A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a CuK X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3 to 2.0.

An alkaline-activated binder system for fire concretes includes at least one mineral binder and a mineral activator which, in a mixture with water, form a curing geopolymer, where a combination of at least two magnesium components (Mg components) which give an alkaline reaction with water and react with the binder at different times to form a geopolymer is present as activator, where the magnesium components have a different reactivity in respect of atmospheric moisture and/or in respect of the binder. A dry fire concrete mix contains the binder system and the mix may be used in, for example, facilities in the steel industry.

An alkaline-activated binder system for fire concretes includes at least one mineral binder and a mineral activator which, in a mixture with water, form a curing geopolymer, where a combination of at least two magnesium components (Mg components) which give an alkaline reaction with water and react with the binder at different times to form a geopolymer is present as activator, where the magnesium components have a different reactivity in respect of atmospheric moisture and/or in respect of the binder. A dry fire concrete mix contains the binder system and the mix may be used in, for example, facilities in the steel industry.

A method for treating refractory ceramic products is described herein. The method includes providing a refractory ceramic product, comprising magnesia and at least one of the following salts: one or more alkali salts and one or more alkaline earth salts. The method also includes providing a water-based liquid, combining the refractory ceramic product with the liquid, and separating the refractory ceramic product and the liquid.

A method for treating refractory ceramic products is described herein. The method includes providing a refractory ceramic product, comprising magnesia and at least one of the following salts: one or more alkali salts and one or more alkaline earth salts. The method also includes providing a water-based liquid, combining the refractory ceramic product with the liquid, and separating the refractory ceramic product and the liquid.

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.010.sup.18 cm.sup.3, and a carrier mobility of 10 cm.sup.2V.sup.1 sec.sup.1 or higher.

Provided are: a sintered oxide which achieves low carrier density and high carrier mobility when configured as an oxide semiconductor thin-film by using the sputtering method; and a sputtering target using the same. This sintered oxide contains indium, gallium and magnesium as oxides. It is preferable for the gallium content to be 0.20-0.45, inclusive, in terms of an atomic ratio (Ga/(In+Ga)), the magnesium content to be at least 0.0001 and less than 0.05 in terms of an atomic ratio (Mg/(In+Ga+Mg)), and the sintering to occur at 1,200-1,550 C., inclusive. An amorphous oxide semiconductor thin-film obtained by forming this sintered oxide as a sputtering target is capable of achieving a carrier density of less than 3.010.sup.18 cm.sup.3, and a carrier mobility of 10 cm.sup.2V.sup.1 sec.sup.1 or higher.

Provided is a method of forming a layered double hydroxide (LDH) dense membrane on the surface of a porous substrate. The LDH dense membrane is composed of an LDH represented by the formula: M.sup.2+.sub.1-xM.sup.3+.sub.x(OH).sub.2A.sup.n.sub.x/n.Math.mH.sub.2O where M.sup.2+ represents a divalent cation. M.sup.3+ represents a trivalent cation, A.sup.n represents an n-valent anion, n is an integer of 1 or more, and x is 0.1 to 0.4. This method includes (a) providing a porous substrate, (b) evenly depositing, on the porous substrate, a nucleation material capable of providing a nucleus from which the crystal growth of the LDH starts; and (c) hydrothermally treating the porous substrate in an aqueous stock solution containing a constituent element of the LDH to form the LDH dense membrane on the surface of the porous substrate. The method of the present invention can form a highly-densified LDH membrane evenly on the surface of a porous substrate.

Provided is a method of forming a layered double hydroxide (LDH) dense membrane on the surface of a porous substrate. The LDH dense membrane is composed of an LDH represented by the formula: M.sup.2+.sub.1-xM.sup.3+.sub.x(OH).sub.2A.sup.n.sub.x/n.Math.mH.sub.2O where M.sup.2+ represents a divalent cation. M.sup.3+ represents a trivalent cation, A.sup.n represents an n-valent anion, n is an integer of 1 or more, and x is 0.1 to 0.4. This method includes (a) providing a porous substrate, (b) evenly depositing, on the porous substrate, a nucleation material capable of providing a nucleus from which the crystal growth of the LDH starts; and (c) hydrothermally treating the porous substrate in an aqueous stock solution containing a constituent element of the LDH to form the LDH dense membrane on the surface of the porous substrate. The method of the present invention can form a highly-densified LDH membrane evenly on the surface of a porous substrate.

Provided is a layered-double-hydroxide-containing composite material including a porous substrate and a functional layer disposed on and/or in the porous substrate, the functional layer containing a layered double hydroxide represented by the formula M.sup.2+.sub.1xM.sup.3+.sub.x(OH).sub.2A.sup.n.sub.x/n.mH.sub.2O, where M.sup.2+ represents a divalent cation, M.sup.3+ represents a trivalent cation, A.sup.n represents an n-valent anion, n is an integer of 1 or more, and x is 0.1 to 0.4, and the functional layer further containing sulfur (S) at the interface between the functional layer and the porous substrate and in the vicinity of the interface. In the LDH-containing composite material of the present invention, the LDH-containing functional layer disposed on and/or in the porous substrate exhibits significantly improved conductivity.