particles 5A.

Disclosed herein are doped perovskite oxides. The doped perovskite oxides may be used as a cathode material in an electrochemical cell to electrochemically generate ammonia from N.sub.2. The doped perovskite oxides may be combined with nitride compounds, for instance iron nitride, to further increase the efficiency of the ammonia production.