A cesium tungsten oxide film has high heat ray shielding performance and a radio wave transmissivity, and a method for manufacturing a cesium tungsten oxide film capable of manufacturing such film by a dry method. A cesium tungsten oxide film including cesium, tungsten and oxygen as main components, wherein, an atomic ratio of the cesium and the tungsten is Cs/W, which is 0.1 or more and 0.5 or less, and the cesium tungsten oxide film is having a hexagonal crystal structure. A method for manufacturing a cesium tungsten oxide film including cesium, tungsten and oxygen as main components, including: a film deposition process using a cesium tungsten oxide target; and a heat treatment process for heat-treating the film at a temperature of 400 C. or more and less than 1000 C., wherein either the film deposition process or the heat treatment process is performed in an atmosphere containing oxygen.

Transparent conductive oxide thin films having a plurality of layers with voids located at each interface. Smooth TCO surfaces with no post growth processing and a largely tunable haze value. Methods of making include applying multiple layers of a conductive oxide onto a surface of a substrate, and interrupting the application between the multiple layers to form a plurality of voids at the interfaces.

The present invention is a method for producing a quartz glass crucible for pulling a single crystal silicon from a silicon melt held therein, including the steps of: producing a quartz glass crucible having an outer layer including an opaque quartz glass containing bubbles therein and an inner layer including a transparent quartz glass containing substantially no bubbles; roughening a region of an inner surface of the produced quartz glass crucible, the region being in contact with the silicon melt when holding the silicon melt; and heating the quartz glass crucible having the roughened inner surface to crystallize a surface of the roughened region. This can produce a quartz glass crucible for pulling a single crystal silicon which can suppress generation of a brown ring on the inner surface of the crucible during pulling the single crystal silicon and can suppress crystallinity disorder of the single crystal silicon.

Surface having properties for reducing diffuse light due to water condensation, wherein the antifog means consist in atomic aggregates adhered to and dispersed over the surface, wherein the aggregates are selected among the transition metals and the silicon. It is also related to a method for obtaining a surface having properties for reducing diffuse light due to water condensation a wavelength selected in the range from 100 nm to 50 micrometers, comprising the steps of selecting the wavelength, obtaining a glass or polymer surface that has been subjected to optical polishing and adhering to the surface atomic aggregates which are selected among the transition metals and the silicon with a separation between them being lower than or having an order of the selected wavelength selected. Thus a durable antifogging surface is obtained.

A fused quartz crucible for pulling a single crystal of silicon by the Czochralski technique, has an inner side with an inner layer of fused quartz that forms a surface, the inner layer being provided with a crystallization promoter which on heating of the fused quartz crucible during use, in crystal pulling, causes crystallization of fused quartz to form b-cristobalite, wherein the concentration C of synthetically obtained SiO.sub.2 at a distance d from the surface is greater than the concentration of synthetically obtained SiO.sub.2 at a distance d2 from the surface, where d2 is greater than d. Multiple crystals can be grown while maintaining high crystal quality.

A coating film-attached glass comprising a glass substrate, and a coating film provided on at least a part of a surface of the glass substrate, in which a region from the surface of the glass substrate on the coating film side to a predetermined depth is a modified layer, and the modified layer has a microcrystalline structure at least in part.

Techniques for drying and crystallizing a film of crystalline material, such as a perovskite, from a solution are disclosed.