C01P2002/77

Filler for resinous composition, filler-containing slurry composition and filler-containing resinous composition

A filler for resinous composition is contained and used in resinous composition, and includes: a crystalline siliceous particulate material with a crystal structure made of at least one member selected from the group consisting of type FAU, type FER, type LTA and type MFI, and/or type MWW; and a surface treatment agent including an organic silica compound reacted with or adhered to a surface of the crystalline siliceous particulate material; the filler including the surface treatment agent in an amount falling in a range allowing the filler to exhibit a negative thermal expansion coefficient.

Dumbbell-shaped calcium hydroxide nanoparticles, an enhanced fuel comprising the nanoparticles, and a method for making

Nanoparticles of calcium hydroxide having a dumbbell shape, wherein the dumbbell shape has rounded ends separated by a narrow central portion, wherein a ratio of a largest width of the central portion to a largest width of the rounded ends is 0.30 to 0.75, a length is in the range of 500 nm to 1100 nm, the largest width of the narrow central portion is 100 to 250 nm, and the largest width of the narrow central portion is 100 to 250 nm. The nanoparticles have a mesoporous structure and are made up of subparticles that have a size of 5 to 75 nm. A method of making the nanoparticles from calcined calcium carbonate sources is disclosed. Also disclosed is an enhanced fuel containing the nanoparticles.

Solid electrolyte material and battery

A solid electrolyte material includes a first crystal phase. The first crystal phase has a composition that is deficient in Li as compared with a composition represented by the following composition formula (1).
Li.sub.3Y.sub.1Cl.sub.6  formula (1)

BILAYER CERAMIC INTERCONNECT
20230033147 · 2023-02-02 · ·

Described herein are new solid oxide fuel cell interconnects and methods for making same that may comprise a novel bilayer construct on an anode substrate to provide a dense microstructure, low area specific resistance, and negligible oxygen permeability to form a bilayer ceramic interconnect that is a strong candidate for next-generation, durable, and low-cost tubular solid oxide fuel cells.

Molecular Sieve Intergrowths of cha and aft having an "sfw-GME tail," Methods of Preparation and Use
20230087077 · 2023-03-23 ·

Molecular sieves comprising intergrowths of cha and aft having an “sfw-GME tail”, at least one structure directing agent (SDA) within the framework of the molecular sieve, an intergrowth of CHA and GME framework structures, cha cavities, and aft cavities are described. A first SDA comprising either an N,N-dimethyl-3,5-dimethylpiperidinium cation or a N,N-diethyl-2,6-dimethylpiperidinium cation is required. A second SDA, which can further be present, is a CHA or an SFW generating cation. The amount of the second SDA-2 used can change the proportion of the components in the cha-aft-“sfw-GME tail”. Activated molecular sieves formed from SDA containing molecular sieves are also described. Compositions for preparing these molecular sieves are described. Methods of preparing a SDA containing JMZ-11, an activated JMZ-11, and metal containing activated JMZ-11 are described. Methods of using activated JMZ-11 and metal containing activated JMZ-11 in a variety of processes, such as treating exhaust gases and converting methanol to olefins are described.

CERIUM-ZIRCONIUM OXIDE-BASED OXYGEN ION CONDUCTOR (CZOIC) MATERIALS WITH HIGH OXYGEN MOBILITY
20230090959 · 2023-03-23 ·

A cerium-zirconium oxide-based ionic conductor (CZOIC) material including zirconium oxide in an amount ranging from 5 wt. % up to 95 wt. %, cerium oxide in an amount ranging from 95 wt. % to 5 wt. %, and at least one oxide or a rare earth metal in an amount ranging from 30 wt. % or less, based on the overall mass of the CZOIC material. The CZOIC material exhibits a structure comprising one or more expanded unit cells and a plurality of crystallites having ordered nano-domains. The structure of the CZOIC material exhibits a crystal lattice defined by a d-value measured at multiple (hkl) locations using a SAED technique that exhibit distortions, such that the d-values for the same (hkl) location varies from about 2% to about 5% from the d-value measured for a reference cerium-zirconium material at the same (hkl) location.

ACTIVE MATERIAL, ANODE LAYER, BATTERY, AND METHODS FOR PRODUCING THESE

A main object of the present disclosure is to provide an active material wherein a volume variation due to charge/discharge is small. The present disclosure achieves the object by providing an active material comprising a silicon clathrate II type crystal phase, including a void inside a primary particle, and a void amount A of the void with a fine pore diameter of 100 nm or less is more than 0.15 cc/g and 0.40 cc/g or less.

COMPOSITE OXIDE POWDER, METHOD FOR PRODUCING COMPOSITE OXIDE POWDER, METHOD FOR PRODUCING SOLID ELECTROLYTE OBJECT, AND METHOD FOR PRODUCING LITHIUM ION SECONDARY BATTERY

Provided are a composite oxide powder from which dense solid electrolyte objects having a high ion conductivity can be produced and a method for producing the composite oxide powder. The composite oxide powder is composed of particles comprising lithium (Li), lanthanum (La), zirconium (Zr), and oxygen (O) and having a cubic garnet-type crystal structure, and has a volume particle size distribution in which the 50% diameter (D50) is 1,000 nm or smaller, the composite oxide powder having a pyrochlore phase content of 10 mass % or less.

Quantum processing system

A quantum processing system is disclosed. In one embodiment, a quantum processing system comprises: a plurality of donor atoms positioned in a silicon crystal substrate, each donor atom positioned at a donor site; and a plurality of conductive control electrodes arranged about the donor atoms to operate the donor atoms as qubits. Where, at least two pairs of nearest neighbour donor atoms of the plurality of donor atoms are arranged along the [110] direction of the silicon crystal substrate and are configured to operate as qubits.

Single crystalline RbUO.SUB.3 .and method of making and using same

The present invention relates to single crystalline RbUO.sub.3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO.sub.3 single crystalline RbUO.sub.3 in the Pm-3m space group. Unlike other powdered RbUO.sub.3, Applicants' single crystalline RbUO.sub.3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.