The present disclosure provides a wavelength conversion glass, a method for manufacturing the wavelength conversion glass, and a light emitting device including the wavelength conversion glass. The wavelength conversion glass includes a TeO.sub.2B.sub.2O.sub.3ZnOBaO-based transparent glass containing tellurium dioxide (TeO.sub.2), boric oxide (B.sub.2O.sub.3), zinc oxide (ZnO), and barium oxide (BaO); and phosphor micro-particles dispersed in the transparent glass.

The present disclosure provides a wavelength conversion glass, a method for manufacturing the wavelength conversion glass, and a light emitting device including the wavelength conversion glass. The wavelength conversion glass includes a TeO.sub.2B.sub.2O.sub.3ZnOBaO-based transparent glass containing tellurium dioxide (TeO.sub.2), boric oxide (B.sub.2O.sub.3), zinc oxide (ZnO), and barium oxide (BaO); and phosphor micro-particles dispersed in the transparent glass.

An apparatus including a first substrate, a second substrate, an inorganic film provided between the first substrate and the second substrate and in contact with both the first substrate and the second substrate, a laser welded zone formed between the first and second substrate by the inorganic film, where the laser welded zone has a heat affected zone (HAZ), where the HAZ is defined as a region in which .sub.HAZ is at least 1 MPa higher than average stress in the first substrate and the second substrate, wherein .sub.HAZ is compressive stress in the HAZ, and wherein the laser welded zone is characterized by its .sub.interface laser weld>.sub.HAZ, wherein .sub.interface laser weld is peak value of compressive stress in the laser welded zone.

An apparatus including a first substrate, a second substrate, an inorganic film provided between the first substrate and the second substrate and in contact with both the first substrate and the second substrate, a laser welded zone formed between the first and second substrate by the inorganic film, where the laser welded zone has a heat affected zone (HAZ), where the HAZ is defined as a region in which .sub.HAZ is at least 1 MPa higher than average stress in the first substrate and the second substrate, wherein .sub.HAZ is compressive stress in the HAZ, and wherein the laser welded zone is characterized by its .sub.interface laser weld>.sub.HAZ, wherein .sub.interface laser weld is peak value of compressive stress in the laser welded zone.

Provided are an optical glass that has optical properties including a medium refractive index and low dispersion and that has good chemical durability and a low specific gravity, and a preform material and an optical element that use the optical glass.

The optical glass contains a SiO.sub.2 component: 0% or more and less than 30.0%; 8.0% to 30.0% of an Al.sub.2O.sub.3 component; less than 20.0% of an RO component (where R represents at least one selected from the group consisting of Zn, Mg, Ca, Sr, and Ba) in terms of a mass sum; and 10.0% to 55.0% of an Ln.sub.2O.sub.3 component (where Ln represents at least one selected from the group consisting of La, Gd, Y, and Lu) in terms of a mass sum.

A mass ratio (SiO.sub.2+Al.sub.2O.sub.3)/B.sub.2O.sub.3 is 0.3 to 10.0, and the optical glass has a refractive index (n.sub.d) of 1.58 or more and 1.80 or less and an Abbe number (.sub.d) of 35 or more and 65 or less.

The present invention pertains to a glass characterized by: containing 72-82% of Li.sup.+, 0-21% of Si.sup.4+, and 0-28% of B.sup.3+ in terms of cation %; and containing at least 70% and less than 100% of O.sup.2 and more than 0% and at most 30% of Cl.sup., containing at least 94% and less than 100% of O.sup.2 and more than 0% and at most 6% of S.sup.2, or containing at least 64% and less than 100% of O.sup.2, more than 0% and at most 30% of Cl.sup., and more than 0% and at most 6% of S.sup.2, in terms of anion %.

The present invention pertains to a glass characterized by: containing 72-82% of Li.sup.+, 0-21% of Si.sup.4+, and 0-28% of B.sup.3+ in terms of cation %; and containing at least 70% and less than 100% of O.sup.2 and more than 0% and at most 30% of Cl.sup., containing at least 94% and less than 100% of O.sup.2 and more than 0% and at most 6% of S.sup.2, or containing at least 64% and less than 100% of O.sup.2, more than 0% and at most 30% of Cl.sup., and more than 0% and at most 6% of S.sup.2, in terms of anion %.

A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm.

A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm.

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.