Disclosed is a method for synthesizing two-dimensional (2D) silicon carbide and other materials. The method includes the use of hexagonal SiC precursor in a wet exfoliation technique. The method may also include synthesizing two-dimensional (2D) silicon carbide by a chemical vapor deposition method, or a combination of a liquid exfoliation technique and a chemical vapor deposition method.

A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

The present disclosure relates to a cathode additive, a method for preparing the same, and a cathode and a lithium secondary battery including the same. More specifically, one embodiment of the present disclosure provides a cathode additive that can offset an irreversible capacity imbalance, increase the initial charge capacity of a cathode, and simultaneously inhibit the generation of a gas in a battery.

Molecular sieves comprising intergrowths of cha and aft having an “sfw-GME tail”, at least one structure directing agent (SDA) within the framework of the molecular sieve, an intergrowth of CHA and GME framework structures, cha cavities, and aft cavities are described. A first SDA comprising either an N,N-dimethyl-3,5-dimethylpiperidinium cation or a N,N-diethyl-2,6-dimethylpiperidinium cation is required. A second SDA, which can further be present, is a CHA or an SFW generating cation. The amount of the second SDA-2 used can change the proportion of the components in the cha-aft-“sfw-GME tail”. Activated molecular sieves formed from SDA containing molecular sieves are also described. Compositions for preparing these molecular sieves are described. Methods of preparing a SDA containing JMZ-11, an activated JMZ-11, and metal containing activated JMZ-11 are described. Methods of using activated JMZ-11 and metal containing activated JMZ-11 in a variety of processes, such as treating exhaust gases and converting methanol to olefins are described.

A barium titanate fiber is useful as a filler for a polymer composite piezoelectric body, a polymer composite piezoelectric body has high piezoelectric properties, and a piezoelectric element utilizes the polymer composite piezoelectric body. In the barium titanate fiber, the molar ratio of barium atoms to titanium atoms (Ba/Ti ratio) falls within the range of 1.01 to 1.04. The polymer composite piezoelectric body includes a resin composition containing the barium titanate fiber and a polymer. The piezoelectric element including an electrically conductive layer on one surface or both surfaces of the polymer composite piezoelectric body.

This invention relates to a process for treating acid mine drainage (AMD). The process includes the steps of adjusting the pH of the AMD to be in the range of 3 to 5; adding maghemite nanoparticles to form a slurry; and a) aerating the slurry obtained in step 3), or b) simultaneously heating and mixing the slurry obtained in step 3). Thereafter maghemite nanoparticles loaded with one or more metals and sulphate and precipitated metals is separated from the slurry.

Provided are a barium titanate powder having spherical shape fine particles which have an average particle diameter (D.sub.50) in a range of about 140-270 nm, a tetragonal structure having a markedly improved tetragonality (c/a) in a range of 1.007-1.01 in contrast to the conventional composition, and at the same time, a markedly improved crystallinity in a range of 93-96%, thereby showing improved dielectric properties, and a manufacturing method thereof.

A method of preparing a lithium-ion conducting garnet via low-temperature solid-state synthesis is disclosed. The lithium-ion conducting garnet comprises a substantially phase pure aluminum-doped cubic lithium lanthanum zirconate (Li.sub.7La.sub.3Zr.sub.2O.sub.14). The method includes preparing nanoparticles comprising lanthanum zirconate (La.sub.2Zr.sub.2O.sub.7-np) via pyrolysis-mediated reaction of lanthanum nitrate (La(NO.sub.3).sub.3) and zirconium nitrate (Zr(NO.sub.3).sub.4). The method also includes pyrolyzing a solid-state mixture comprising the La.sub.2Zr.sub.2O.sub.7-np, lithium nitrate (LiNO.sub.3), and aluminum nitrate (Al(NO.sub.3).sub.3) to give the Li.sub.7La.sub.3Zr.sub.2O.sub.14 and thereby prepare the lithium-ion conducting garnet. A lithium-ion conducting garnet prepared via the method is also disclosed.

A light emitting diode (LED) assembly includes an LED light source having a first light output with a characteristic spectrum and at least one phosphor through which the first light output passes. The phosphor includes the quaternary compound M-Li—Al—O, where M is Ba, Sr, or Ca, activated by Eu.sup.2+ or Ce.sup.3+.

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO.sub.3, wherein at least one of A and B in ABO.sub.3 is substituted and doped with another atom having a larger atom radius, and ABO.sub.3 becomes A.sub.1-xA′.sub.xB.sub.1-yB′.sub.yO.sub.3 (where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.