Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

The present invention relates to a tellurium-oxide-based glass composition for forming a glass-to-metal seal to alloys or metals having a coefficient of thermal expansion higher than 16 ppm/ C., said composition comprising TeO.sub.2, ZnO, TiO.sub.2 and optionally K.sub.2O and being essentially free of lead oxide, sodium oxide and vanadium oxide.

In addition it relates to the use of the glass composition according to the invention to form a glass-to-metal seal between copper or a copper alloy and an alloy or a metal having a coefficient of thermal expansion higher than 16 ppm/ C., in particular aluminum alloys.

It furthermore relates to a connector comprising a contact made of copper or of copper alloy, an insert and/or shell made of a metal or alloy having a coefficient of thermal expansion higher than 16 ppm/ C. and, by way of glass-to-metal sealant between the contact and the insert and/or shell, a tellurium-oxide-based glass having the composition according to the invention.

Lastly, it relates to a process for forming a glass-to-metal seal between a contact made of copper or of copper alloy and an insert and/or shell made of metal or alloy having a coefficient of thermal expansion higher than 16 ppm/ C.

Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

An optical glass includes La.sup.3+, Zn.sup.2+, Nb.sup.5+, and Ti.sup.4+ as a cation configuring glass. La.sup.3+, Zn.sup.2+, Nb.sup.5+, and Ti.sup.4+ which satisfy 10 cat %La.sup.3+20 cat %, 10 cat %Zn.sup.2+60 cat %, 20 cat %Nb.sup.5+60 cat %, and 0 cat %Ti.sup.4+40 cat % expressed by cation %.

Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

A lithium-ion conductive glass-ceramic article has a crystalline component characterized by the formula MA.sub.2(XO.sub.4).sub.3, where M represents one or more monovalent or divalent cations selected from Li, Na and Zn, A represents one or more trivalent, tetravalent or pentavalent cations selected from Al, Cr, Fe, Ga, Si, Ti, Ge, V and Nb, and X represents P cations which may be partially substituted by B cations.

The present invention relates to a hydrothermal method for preparing a doped vanadium dioxide powder, the doped powder having a chemical composition of V.sub.1-XM.sub.XO.sub.2, 0<X0.5, and M is a doping element, which is introduced to control a particle size and a morphology of the doped powder, the doping element M is selected from a group consisting of manganese, iron, cobalt, nickel, copper, zinc, tin, indium, antimony, gallium, germanium, lead and bismuth, the method comprising a step of a precursor treatment of titrating a quadrivalent vanadium aqueous solution with a basic reagent to obtain a precursor suspension, wherein the precursor treatment involves titrating the quadrivalent vanadium aqueous solution until the emergence of the precursor suspension. The preparation methods for the present invention are easy to implement, low in cost, provide high yield, and are suitable for large scale production.

According to examples of the present disclosure, a glass product is disclosed that includes a composition of which comprises at least 50 molar percent titanium dioxide and at least 0.1 molar percent rare earth metal oxide wherein the rare earth is at least one of the following elements: scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium.

Embodiments of the invention include a semiconductor light emitting device including a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A wavelength converting structure is disposed in a path of light emitted by the light emitting layer. A diffuse reflector is disposed along a sidewall of the semiconductor light emitting device and the wavelength converting structure. The diffuse reflector includes a pigment. A reflective layer is disposed between the diffuse reflector and the semiconductor structure. The reflective layer is a different material from the diffuse reflector.

The present disclosure provides a retroreflective glass bead that includes at least one high refractive oxide selected from the group consisting of TiO.sub.2, BaO, La.sub.2O and Bi.sub.2O.sub.3; and at least one additive selected from the group consisting of MgO, CaO, ZnO, ZrO.sub.2, Al.sub.2O.sub.3, K.sub.2O, Na.sub.2O, Li.sub.2O and SrO. The glass bead according to the present invention have excellent retroreflectivity according to optical properties and excellent durability and productivity due to a simple structure, and also can be produced in various colors due to high chemical stability. Thus, the retroreflective aggregate including the glass bead according to the present invention exhibits very high visibility under various circumstances such as rainy or dry conditions. In addition, the method of producing a glass bead according to the present invention can reduce manufacturing costs while ensuring excellent productivity.