A glass filler of the present disclosure includes glass having a composition, the composition including iron oxide. For the content in mass % of the iron oxide in the composition, 0.005≤FeO≤0.30 and 0.01≤T-Fe.sub.2O.sub.3≤0.80 (T-Fe.sub.2O.sub.3 represents total iron oxide calculated as Fe.sub.2O.sub.3) are satisfied. For the iron oxide in the composition, Fe.sup.2+/(Fe.sup.2++Fe.sup.3+), which represents the proportion by mass of Fe.sup.2+ to total iron, is 0.15 or more and 1.00 or less. The glass filler of the present disclosure is a glass filler having a new composition including a coloring component, the glass filler having a high visible transmittance and a controlled color which can be, for example, within a range of colors different from those of conventional glass fillers that have a low visible transmittance.

A glass filler of the present disclosure includes glass having a composition, the composition including iron oxide. For the content in mass % of the iron oxide in the composition, 0.005≤FeO≤0.30 and 0.01≤T-Fe.sub.2O.sub.3≤0.80 (T-Fe.sub.2O.sub.3 represents total iron oxide calculated as Fe.sub.2O.sub.3) are satisfied. For the iron oxide in the composition, Fe.sup.2+/(Fe.sup.2++Fe.sup.3+), which represents the proportion by mass of Fe.sup.2+ to total iron, is 0.15 or more and 1.00 or less. The glass filler of the present disclosure is a glass filler having a new composition including a coloring component, the glass filler having a high visible transmittance and a controlled color which can be, for example, within a range of colors different from those of conventional glass fillers that have a low visible transmittance.

A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

The present invention includes a method for creating a system-in-package in or on photodefinable glass including: providing a photodefinable glass substrate; masking a design layout comprising one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefinable glass substrate; transforming at least a portion of the photodefinable glass substrate to form a glass-crystalline substrate; etching the glass-crystalline substrate to form one or more channels in the glass-crystalline substrate; depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate to enable electroplating of copper; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices.

The present invention includes a method for creating a system-in-package in or on photodefinable glass including: providing a photodefinable glass substrate; masking a design layout comprising one or more structures to form one or more integrated lumped element devices as the system-in-package on or in a photodefinable glass substrate; transforming at least a portion of the photodefinable glass substrate to form a glass-crystalline substrate; etching the glass-crystalline substrate to form one or more channels in the glass-crystalline substrate; depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate to enable electroplating of copper; and electroplating the copper to fill the one or more channels and to deposit copper on the surface of the photodefinable glass to form the one or more integrated lumped element devices.

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

The present invention includes a method for creating a system in a package with integrated lumped element devices is system-in-package (SiP) or in photo-definable glass, comprising: masking a design layout comprising one or more electrical components on or in a photosensitive glass substrate; activating the photosensitive glass substrate, heating and cooling to make the crystalline material to form a glass-crystalline substrate; etching the glass-crystalline substrate; and depositing, growing, or selectively etching a seed layer on a surface of the glass-crystalline substrate on the surface of the photodefinable glass, wherein the integrated lumped element devices reduces the parasitic noise and losses by at least 25% from a package lumped element device mount to a system-in-package (SiP) in or on photo-definable glass when compared to an equivalent surface mounted device.

A shielding mesh to counter scattered ionizing radiation is provided. The shielding mesh includes a plate, arrangement of depressions, a mesh of trenches, and an x-ray-absorbing material. The plate has a first side and a second side opposite the first side. The arrangement of depressions are in the plate and are open toward the second side. The mesh of trenches are in the plate and are open toward the first side. The x-ray-absorbing material is in the mesh of trenches. The mesh of trenches and arrangement of depressions are configured so that a wall of the plate remains between the arrangement of depressions and the mesh of trenches.

A shielding mesh to counter scattered ionizing radiation is provided. The shielding mesh includes a plate, arrangement of depressions, a mesh of trenches, and an x-ray-absorbing material. The plate has a first side and a second side opposite the first side. The arrangement of depressions are in the plate and are open toward the second side. The mesh of trenches are in the plate and are open toward the first side. The x-ray-absorbing material is in the mesh of trenches. The mesh of trenches and arrangement of depressions are configured so that a wall of the plate remains between the arrangement of depressions and the mesh of trenches.