C03C25/68

Deposition mask production method and laser processing apparatus
09802221 · 2017-10-31 · ·

A method including: a first step of forming a mask member having a structure in which a magnetic metal member provided with through-holes is in tight contact with one surface of a film; a second step of forming a plurality of preliminary opening patterns by subjecting the film to penetration processing by irradiating laser beams at predetermined regular positions in the plurality of through-holes; and a third step of performing laser processing so as to form each opening pattern over the corresponding preliminary opening pattern, is provided.

CMP composition for silicon nitride removal

The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm.sup.2 to about 8 hydroxyls per nm.sup.2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

OPTICAL FIBER

One of embodiments relates to an optical fiber in which an alkali metal element is efficiently doped to its core to suppress transmission loss from increasing. A mean concentration or a concentration distribution of the alkali metal element is adjusted such that 0.48 or less is obtained as an weighted value obtained by weighting a distribution of field intensity of guided light at a wavelength of 1550 nm, with respect to a radial direction distribution of a ratio I.sub.D2/I.sub.ω3 of an intensity I.sub.D2 of Raman scattering light by a silica three-membered ring structure and an intensity I.sub.ω3 of Raman scattering light by a Si—O stretching vibration, in a cross-sectional region having a diameter of 20 μm.

OPTICAL FIBER

One of embodiments relates to an optical fiber in which an alkali metal element is efficiently doped to its core to suppress transmission loss from increasing. A mean concentration or a concentration distribution of the alkali metal element is adjusted such that 0.48 or less is obtained as an weighted value obtained by weighting a distribution of field intensity of guided light at a wavelength of 1550 nm, with respect to a radial direction distribution of a ratio I.sub.D2/I.sub.ω3 of an intensity I.sub.D2 of Raman scattering light by a silica three-membered ring structure and an intensity I.sub.ω3 of Raman scattering light by a Si—O stretching vibration, in a cross-sectional region having a diameter of 20 μm.

CMP polishing solution and polishing method

The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.

Substrate processing method and control apparatus

Provided is a substrate processing method of filling a recess of a predetermined uneven pattern formed on a substrate with a film forming material by performing a first film forming processing, a first etching processing and a second film forming processing on the substrate, using a vertical substrate processing apparatus and a control apparatus controlling operations of the vertical substrate processing apparatus. The method includes calculating a first film forming condition, a first etching condition, and a second film forming condition by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming processing; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition.

Manufacturing method of mask plate for shielding during sealant-curing

A manufacturing method of a mask plate for shielding during sealant-curing includes: forming a negative photoresist light-shielding material layer on a transparent substrate; with a color-filter mask plate set, exposing the substrate formed with the negative photoresist light-shielding material layer; developing the substrate after exposing to form the pattern of the mask plate. The method does not require separate fabrication of a mask plate, thereby significantly reducing the manufacturing costs of the mask plate for shielding during sealant-curing.

Plasma etching method
09793136 · 2017-10-17 · ·

A plasma etching method can form a hole having a required opening diameter in a silicon nitride layer, while suppressing a tip end portion of the hole from being narrowed. The plasma etching method includes a first process of supplying a processing gas containing oxygen and fluorocarbon into a plasma processing apparatus; and a second process of etching a silicon nitride layer 106a of a processing target object with a first mask 106 by exciting the processing gas into plasma. Further, the second process is performed in a state where an organic film ad generated from the processing gas is formed on an inner wall of an opening of the first mask 106 by gradually reducing a temperature of the processing target object from a first temperature T1 (80° C.) to a second temperature T2 (40° C.).

Method for manufacturing optical fiber parent material, and method for manufacturing optical fiber

A method for manufacturing an optical fiber preform including a core part and a cladding part is disclosed. The method includes: adding an alkali metal to an inner surface of a silica-based glass pipe; etching the inner surface of the silica-based glass pipe to which the alkali metal is added; making a glass rod by collapsing the silica-based glass pipe after the etching; and making an optical fiber preform using the glass rod. The silica-based glass pipe is heated in the adding such that a surface temperature of the silica-based glass pipe falls within a temperature range of 1500° C. or higher to lower than 2000° C.

Method for manufacturing optical fiber parent material, and method for manufacturing optical fiber

A method for manufacturing an optical fiber preform including a core part and a cladding part is disclosed. The method includes: adding an alkali metal to an inner surface of a silica-based glass pipe; etching the inner surface of the silica-based glass pipe to which the alkali metal is added; making a glass rod by collapsing the silica-based glass pipe after the etching; and making an optical fiber preform using the glass rod. The silica-based glass pipe is heated in the adding such that a surface temperature of the silica-based glass pipe falls within a temperature range of 1500° C. or higher to lower than 2000° C.