Colored CTE modifiers may be added to a glass frit system to modify the CTE of a resulting fired enamel. The CTE modifier is colored. The colored CTE modifier may include a modified Pseudo-Brookite type material having a formula Al.sub.2TiO.sub.5, where Al and/or Ti are partially substituted with one or more coloring ions including Fe, Cr, Mn, Co, Ni, and Cu; a modified Cordierite type material having a formula Mg.sub.2Al.sub.4Si.sub.5O.sub.18, wherein Mg and/or Al is partially substituted with one or more of the coloring ions; a Perovskite type material having a formula Sm.sub.1−xSr.sub.xMnO.sub.3−δ, where x=0.0-0.5 and δ=0.0-0.25, or a modified version of the Perovskite type material wherein Sr is partially substituted with Ba and/or Ca; a modified magnesium pyrophosphate type material having a formula Mg.sub.2P.sub.2O.sub.7 wherein Mg is substituted with Co and/or Zn ions; or combinations thereof.

A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

A solar cell is disclosed. The solar cell includes a first conductive region positioned at a front surface of a semiconductor substrate and containing impurities of a first conductivity type or a second conductivity type, a second conductive region positioned at a back surface of the semiconductor substrate and containing impurities of a conductivity type opposite a conductivity type of impurities of the first conductive region, a first electrode positioned on the front surface of the semiconductor substrate and connected to the first conductive region, and a second electrode positioned on the back surface of the semiconductor substrate and connected to the second conductive region. Each of the first and second electrodes includes metal particles and a glass frit.

The present disclosure discloses a ceramic glass powder and a solar cell metallization paste containing the ceramic glass powder, and belongs to the technical field of solar cells. The present disclosure provides a novel formula mode of a glass powder including a crystallization nucleus component and a glass network component, that is, a formula of a ceramic glass powder that has a special crystallization behavior, a low crystallinity before sintering and a high crystallinity after the sintering, and a conductive metallization paste containing the ceramic glass powder is further obtained. The present disclosure solves the technical problem that by using metallization pastes in the prior art, a balance between corrosion of a silicon wafer and an ohmic contact is difficult to achieve. The efficiency of a solar cell is improved.

The present disclosure discloses a ceramic glass powder and a solar cell metallization paste containing the ceramic glass powder, and belongs to the technical field of solar cells. The present disclosure provides a novel formula mode of a glass powder including a crystallization nucleus component and a glass network component, that is, a formula of a ceramic glass powder that has a special crystallization behavior, a low crystallinity before sintering and a high crystallinity after the sintering, and a conductive metallization paste containing the ceramic glass powder is further obtained. The present disclosure solves the technical problem that by using metallization pastes in the prior art, a balance between corrosion of a silicon wafer and an ohmic contact is difficult to achieve. The efficiency of a solar cell is improved.

The present disclosure discloses a low LOI tellurium-lithium-silicon-zirconium frit system and a conductive paste and application thereof, and belongs to the field of conductive paste. In the low LOI tellurium-lithium-silicon-zirconium frit system, components of the frit are 24%-40% TeO.sub.2, 18%-24% Li.sub.2O, 4%-13% SiO.sub.2, 0-2% ZrO.sub.2, and a balance MO.sub.x, and M is one or a mixture of Na, K, Mg, Ca, Sr, Ti, V, Cr, Mo, W, Mn, Cu, Ag, Zn, Cd, B, Al, Ga, Tl, Ge, Pb, P, and Bi. There is no need to add additional surfactants, a viscosity change of the conductive paste prepared after standing for 30 days is less than 20%, the conductive paste has good stability, the water related weight loss of inorganic oxide of the conductive paste is less than 1.6%, and the application performance of the conductive paste is not affected after standing for 30 days.

To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises an organic vehicle and a conductive substance-containing glass powder comprising ruthenium oxide and lead ruthenate, the conductive substance-containing glass powder comprises 10 to 70 mass% of conductive substances, a glass composition of the conductive substance-containing glass powder comprises 3 to 30 mass% of silicon oxide, 30 to 90 mass% of lead oxide, 5 to 50 mass% of boron oxide relative to 100 mass% of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass% is 50 mass% or more relative to 100 mass% of the glass components.

To provide a thick film resistor paste for a resistor having a smaller resistance change rate and excellent surge resistance, a thick film resistor using the thick film resistor paste, and an electronic component provided with the thick film resistor. A thick film resistor paste comprises an organic vehicle and a conductive substance-containing glass powder comprising ruthenium oxide and lead ruthenate, the conductive substance-containing glass powder comprises 10 to 70 mass% of conductive substances, a glass composition of the conductive substance-containing glass powder comprises 3 to 30 mass% of silicon oxide, 30 to 90 mass% of lead oxide, 5 to 50 mass% of boron oxide relative to 100 mass% of glass components, and, a combined amount of silicon oxide, lead oxide and boron oxide by mass% is 50 mass% or more relative to 100 mass% of the glass components.

The present invention relates to a glass powder and a silver-aluminum paste for use on a front of an N-type double-sided solar cell comprising a conductive silver powder, a silicon-aluminum alloy powder, the glass powder and an organic vehicle. The glass powder comprises the following components by weight: 0-50% of PbO, 0-50% of BiO, 5-15% of B.sub.2O.sub.3, 8-9% of SiO.sub.2, 2-3% of Al.sub.2O.sub.3 and 5-15% of ZnO; silicon and aluminum in the glass powder have a mass ratio of 4:1-5:1; the conductive silver powder has a content of 80-90 wt %; the conductive silver powder comprises a nano-silver powder and a silver alloy powder, and the nano-silver powder to the silver alloy powder have a mass ratio of 1:18-1:90.

The present disclosure discloses a lithium and tellurium-silicate binary glass-oxide-complex system and a conductive paste containing the complex system, and belongs to the technical field of solar cells. The present disclosure uses a “functional modularity” strategy in the formula design of a glass-oxide-complex system (GOC). Alkali metal ions with high migration and reactivity are separated from a glass body with high fluidity, thus a binary complex system is constructed, that is, a lithium-containing glass-oxide-complex (Li-GOC) with high activity and a tellurium-silica-containing glass-oxide-complex (Si—Te-GOC) with high fluidity. Through the modularized formula strategy, active ingredients can be better controlled, so as to obtain more balanced contact and open circuit voltage and improve the photoelectric conversion efficiency of a solar cell.