The present disclosure relates to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, and specifically, to plasma-resistant glass, an inner chamber component for a semiconductor manufacturing process, and methods for manufacturing the glass and the component, wherein the contents of plasma-resistant glass components in the plasma-resistant glass are adjusted to achieve a lower melting temperature, the thermal expansion coefficient of the plasma-resistant glass is reduced to prevent damage from thermal shock during high-temperature use, and the plasma-resistant glass has improved light transmittance and durability, as well as an appropriate dielectric constant.