The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKa.sub.min)<pKa<18 (pKa.sub.max)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pH.sub.slurry) by the following equation: pKa.sub.min+6<pH.sub.slurry<pKa.sub.max−6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.

A system and method for creating an anti-reflective surface structure on an optical device includes a shim including a textured pattern, wherein the ship is configured to stamp the optical device with the textured pattern, a connector configured to place the optical device in proximity to the shim and apply a force to the optical device against the shim, and a laser source configured to heat the optical device by generating and applying a laser beam to the optical device when the optical device is placed in proximity to the shim.

An exemplary embodiment provides a method which etches a second layer in a base body to be processed having a first layer containing Ni and Si and a second layer containing Si and N which are exposed to a surface thereof. The method according to the exemplary embodiment includes (a) preparing a base body to be processed in a processing chamber, and (b) supplying a first processing gas which contains carbon and fluorine but does not contain oxygen into the processing chamber and generating plasma in the processing chamber.

In one embodiment of the present invention, an etching method for a substrate to be processed comprises: (a1) a step in which etchant gas is supplied into a processing container than accommodates a substrate to be processed; (b1) a step in which the inside of the processing container is evacuated; (c1) a step in which a noble gas is supplied into the processing container; and (d1) a step in which microwaves are supplied into the processing container so as to excite the plasma of the noble gas inside the processing container. The sequential process including the step of supplying the etchant of supplying the etchant gas, the evacuating step, the step of supplying the noble gas, and the step of exciting the plasma of the noble gas may be repeated.

A method for processing carbon nanotubes includes positioning in a treatment chamber of a carbon nanotube processing apparatus a substrate having multiple carbon nanotubes bundled together and oriented substantially perpendicular to a surface of the substrate, and introducing a microwave into the treatment chamber from a planar antenna having multiple microwave radiation holes such that plasma of an etching gas is generated and that the plasma etches the carbon nanotubes starting from one end of the carbon nanotubes bundled together.

Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

A method for fabricating a window member is provided. A transparent substrate including a transmitting region and a non-transmitting region may be prepared. A light curable adhesive layer may be disposed on the transparent substrate. A plurality of micro patterns may be disposed on the transparent substrate or the light curable adhesive layer in the non-transmitting region. The light curable adhesive layer may be cured by light irradiation. The light curable adhesive layer may include a transparent adhesive. A storage modulus of the transparent adhesive may be greater than or equal to about 10.sup.3 Pa and less than about 10.sup.6 Pa at room temperature before curing, and greater than or equal to about 10.sup.6 Pa at room temperature after curing.

A first etching rate of the first conductive film is calculated by acquiring correlation between an opening ratio of an etching mask and an etching rate of an etching target film, and then, performing a first dry etching to a first conductive film formed on a first wafer. Next, a second etching mask is formed on a second conductive film formed on a second wafer, and an etching time of the second conductive film is determined from the correlation between the opening ratio and the etching rate, the first etching rate, and a film thickness of the second conductive film when the second conductive film is subjected to a second dry etching in time-controlled etching.

Tapered core fibers are produced using tapered core rods that can be etched or ground so that a fiber cladding has a constant diameter. The tapered core can be an actively doped core, or a passive core. One or more sleeving tubes can be collapsed onto a tapered core rod and exterior portions of the collapsed sleeving tubes can be ground to provide a constant cladding diameter in a fiber drawn from the preform.

A method of manufacturing a structure includes (1) positioning a first resin layer provided on a first supporting member on a substrate having a through hole, with the first resin layer facing toward the substrate, and releasing the first supporting member from the first resin layer; and (2) positioning a second resin layer provided on a second supporting member on the first resin layer from which the first supporting member has been released, with the second resin layer facing toward the first resin layer, and releasing the second supporting member from the second resin layer. A first resin layer portion that is above the through hole is removed before or simultaneously with the releasing of the first supporting member.