Disclosed is a particle with a component (1) and a component (2), in which the component (2) covers at least a portion of the surface of the component (1), and the component (2) includes an organic silicon compound layer including a siloxane bond and an inorganic silicon compound layer including a siloxane bond.

In one aspect, composite nanoparticles are provided. In some embodiments, a composite nanoparticle comprises a host matrix comprising A.sub.4BX.sub.6-ZY.sub.Z and ABX.sub.3-PY.sub.P inclusions dispersed within the host matrix of the composite nanoparticle, wherein A is an alkali metal, B is an element selected from the group consisting of transition metals, Group IVA elements and rare earth elements and X and Y are independently selected from Group VIIA elements, 0≤z≤6, and 0≤p<3.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of gadolinium can be added into specific sites in the crystal structure of the synthetic garnet by incorporating indium, a trivalent element. By including both indium and increased amounts of gadolinium, the dielectric constant can be improved. Thus, embodiments of the disclosed material can be advantageous in both above and below resonance applications, such as for isolators and circulators.

A mixed ionic and electronic conductor represented by Formula 1:
T.sub.xVa.sub.yA.sub.1-x-yM.sub.zO.sub.3-δ,
wherein T includes at least one monovalent cation, A includes at least one of a monovalent cation, a divalent cation, and a trivalent cation, M includes at least one of a trivalent cation, a tetravalent cation, and a pentavalent cation, M is an element other than Ti and Zr, Va is a vacancy, δ is an oxygen vacancy, 0<x, y≤0.25, 0<z<1, and 0≤δ≤1.

Provided are metal halide perovskite light emitting device and method of manufacturing the same. The metal halide perovskite light emitting device uses perovskite film having a multi-dimensional crystal structure derived from a proton transfer reaction as light emitting layer. Due to self-assembled shell of the perovskite film, ion movement is suppressed and surface defects are removed. Thereby, photoluminescence intensity, luminescence efficiency and lifetime are improved. By injecting a fluorine-based material and a basic material into the PEDOT:PSS conductive polymer used as the conventional hole injection layer, the acidity is controlled and the work function of the interface is improved. Furthermore, chemically stable graphene barrier layer protects the electrode vulnerable to acid, so that a high-efficiency light emitting device can be manufactured.

A ceramic electronic component includes: a body including dielectric layers and internal electrodes; and external electrodes disposed on the body and connected to the internal electrodes, wherein the dielectric layer includes a plurality of dielectric crystal grains, and at least one of the plurality of dielectric crystal grains has a core-double shell structure, the double shell includes a first shell surrounding at least a portion of the core and a second shell surrounding at least a portion of the first shell, the first shell includes a first element, one or more of Sn, Sb, Ge, Si, Ga, In, or Zr, and the second shell includes a second element, one or more of Ca or Sr.

In accordance with the purpose(s) of the present disclosure, as embodied and broadly described herein, the disclosure, in one aspect, relates to compound Bi-poor perovskite crystals, methods for making the same, and ionizing and other electromagnetic radiation detectors constructed using the Bi-poor perovskite crystals. The Bi-poor perovskite crystals can be synthesized using melt-based growth methods and solution-based growth methods and contain no toxic heavy metals such as lead, cadmium, thallium, or mercury. Devices fabricated from the crystals maintain acceptable levels of performance over time. In some aspects, post-growth annealing can be used to improve the properties, including, but not limited to, room temperature resistivity and response to radiation.

A method for obtaining a salt with a general formula: R.sub.xNI, wherein: R.sub.xN is an organic cation (R.sub.xN.sup.+), R represents substituents (R−) independently selected from a group consisting of organic substituents: R.sup.1−, R.sup.2—, R.sup.3— and hydrogen (H—), x is a number of the substituents R— directly linked with the nitrogen (N) atom in the organic cation R.sub.xN.sup.+, wherein x is 3 or 4, I is an iodide anion (I.sup.−). The method comprises: preparing a reaction mixture comprising the steps of: synthesizing hydrogen iodide (HI) in situ by mixing molecular iodine (I.sub.2) with formic acid (COOH) in a molar ratio of molecular iodine (I.sub.2): formic acid (COOH) of no less than 1.01:1, in a solvent medium, introducing into the solvent medium a compound being a donor of organic cation R.sub.xN.sup.+ in an amount providing the molar ratio of the donor of organic cation R.sub.xN.sup.+: molecular iodine (I.sub.2) of no less than 1.01:1, and maintaining the reaction mixture at a temperature of not less than 20° C. for the time necessary to obtain the reaction product being the salt with the general formula R.sub.xNI. The obtained product is a substrate for synthesis of perovskites.

An electromechanical transducer includes an electromechanical transducer film of laminated layers including a perovskite-type complex oxide represented by a general formula of ABO.sub.3; and a pair of electrodes opposed to each other with the electromechanical transducer film interposed between the pair of electrodes. In the general formula of ABO.sub.3, A includes Pb and B includes Zr and Ti. A variable ratio ΔPb of Pb, determined by Pb(max)−Pb(min), is 6% or less and a variable ratio ΔZr of Zr, determined by Zr(max)−Zr(min), is 9% or less, where an atomic weight ratio of Pb in the electromechanical transducer film is denoted by Pb/B, an atomic weight ratio of Zr in the electromechanical transducer film is denoted by Zr/B, a maximum value and a minimum value of the atomic weight ratio of Pb in a film thickness direction of the electromechanical transducer film are denoted by Pb(max) and Pb(min), respectively, and a maximum value and a minimum value of the atomic weight ratio of Zr in the film thickness direction of the electromechanical transducer film are denoted by Zr(max) and Zr(min), respectively.

A reverse mode light valve, the manufacture of a light control device and a method of controlling light transmittance by using of the reverse mode light valve, the reverse mode light valve containing ABX.sub.3 perovskite particles (200) suspended in a liquid suspension (300) can control light transmittance in a higher light transmittance when the power is turned off (OFF state) and lower light transmittance when the power is turned on (ON state). In the ABX.sub.3 perovskite particles (200), A is at least one of Cs.sup.+, CH.sub.3NH.sub.3.sup.+, and Rb.sup.+, B is at least one of Pb.sup.2+, Ge.sup.2+, and Sn.sup.2+, and X is at least one of Cl.sup.−, Br.sup.−, and I.sup.−.