A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

The present invention relates to a method for identifying a solid solution ceramic material of a plurality of perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition, as well as a method for making such ceramic materials and ceramic materials obtainable therefrom. In particular, the present invention is directed to a method of identifying a solid solution ceramic material of at least three perovskite compounds which exhibits an electric field induced strain derived from a reversible phase transition; said method comprising the steps of: i) determining a molar ratio of at least one tetragonal perovskite compound to at least one non-tetragonal perovskite compound which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a tetragonal phase having an axial ratio c/a of greater than 1.005 to 1.04; and ii) determining a molar ratio of at least one additional non-tetragonal perovskite compound to the combination of perovskite compounds from step i) at the determined molar ratio which, when combined to form a solid solution, provides a ceramic material comprising a major portion of a pseudo-cubic phase having an axial ratio c/a of from 0.995 to 1.005 and/or a rhombohedral angle of 90±0.5 degrees.

An organometallic compound, which enables thin-film deposition through vapor deposition, and particularly to a Co or Fe precursor, which is suitable for use in atomic layer deposition or chemical vapor deposition, and a method of preparing the same.

A light emitting device is provided. The device comprises a first electrode, a second electrode and at least two emissive layers. A first emissive layer of the at least two emissive layers is disposed over the first electrode. A second emissive layer of the at least two emissive layers is disposed over the first emissive layer. The first emissive layer is in contact with the second emissive layer. The second electrode is disposed over the second emissive layer. At least one emissive layer of the at least two emissive layers comprises a perovskite light emitting material. The device comprises at least one further emissive layer of the at least two emissive layers, wherein the at least one further emissive layer comprises a perovskite light emitting material, an organic light emitting material or a quantum dot light emitting material.

A powder which is composed of particles that are mainly composed of calcium titanate having a perovskite crystal structure, and primary particles of which have a generally spherical shape and an average particle diameter within the range of from 20 nm to 100 nm (inclusive). This powder is produced by a method which comprises: the production of calcium titanate by subjecting a mixed liquid that contains a sugar, an alkali, a water-soluble compound containing calcium, and a compound which is obtained by deflocculating a hydrolysis poroduct of a titanium compound with use of a monobasic acid to a high-pressure liquid-phase reaction that includes heating to a temperature of from 100° C. to 270° C. (inclusive),; and a subsequent calcium removal treatment.

A reverse mode light valve, the manufacture of a light control device and a method of controlling light transmittance by using of the reverse mode light valve, the reverse mode light valve containing ABX.sub.3 perovskite particles (200) suspended in a liquid suspension (300) can control light transmittance in a higher light transmittance when the power is turned off (OFF state) and lower light transmittance when the power is turned on (ON state). In the ABX.sub.3 perovskite particles (200), A is at least one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+, and Rb.sup.+, B is at least one of Pb.sup.2+, Ge.sup.2+, and Sn.sup.2+, and X is at least one of Cl.sup.−, Br.sup.−, and I.sup.−.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

The present invention relates to a material of the formula SnTiO.sub.3 having a crystal structure comprised of layers, wherein the layers comprise Sn(II) ions, Ti(IV) ions and edge-sharing O.sub.6-octahedra, the edge-sharing O.sub.6-octahedra form a sub-layer, the Ti(IV) ions are located within ⅔ of the edge-sharing O.sub.6-octahedra, thus forming edge-sharing TiO.sub.6-octahedra, the edge-sharing TiO.sub.6-octahedra form a honeycomb structure within the sub-layer, the honeycomb structure comprising hexagons with Ti(IV)-vacancies within the hexagons, the Sn(II) ions are located above and below the Ti(IV)-vacancies with respect to the sub-layer, the Ti(IV) ions are optionally substituted with M, M is one or more elements selected from Group 4 and Group 14 elements, and the crystal structure satisfies at least one of the following features (i) and (ii): (i) the Sn(II) ions have a tetrahedral coordination sphere involving three O ions of the layer and the electron lone pair of the Sn(II) ions which is situated at an apical position relative to the three O ions of the layer, (ii) the layers are stacked so that each layer is translated relative to each adjacent layer by a stacking vector S1 or a stacking vector S2, the centers of adjacent hexagons form a parallelogram with a side having a length x and side having a length y, the stacking vector S1 is a combined translation along the side having the length x by ⅔ x and along the side having a lengthy by ⅓ y, the stacking vector S2 is a combined translation along the side having the length x by ⅓ x and along the side having a lengthy by ⅔ y, and the crystal structure comprises layers translated relative to adjacent layers by the stacking vector 1 and layers translated relative to adjacent layers by the stacking vector S2. The present invention is further directed to a material of the formula SnTiO.sub.3 having a tetragonal perovskite-type crystal structure, a method for the preparation of SnTiO.sub.3, a device comprising a ferroelectric material and a use of the material of the formula SnTiO.sub.3 in a ferroelectric element.

An oxide superconductor according to an embodiment includes an oxide superconducting layer includes a single crystal having a continuous perovskite structure containing at least one rare earth element selected from the group consisting of yttrium, lanthanum, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium, barium, and copper, containing praseodymium in a part of the site of the rare earth element in the perovskite structure, and having a molar ratio of praseodymium of 0.00000001 or more and 0.2 or less with respect to the sum of the at least one rare earth element and praseodymium; fluorine in an amount of 2.0×10.sup.15 atoms/cc or more and 5.0×10.sup.19 atoms/cc or less; and carbon in an amount of 1.0×10.sup.17 atoms/cc or more and 5.0×10.sup.20 atoms/cc or less.

The present invention relates to a bismuth-based solid solution ceramic material, as well as a process for preparing the ceramic material and uses thereof, particularly in an actuator component employed, for example, in a droplet deposition apparatus. In particular, the present invention relates to a ceramic material having a general chemical formula (I): (I): x(Bi.sub.0.5Na.sub.0.5)TiO.sub.3-y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein x+y+Z.sub.1+Z.sub.2=1; y, (z.sub.1+z.sub.2)≠0; x≥0. In embodiments, the present invention also relates to a ceramic material having a general chemical formula (II): x(Bi0.5Na0.5)TiO3-y(Bi0.5K0.5)TiO3-y(Bi0.5K0.5)TiO3-ZiSrHfO3-z2SrZrO3, wherein x+y+z−i+z2=1; x, y, fa+z2)≠0; as well as a ceramic material of general formula (III): y(Bi.sub.0.5K.sub.0.5)TiO.sub.3-z.sub.1SrHfO.sub.3-z.sub.2SrZrO.sub.3, wherein y+z.sub.1,+z.sub.2=1; y, (z.sub.1+z.sub.2)≠0.